Patents by Inventor Hiroshi Yanagi

Hiroshi Yanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210102821
    Abstract: An in-vehicle apparatus includes: a selection unit configured to select at least one candidate camera from plural cameras based on position information of each of the plural cameras; a reception unit configured to establish communication connection with the candidate camera selected by the selection unit and to start to receive video captured by the candidate camera; and a display control unit configured to display the video received by the reception unit in response to a predetermined display condition being satisfied.
    Type: Application
    Filed: September 11, 2020
    Publication date: April 8, 2021
    Applicant: DENSO TEN Limited
    Inventors: Shinichi SHIOTSU, Tomoe OHTSUKI, Toshiyuki MORIBAYASHI, Motoki KOJIMA, Hiroshi YANAGI
  • Publication number: 20210005890
    Abstract: A method of manufacturing a battery electrode material in slurry form to be coated on a sheet-shaped current collector, the battery electrode material containing an electrode active material made of electrolytic manganese dioxide (EMD) and containing an aqueous binder. The method includes, as a process of mixing and kneading raw materials of the battery electrode material by using water as a solvent, mixing the electrode active material; mixing the binder; and mixing a neutralizing agent, the neutralizing agent being lithium hydroxide (LiOH).
    Type: Application
    Filed: September 18, 2020
    Publication date: January 7, 2021
    Applicant: FDK CORPORATION
    Inventors: Yuki Ochiai, Maki Suzuki, Daisuke Hirata, Hiroshi Yanagi
  • Patent number: 10868336
    Abstract: The present invention provides a non-aqueous electrolytic solution for a lithium secondary battery or a lithium ion capacitor, wherein the non-aqueous electrolytic solution includes a lithium salt as dissolved in a non-aqueous solvent in a concentration of 0.8 to 1.5 M (mol/L), the non-aqueous solvent includes, in relation to the whole of the non-aqueous solvent, 5 to 25% by volume of ethylene carbonate, 5 to 25% by volume of propylene carbonate, 20 to 30% by volume of dimethyl carbonate, 20 to 40% by volume of methyl ethyl carbonate, and 10 to 20% by volume of a fluorinated chain ester; the total content of ethylene carbonate and propylene carbonate in the non-aqueous solvent is 20 to 30% by volume, the total content of dimethyl carbonate and the fluorinated chain ester in the non-aqueous solvent is 30 to 40% by volume; and the flash point of the non-aqueous electrolytic solution is 20° C. or higher, and the present invention also provides an energy storage device.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: December 15, 2020
    Assignee: UBE INDUSTRIES, LTD.
    Inventors: Koji Abe, Makoto Babazono, Masahide Kondo, Hiroshi Yanagi, Kei Shimamoto
  • Patent number: 10790507
    Abstract: A method for preparing cathode material for a lithium primary battery includes an active cathode material and an active anode material. The active cathode material is manganese dioxide, and the active anode material is either one of lithium metal and lithium alloy. The method includes: a first kneading step in which a boron compound and a thickening agent are kneaded with a diluent to prepare a paste made by dissolving the boron compound in the diluent; a second kneading step in which the paste is kneaded with a conductive additive; and a third kneading step in which the paste obtained in the second kneading step is kneaded with the active cathode material and a binder to prepare the cathode material in slurry form.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: September 29, 2020
    Assignee: FDK CORPORATION
    Inventors: Yuki Ochiai, Naoaki Nishimura, Daisuke Hirata, Hiroshi Yanagi
  • Publication number: 20180301701
    Abstract: A method for preparing cathode material for a lithium primary battery includes an active cathode material and an active anode material. The active cathode material is manganese dioxide, and the active anode material is either one of lithium metal and lithium alloy. The method includes: a first kneading step in which a boron compound and a thickening agent are kneaded with a diluent to prepare a paste made by dissolving the boron compound in the diluent; a second kneading step in which the paste is kneaded with a conductive additive; and a third kneading step in which the paste obtained in the second kneading step is kneaded with the active cathode material and a binder to prepare the cathode material in slurry form.
    Type: Application
    Filed: April 11, 2018
    Publication date: October 18, 2018
    Applicant: FDK CORPORATION
    Inventors: Yuki Ochiai, Naoaki Nishimura, Daisuke Hirata, Hiroshi Yanagi
  • Publication number: 20180277900
    Abstract: The present invention provides a non-aqueous electrolytic solution for a lithium secondary battery or a lithium ion capacitor, wherein the non-aqueous electrolytic solution includes a lithium salt as dissolved in a non-aqueous solvent in a concentration of 0.8 to 1.5 M (mol/L), the non-aqueous solvent includes, in relation to the whole of the non-aqueous solvent, 5 to 25% by volume of ethylene carbonate, 5 to 25% by volume of propylene carbonate, 20 to 30% by volume of dimethyl carbonate, 20 to 40% by volume of methyl ethyl carbonate, and 10 to 20% by volume of a fluorinated chain ester; the total content of ethylene carbonate and propylene carbonate in the non-aqueous solvent is 20 to 30% by volume, the total content of dimethyl carbonate and the fluorinated chain ester in the non-aqueous solvent is 30 to 40% by volume; and the flash point of the non-aqueous electrolytic solution is 20° C. or higher, and the present invention also provides an energy storage device.
    Type: Application
    Filed: September 29, 2016
    Publication date: September 27, 2018
    Applicant: UBE INDUSTRIES, LTD.
    Inventors: Koji ABE, Makoto BABAZONO, Masahide KONDO, Hiroshi YANAGI, Kei SHIMAMOTO
  • Patent number: 8435473
    Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F?, Cl? or Br?). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+).
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: May 7, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Yoichi Kamihara, Masahiro Hirano, Toshio Kamiya, Hiroshi Yanagi
  • Patent number: 8420236
    Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: April 16, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Masahiro Hirano, Hidenori Hiramatsu, Toshio Kamiya, Hiroshi Yanagi, Eiji Motomitsu
  • Patent number: 8288321
    Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: October 16, 2012
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
  • Publication number: 20110111965
    Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
    Type: Application
    Filed: July 9, 2009
    Publication date: May 12, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
  • Publication number: 20110045985
    Abstract: A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).
    Type: Application
    Filed: February 20, 2009
    Publication date: February 24, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Yoichi Kamihara, Takatoshi Nomura
  • Publication number: 20110002832
    Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F?, Cl? or Br?). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+).
    Type: Application
    Filed: February 17, 2009
    Publication date: January 6, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Yoichi Kamihara, Masahiro Hirano, Toshio Kamiya, Hiroshi Yanagi
  • Publication number: 20090042058
    Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
    Type: Application
    Filed: August 1, 2006
    Publication date: February 12, 2009
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Masahiro Hirano, Hidenori Hiramatsu, Toshio Kamiya, Hiroshi Yanagi, Eiji Motomitsu
  • Patent number: 6294274
    Abstract: An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: September 25, 2001
    Assignees: TDK Corporation
    Inventors: Hiroshi Kawazoe, Hideo Hosono, Atsushi Kudo, Hiroshi Yanagi