Abstract: A spring steel wire includes, by mass %, C: 0.40% to 0.75%, Si: 1.00% to 5.00%, Mn: 0.20% to 2.00%, P: 0.0001% to 0.0500%, S: 0.0001% to 0.0500%, Cr: 0.50% to 3.50%, Al: 0.0005% to 0.0500%, N: 0.0020% to 0.0100%, Mo: 0% to 2.00%, V: 0% to 0.50%, W: 0% to 0.50%, Nb: 0% to 0.100%, Ti: 0% to 0.100%, Ca: 0% to 0.0100%, Mg: 0% to 0.0100%, Zr: 0% to 0.1000%, B: 0% to 0.0100%, Cu: 0% to 1.00%, Ni: 0% to 3.00%, and a remainder consisting of Fe and impurities. A structure includes, by area radio, tempered martensite of 90% or more. The prior austenite grain size number is No. 12.5 or higher. The presence density of iron-based carbide having an equivalent circle diameter ranging from 0.15 ?m to 0.50 ?m ranges from 0.40 pieces/?m2 to 2.00 pieces/?m2.

Abstract: A spring steel wire includes, by mass %, C: 0.40% to 0.75%, Si: 1.00% to 5.00%, Mn: 0.20% to 2.00%, P: 0.0001% to 0.0500%, S: 0.0001% to 0.0500%, Cr: 0.50% to 3.50%, Al: 0.0005% to 0.0500%, N: 0.0020% to 0.0100%, Mo: 0% to 2.00%, V: 0% to 0.50%, W: 0% to 0.50%, Nb: 0% to 0.100%, Ti: 0% to 0.100%, Ca: 0% to 0.0100%, Mg: 0% to 0.0100%, Zr: 0% to 0.1000%. B: 0% to 0.0100%, Cu: 0% to 1.00%, Ni: 0% to 3.00%, and a remainder consisting of Fe and impurities. A structure includes, by area radio, tempered martensite of 90% or more. The prior austenite grain size number is No. 12.5 or higher. The presence density of iron-based carbide having an equivalent circle diameter ranging from 0.15 ?m to 0.50 ?m ranges from 0.40 pieces/?m2 to 2.00 pieces/?m2.

Abstract: A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.

Abstract: A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.

Abstract: A high-strength oil-tempered steel wire with excellent spring fabrication property that is made of spring low-alloy steel, having a decarburized layer of reduced hardness extending to a depth of not greater than 200 .mu.m from the wire surface, a wire surface hardness in the range from an Hv (Vickers hardness) of 420 to an Hv of 50 below the Hv of the wire interior, and an Hv at the interior of the wire beyond the depth of the decarburized layer of not less than 550. The spring low-alloy steel can preferably comprise, in weight percent, 0.45-0.80% C, 1.2-2.5% Si, 0.5-1.5% Mn, 0.5-2.0% Cr and the balance of Fe and unavoidable impurities.

Abstract: The present invention provides, at low cost, a valve spring steel having a tensile strength as high as 210 to 240 kgf/mm.sup.2 after oil tempering. The high strength spring steel comprises, based on weight, 0.65 to 0.85% of C, 1.90 to 2.40% of Si, 0.50 to 1.00% of Mn, 0.70 to 1.30% of Cr, 0.10 to 0.30% of Mo, 0.20 to 0.50% of V, 0.01 to 0.04% of Nb and the balance Fe and unavoidable impurities and is subjected to heating at temperature of 1,050 to 1,250.degree. C. and then to rolling so that carbides in the steel have a size of up to 0.15 .mu.m in terms of equivalent circle. A valve spring having a tensile strength as high as 210 to 240 kgf/mm.sup.2 after oil tempering and stabilized quality can be produced while the material cost is greatly reduced by decreasing costly alloying components as much as possible.

Abstract: A process for producing a coil spring comprises steps of: cold drawing a wire comprising: C in an amount of 0.55 to 0.75% by weight; Si in an amount of 1.00 to 2.50% by weight; at least two primary metals selected from the primary metal group consisting of: Mn in an amount of 0.30 to 1.5% by weight; Ni in an amount of 1.00 to 4.00% by weight; Cr in an amount of 0.50 to 2.50% by weight; Mo in an amount of 0.10 to 1.00% by weight; at least one secondary metal selected from the secondary metal group consisting of: V in an amount of 0.05 to 0.60% by weight; Nb in an amount of 0.05 to 0.60% by weight; and the balance of substantially Fe; oil quenching and tempering the wire; hot tempering the wire, thereby preparing the tempered wire whose tensile strength .sigma.b falls in the range of from 1370 to 1670 N/mm.sup.2 ; cold coiling; hardening and tempering; grinding; gas nitriding; high strength two-stage shot peening; and low temperature annealing the tempered wire.