Abstract: Devices, methods, and kits for collecting sweat that has come to the surface of the skin are provided. The sweat may be collected for measuring sweat glucose levels. Because sweat glucose levels correlate to blood glucose levels, the provided devices, methods, and kits may be used by diabetic patients to non-invasively monitor blood glucose levels. Sweat collection devices may be attachable to the surface of the skin and may collect about one microliter or less of sweat. Because only a small, fixed volume of sweat may be collected, the sweat glucose level may be measured in a matter of minutes. Further, as a fixed volume of sweat is tested, inaccuracies due to estimates of the sweat volume being tested are less likely to cause an inaccurate glucose measurement.

Abstract: This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.

Abstract: A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.

Abstract: A negative photoresist having benzene rings is irradiated with short-wavelength ultraviolet radiation, and is developed to form a photoresist pattern whose sectional shape is an inverted trapezoid. Using the photoresist pattern, the lift-off process having heretofore required troublesome steps can be performed very easily.

Abstract: In forming an interconnection pattern on a silicon substrate, an Al-Si alloy is used as an interconnection material, a silicon film is deposited on the Al-Si alloy film, and a photoresist layer is applied and thereafter exposed to light to provide a photoresist pattern to serve as a mask for subsequent etching of the Al-Si alloy film.Thus, the generation of standing waves due to reflection at the exposure is prevented, a microscopic interconnection pattern is precisely formed, and neither the junction-through due to a heat treatment nor a degradation in the bonding characteristics occurs.

Abstract: In selectively etching a solid oxide thin film which has chemisorbed water (surface hydroxyl groups) in its surface, the thin film is surface-treated with an organic compound which has within its molecule a functional group to react with the surface hydroxyl groups. Thereafter, photo-etching is performed by the conventional method by applying a thin film of a photosensitive organic polymer onto the treated thin film. Through selection of the sort of the organic compound, the degree of side-etch arising in the process of the selective etch can be controlled.