Abstract: A radiation imaging apparatus comprises a sensor portion including a pixel array configured to acquire an image signal corresponding to radiation, and a plurality of detection elements arranged in the pixel array and configured to detect the radiation, and a readout circuit configured to read out the image signal from the sensor portion, wherein the readout circuit includes a signal processing circuit arranged to combine and process signals from the plurality of detection elements if determining the presence or absence of radiation irradiation, and to process a signal for each detection element or combine and process signals from a number of detection elements from among the plurality of detection elements, the number being less than the number of detection elements that include the plurality of detection elements, if determining a radiation dose.

Abstract: A radiation imaging apparatus includes a unit constituted by arranging blocks in line and an information processing unit. Each of the blocks includes a conversion element configured to generate an image signal corresponding to radiation, a switching element connected between the conversion element and a column signal line, a detection element configured to detect radiation, and a detection signal line connected to the detection element. The information processing unit corrects a signal from the detection element, by using a value of the signal based on a parasitic capacitance between the conversion elements arranged on the same column as a column of the detection element.

Abstract: A radiation imaging apparatus includes a radiation detection unit including a plurality of sensors which detect radiation, and a monitoring unit which monitors irradiation of radiation based on signals detected by the plurality of sensors. The monitoring unit determines a plurality of effective sensor candidates from the plurality of sensors, and determines effective sensor(s) from effective sensor candidates excluding certain effective sensor candidates of the plurality of effective sensor candidates, the certain effective sensor candidates being an effective sensor candidate which has detected a signal having a maximum value and an effective sensor candidate which has detected a signal having a minimum value. The monitoring unit monitors irradiation of radiation based on signal(s) detected by the effective sensor(s).

Abstract: A radiation imaging apparatus includes a plurality of pixels for acquiring a radiation image and a plurality of sensors for detecting radiation, a processing unit for sampling outputs from sensors constituting an effective sensor group, out of the plurality of sensors, and outputting information for control of irradiation in accordance with the sampled outputs. In a first period after the irradiation to the radiation imaging apparatus starts, the processing unit excludes, from the effective sensor group, a sensor, a value corresponding to an output from which has exceeded a first threshold, out of the plurality of sensors, and in a second period after the first period, the processing unit outputs the information in accordance with outputs from the sensors constituting the effective sensor group.

Abstract: A radiation imaging apparatus includes pixels arranged to form an array, sensors including conversion elements dispersed in the array to monitor radiation, a processing circuit for processing signals from the sensors, first signal lines for transmitting a signal from at least one of the sensors to the processing circuit, and second signal lines extending in a direction parallel to the first signal lines and not directly connected to the pixels and the conversion elements or connected to at least one of the pixels and at least one of the sensors. The processing circuit determines a value of a signal generated by each sensor based on a difference between a value of a signal appearing on the first signal line and a value of a signal appearing on the second signal line.

Abstract: A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.

Abstract: A pixel includes a conversion element detecting radiation, and a switch between the element and a signal line. A readout unit reads out a signal on the signal line. The readout unit includes a reset unit that resets a potential of the signal line. A period during which the readout unit reads out a signal on the signal line includes a first period during which the signal line is reset, and a signal on the signal line in a state that the switch is not turned on is read out, and a second period during which the signal line is reset, and a signal on the signal line due to the switch being turned on is read out. The processing unit calculates a difference between the signals read out in the second and first periods.

Abstract: A radiation imaging apparatus includes a plurality of conversion elements configured to convert radiation into an electric signal to obtain a radiation image, a sensor for monitoring radiation, a processing unit configured to process signals output from output electrodes of the plurality of conversion elements and an output electrode of the sensor, and a shield. The signal output from the output electrode of the sensor is supplied to the processing unit via a signal line. The shield is arranged such that capacitive coupling between the output electrodes of the plurality of conversion elements and the signal line is reduced.

Abstract: A radiation imaging apparatus has a plurality of pixels including a plurality of imaging pixels for obtaining a radiation image and a detecting pixel for detecting radiation, a plurality of column signal lines, and a detection signal line corresponding to the detecting pixel. Each of the imaging pixels includes a first conversion element configured to convert radiation into an electrical signal, and a first switch arranged between the first conversion element and a corresponding column signal line among the plurality of column signal lines. The detecting pixel includes a second conversion element configured to convert radiation into an electrical signal, and a second switch arranged between the second conversion element and the detection signal line.

