Abstract: Embodiments of the present invention provide a magnetic slider of which terminals have a sufficiently large process margin for the laser condition in the SBB process. According to one embodiment, a magnetic slider comprises: a read element and a write element; plural wiring lines which are connected to the read element and the write element; a protective film which covers the read element, the write element and the plural-wiring lines; plural slider pads formed on the protective film; and plural studs which respectively connect the slider pads and the wiring lines and are covered by the protective film, wherein each of the slider pads comprises a chromium film, a nickel iron film and a gold film, the nickel iron film is formed between the chromium film and the gold film, and the chromium film is formed between the nickel iron film and one of the studs and is in contact with the protective film.

Abstract: Embodiments of the present invention provide a magnetic head inspection system having a simple configuration capable of inspecting magnetic heads. According to one embodiment, the magnetic head inspection system comprises an inspection module which is provided with a magnetic disk where servo data including track identifier information are recorded, a spindle motor, a carriage having a mount structure to which a head assembly containing a magnetic head is secured, a voice coil motor and a main circuit section. An inspection circuit section instructs the main circuit section to execute control so as to move the magnetic head to a specific track and perform a certain read write operation by the magnetic head in order to inspect the magnetic head.

Abstract: Embodiments of the invention provide an inexpensive magnetic head tester employing component parts of a production HDD and capable of exercising functions very close to those of a production HDD. In one embodiment, a magnetic head tester employs the VCM actuator and the control circuit of a production HDD and has a lightweight, simple HGA fixing mechanism mounted on an actuator arm. The HGA fixing mechanism fixes an HGA to the actuator arm by a method using a very light holding spring mounted on the arm, a method of mechanically clamping an HGA by using air pressure, or a method of fixing an HGA to the arm by elastically deforming a rubber clamping member by air pressure. Servo control is achieved by the actuator of a production VCM. An end part of the VCM actuator is stopped by a stopping mechanism and is held by a holding spring to prevent the runaway of the VCM actuator. Servo control is performed by balancing the driving force of the VCM and the resilience of the spring.

Abstract: A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.

Abstract: Embodiments of the present invention provide a magnetic head inspection system having a simple configuration capable of inspecting magnetic heads. According to one embodiment, the magnetic head inspection system comprises an inspection module which is provided with a magnetic disk where servo data including track identifier information are recorded, a spindle motor, a carriage having a mount structure to which a head assembly containing a magnetic head is secured, a voice coil motor and a main circuit section. An inspection circuit section instructs the main circuit section to execute control so as to move the magnetic head to a specific track and perform a certain read write operation by the magnetic head in order to inspect the magnetic head.

Abstract: A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.

Abstract: A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends in a first direction of the memory array and functions as a gate electrode of a selection transistor included in each memory cell. A second interconnect line extends in the first direction of the memory array. A third interconnect line extends in a second direction. The magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines.

Abstract: Embodiments of the present invention provide a magnetic slider of which terminals have a sufficiently large process margin for the laser condition in the SBB process. According to one embodiment, a magnetic slider comprises: a read element and a write element; plural wiring lines which are connected to the read element and the write element; a protective film which covers the read element, the write element and the plural-wiring lines; plural slider pads formed on the protective film; and plural studs which respectively connect the slider pads and the wiring lines and are covered by the protective film, wherein each of the slider pads comprises a chromium film, a nickel iron film and a gold film, the nickel iron film is formed between the chromium film and the gold film, and the chromium film is formed between the nickel iron film and one of the studs and is in contact with the protective film.

Abstract: Embodiments of the invention provide an inexpensive magnetic head tester employing component parts of a production HDD and capable of exercising functions very close to those of a production HDD. In one embodiment, a magnetic head tester employs the VCM actuator and the control circuit of a production HDD and has a lightweight, simple HGA fixing mechanism mounted on an actuator arm. The HGA fixing mechanism fixes an HGA to the actuator arm by a method using a very light holding spring mounted on the arm, a method of mechanically clamping an HGA by using air pressure, or a method of fixing an HGA to the arm by elastically deforming a rubber clamping member by air pressure. Servo control is achieved by the actuator of a production VCM. An end part of the VCM actuator is stopped by a stopping mechanism and is held by a holding spring to prevent the runaway of the VCM actuator. Servo control is performed by balancing the driving force of the VCM and the resilience of the spring.

Abstract: MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.

Abstract: A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends in a first direction of the memory array and functions as a gate electrode of a selection transistor included in each memory cell. A second interconnect line extends in the first direction of the memory array. A third interconnect line extends in a second direction.

Abstract: The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hx generated by write bit line current IB and word line magnetic fields Hy generated by write word line current Iw for magnetization are considered, and an asteroid curve ACout is defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized.

Abstract: MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.

Abstract: MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.

Abstract: A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for generating a stop signal for stopping a data write current supply to the bitline 32 and a write wordline 30 after data is written in an magnetic tunnel junction (MTJ) element 44. Further, when data to be written to the storage element is the same as the data already stored therein, no write current is supplied to the write wordline 30, thereby saving power.

Abstract: The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hx generated by write bit line current In and word line magnetic fields Hy generated by write word line current Iw for magnetization are considered, and an asteroid curve ACout is defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized.

Abstract: The register disclosed herein includes a register block and a data writing block having non-volatile storage elements which store data output therefrom. The disclosed register further includes a data restoring block for reading data from the non-volatile storage elements. In a disclosed embodiment, the non-volatile storage elements are magnetic tunnel junction (MTJ) elements.

Abstract: The register disclosed herein includes a register block and a data writing block having non-volatile storage elements which store data output therefrom. The disclosed register further includes a data restoring block for reading data from the non-volatile storage elements. In a disclosed embodiment, the non-volatile storage elements are magnetic tunnel junction (MTJ) elements.

Abstract: A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for generating a stop signal for stopping a data write current supply to the bitline 32 and a write wordline 30 after data is written in an magnetic tunnel junction (MTJ) element 44. Further, when data to be written to the storage element is the same as the data already stored therein, no write current is supplied to the write wordline 30, thereby saving power.

Abstract: MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.