Abstract: An environmental information measurement device includes: a power source unit; an environmental information detector; a timer; and a controller. The power source unit generates, from an electromagnetic wave received, a power source voltage to be supplied to a load. The load includes the environmental information detector, the timer, and the controller. The environmental information detector includes a detector including a circuit element having an impedance or an electrostatic capacitance that varies according to a physical amount detected under an environment at a measurement target point, and outputs a signal that varies according to a response characteristic of the detector. The timer measures a duration from the time when measurement is initiated to the time when a voltage of the signal becomes a predetermined detection voltage. The controller controls an operation of the environmental information detector.

Abstract: A processing method of gas containing water and nitrogen oxides, which comprises the steps of bringing the gas into contact with a water adsorbent to remove water contained in the gas, and then, bringing the gas into contact with a palladium catalyst to remove nitrogen oxides contained in the gas. A processing apparatus of gas containing water and nitrogen oxides, which comprises an inlet for the gas containing water and nitrogen oxides, a filling part for a water adsorbent, a filling part for a palladium catalyst and an outlet for the processed gas, wherein the filling part for a water adsorbent is deployed adjacent to the inlet, and the filling part for a palladium catalyst is deployed adjacent to the outlet.

Abstract: A dust removing apparatus equipped with a back washing mechanism and a dust removing method for removing solid silica fine powder contained in a gas discharged from a semiconductor producing step of a single-wafer processing atmospheric pressure CVD apparatus without causing problems caused by the increase of a pressure loss and by a pressure fluctuation, wherein filter elements each having a ratio of a surface area of a primary side of a filter membrane to an apparent external surface area of the filter element of from 1 to 5 is used, gas jetting nozzle(s) for back washing is formed in the secondary side of the filter element, back washing is not carried out during filtration in the filter element and at or after changing the processing of a wafer in the CVD apparatus, back washing is carried out to blow down the silica fine powder accumulated on the primary side of the filter membrane.

Abstract: A compound water-sealing sealant comprising a non-water-swelling thermoplastic resin (A), preferably a vinyl chloride resin, and a water-swelling resin (C) obtained by kneading together 10 to 97% by weight of the non-water-swelling thermoplastic resin (A) and 3 to 90% by weight of a water-swelling material (B). The compound water-sealing sealant is molded by the conjoint extrusion molding of the non-water-swelling thermoplastic resin (A) and the water-swelling resin (C). The water-swelling material (B) is a water-swelling urethane resin which is a prepolymer having isocyanate groups in which the content of terminal NCO groups amounts to 1 to 12%, preferably 2 to 7%, obtained by the reaction of polyisocyanate with at least one polyether polyol of the formulaR[(OR.sub.1)n OH]pwherein R is a polyhydric alcohol residue;(OR.sub.

Abstract: A water-sealing sheet comprising a water-swelling resin obtained by kneading together 10 to 97% by weight of a non-water-swelling thermoplastic resin, preferably vinyl chloride resin, containing 80 to 200 parts by weight of a plasticizer based on 100 parts by weight of the non-waterswelling thermoplastic resin, and 3 to 90% by weight of a water-swelling urethane resin. The urethane resin is a prepolymer having isocyanate groups in which the content of terminal NCO groups amounts to 1 to 12%, preferably 2 to 7%, obtained by the reaction of polyisocyanate with at least one polyether polyol of the formulaR[(OR.sub.1)n OH]pwherein R is a polyhydric alcohol residue;(OR.sub.

Abstract: A positive coefficient thin-film thermistor which is a thin film exhibiting a positive temperature coefficient (PTC) characteristic and having a thickness of 0.005 to 5 .mu.m and electrodes as constituting elements, and wherein the thin film is compound of a barium titanate based composition and the PTC characteristic is represented by a resistance variation in the transition of region of 1-10 orders of magnitude and a maximum resistance temperature variation rate of 1-20 orders/.degree.C.

Abstract: This invention relates to an injection type thin film luminescence element having a high luminance and a high stability characterized in having two electrode layers at least one of which is transparent or translucent and having between these two electrode layers a luminescence function-manifesting layer comprising a laminated layer of a p-type or n-type inorganic semiconductor thin film layer and an organic compound thin film layer.