Abstract: A detecting device includes a conversion device having a substrate, a pixel electrode formed of a transparent conductive oxide, a impurity semiconductor portion, and a semiconductor portion, the pixel electrode, impurity semiconductor portion, and semiconductor portion having been formed upon the substrate in that order from the substrate side. The impurity semiconductor portion includes a first region including a place in contact with the pixel electrode, and a second region situated nearer to the semiconductor portion than the first region. Concentration of dopant in the second region is higher than concentration of dopant in the first region.

Abstract: A radiation detection apparatus includes conversion elements including a first electrode, a semiconductor layer, and a second electrode that are divided for each pixel; switching elements electrically connected to the first electrodes; and a first insulating layer that separates the conversion elements of adjacent pixels. The semiconductor layer is located between the first and second electrodes. A periphery of the semiconductor layer is located outside peripheries of the first and second electrodes. The semiconductor layer includes a first impurity semiconductor layer, a second impurity semiconductor layer, and an intrinsic semiconductor layer located between the first and second impurity semiconductor layers. Parameters of the apparatus are defined to set a residual charge 10 ?ts after the switching element is turned on to be not higher than 2%.

Abstract: A detecting apparatus includes a substrate that permits visible light to pass therethrough, a converting element that includes a pixel electrode, an impurity semiconductor layer, and a semiconductor layer arranged in that order from a side adjacent to the substrate and is configured to convert radiation or light into charge, and a light source configured to emit the visible light through the substrate to the converting element. The pixel electrode includes a metal layer that permits the visible light to pass therethrough.

Abstract: An active matrix panel includes a gate line connected to control electrodes of a plurality of transistors; and a drive circuit supplying the gate line with a conducting voltage and a non-conducting voltage. The drive circuit includes a shift register including a plurality of shift register unit circuits connected to each other, and a demultiplexer including a plurality of demultiplexer unit circuits into which output signals of the shift register unit circuits are input. The demultiplexer unit circuit includes a first transistor for supplying the gate line with the conducting voltage, and a second transistor for supplying the gate line with the non-conducting voltage. The first transistor is changed from a non-conducting state into a conducting state when the second transistor is in the conducting state.

Abstract: An active matrix panel includes a gate line connected to control electrodes of a plurality of transistors; and a drive circuit supplying the gate line with a conducting voltage and a non-conducting voltage. The drive circuit includes a shift register including a plurality of shift register unit circuits connected to each other, and a demultiplexer including a plurality of demultiplexer unit circuits into which output signals of the shift register unit circuits are input. The demultiplexer unit circuit includes a first transistor for supplying the gate line with the conducting voltage, and a second transistor for supplying the gate line with the non-conducting voltage. The first transistor is changed from a non-conducting state into a conducting state when the second transistor is in the conducting state.

Abstract: A method of manufacturing a detection apparatus including pixels is provided. The method includes forming an organic insulation layer above a substrate above which a switching element is formed, forming pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the pixel electrodes, forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion, forming a semiconductor film covering the inorganic insulation film, and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper.

Abstract: A detecting device includes a conversion device having a substrate, a pixel electrode formed of a transparent conductive oxide, a impurity semiconductor portion, and a semiconductor portion, the pixel electrode, impurity semiconductor portion, and semiconductor portion having been formed upon the substrate in that order from the substrate side. The impurity semiconductor portion includes a first region including a place in contact with the pixel electrode, and a second region situated nearer to the semiconductor portion than the first region. Concentration of dopant in the second region is higher than concentration of dopant in the first region.

Abstract: A detecting apparatus includes a substrate that permits visible light to pass therethrough, a converting element that includes a pixel electrode, an impurity semiconductor layer, and a semiconductor layer arranged in that order from a side adjacent to the substrate and is configured to convert radiation or light into charge, and a light source configured to emit the visible light through the substrate to the converting element. The pixel electrode includes a metal layer that permits the visible light to pass therethrough.

Abstract: A source follower connection line connects a gate of a source follower thin film transistor in a first pixel with a gate of a source follower thin film transistor in a second pixel, between adjacent first and second pixel, and a driving circuit turns the transfer thin film transistor in the first pixel region ON and turns the transfer thin film transistor in the second pixel OFF to make the transfer thin film transistor in the first pixel region output the signal of the first pixel.

Abstract: In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

Abstract: A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.