Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.

Abstract: A reliable and inexpensive solar module is disclosed. The solar module comprises a thin-film type photovoltaic cell array formed on a glass superstrate, leaving a margin of an appropriate width along the periphery of the glass superstrate, and a resin layer coated on the photovoltaic cell array and the peripheral margin of the glass superstrate. The solar module further comprises a backcover adhered by the resin layer to cover the photovoltaic cell array and the peripheral margin of the glass superstrate. The resin layer is preferably made of a fluoropolymer derived from a compound containing a perfluoroalkylene and active hydrogen atoms.