Abstract: A charged particle exposure system uses a method for accurately and efficiently generating a required pattern having an optional angle .theta.. The method uses a reference isosceles right triangle. According to the reference triangle, a plurality of rectangular beams are formed. Each of the rectangular beams is multiplied by tan .theta. of the optional angle .theta., thereby preparing data of beams necessary for forming the required pattern.

Abstract: A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam.

Abstract: A barrier electrode is formed above an article to be exposed so as to be opposite the surface of the article to be exposed. A voltage is applied to the barrier electrode so as to form a barrier electric field surrounding the optical axis of a charged particle beam and surrounding the article to be exposed.

Abstract: An epoxy resin composition used for sealing of semiconductor devices, comprising as essential components:(A) an epoxy resin containing 50-100% by weight, based on total epoxy resin amount, of an epoxy compound represented by formula (I) ##STR1## wherein R.sub.1 to R.sub.8, which may be the same or different, are each an atom or group selected from the group consisting of hydrogen atom, halogen atoms and alkyl groups,(B) a phenolic resin curing agent containing 30-100% by weight, based on total phenolic resin curing agent amount, of a phenolic resin curing agent represented by formula (II) ##STR2## wherein R is paraxylylene group or a residual group which is obtained by removing two hydrogen atoms from dicylopentadiene, a terpene, cyclopentane or cyclohexane, and n is an integer of 0 to 4,(C) an inorganic filler, and(D) a curing accelerator.

Abstract: A charged particle beam exposure apparatus employs a main deflector made of electromagnetic coils and a subdeflector made of electrostatic deflection electrodes. An exposure method used for this apparatus is capable of shortening a wait time of the main deflector. The main deflector deflects a charged particle beam in a direction X, while the subdeflector deflects the beam around the deflecting position of the main deflector to expose an object to the beam. An area to be exposed on the object is divided into thin subfields such that the width, in an X-axis direction of each subfield, is approximately 1/3 the length in a Y-axis direction of the same.

Abstract: A battery plate for lead acid storage batteries using a grid prepared by expanding a lead-calcium-tin (Pb--Ca--Sn) alloy sheet, is made by expanding a Pb--Ca--Sn alloy sheet having a tensile strength of 6.0 kg/mm.sup.2 or lower and an Sn content of 0.6-1.8% by weight to make a grid,filling this grid with an active material paste, and then aging the grid to increase the tensile strength of the expanded grid to 7.0 kg/mm.sup.2 or higher. The workability in expanding of the Pb--Ca--Sn alloy sheet can be improved and furthermore, concentration of stress strain on the nodes of the grid can be inhibited and thus, corrosion of the nodes can be inhibited. The aging can provide a battery pate having a high tensile strength and a lead acid storage battery having an excellent charge-discharge cycle life characteristics.

Abstract: In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.

Abstract: A charged-particle beam exposure method is used for a charged-particle beam exposure apparatus equipped with a blanking aperture array plate in which columns are arranged side by side in a first direction, and each of the columns includes a plurality of blanking apertures arranged in a second direction substantially perpendicular to the first direction, a charged-particle beam being moved on a wafer in the first direction. The method includes the steps of (a) determining one of first and second axes of a pattern to be exposed to be a priority axis; (b) projecting an image of the blanking aperture array plate onto the wafer so that the priority axis is perpendicular to the second direction; and (c) deflecting the charged-particle beam so that the wafer is scanned in the direction of the priority axis.

Abstract: Compounds of formula (I): ##STR1## in which: Ar is optionally substituted phenyl; R.sup.1 is alkyl; R.sup.2 is substituted alkyl or substituted cycloalkyl; and n is 0, 1 or 2; and pharmaceutically acceptable salts and esters thereof have valuable anti-fungal properties and can be used for pharmaceutical and veterinary treatment. Methods of preparing these compounds are also provided.

Abstract: A radiotelephone communication system is provided, in which radio communication channels including control channels and a plurality of communication channels are set between a plurality of base stations and a plurality of mobile stations provided within radio zones of the base stations, an outgoing call and an incoming call are controlled and the communication channels are designated via the control channels, a telephone conversation is made via the communication channels, channels of different frequencies are allocated to adjacent radio zones of the radio zones, each base station includes a circuit for detecting receiving electric field intensity of mobile station and the channel, the base station and operation of radio transmitter and receiver of the mobile station are set such that, when the mobile station is moved between the radio zones, the mobile station is constantly connected to the base station whose communication state is satisfactory.

Abstract: A charged particle beam exposure method for deflecting a charged particle beam in a deflection system which includes electromagnetic deflection coils, includes the steps of (a) controlling the deflection system based on deflection data, and (b) generating heat at least a vicinity of the electromagnetic deflection coils so as to compensate for a change in heat generated from the electromagnetic deflection coils.

Abstract: A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.

Abstract: An electron beam exposure process includes a step of producing a plurality of electron beam elements from a single electron beam by shaping and radiating the plurality of electron beam elements on a substrate. The exposure is achieved in a plurality of times with respective electron beam patterns by means of different sets of electron beam elements, wherein the electron beam elements of different sets are produced simultaneously and deflected simultaneously so as to scan the substrate consecutively. The electron beam elements in one set are offset from corresponding electron beam elements of the other set by a pitch of M/N wherein N represents the number of the electron beam sets and M is an integer smaller than N.

Abstract: An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a predetermined direction so as to shape the electron beam into a plurality of electron beams, a deflection device for regularly deflecting the electron beams passed through the blanking aperture array, and an electron beam controller for controlling the electron beams passed through the blanking aperture array so as to irradiate and expose an object surface. The electron gun has a needle shaped chip which comprises a pair of sloping surfaces which are <100> faces, and a vertex portion connecting the sloping surfaces and forming an inverted V-shape at a tip end of the needle shaped chip when viewed in a direction in which the vertex portion extends.

Abstract: A method for exposing a pattern of a semiconductor device on an object comprises the steps of extracting block exposure data from design data the semiconductor device, extracting variable exposure data from the design data, extracting fine exposure data from the variable exposure data such that the fine exposure data comprises exposure data for fine elemental patterns that have a size smaller than a predetermined threshold size below which exposure by a variable shaped beam is difficult, extracting mask data indicative of a construction of a beam shaping mask used for shaping the beam based upon the block exposure data, variable exposure data and the fine exposure data, such that the mask data includes information about location, size and shape of apertures formed on the beam shaping mask for shaping the beam, fabricating the beam shaping mask based upon the mask data, and exposing the device pattern by selectively passing the beam through one of the block apertures, the variable exposure aperture and the fin

Abstract: A pattern judging method which is to be implemented on a computer automatically determines whether or not a pattern should be prohibited from being formed in a mask. The pattern judging method includes the steps of (a) dividing an area of the mask where a desired pattern is to be formed into a plurality of regions, (b) calculating a predetermined physical quantity for each of the regions for a case where one or a plurality of openings corresponding to the desired pattern are formed in the mask, and (c) prohibiting the desired pattern from being formed in the mask if the predetermined quantity calculated in the step (b) exceeds a threshold value for at least one of the regions.

Abstract: A charged particle beam exposure method deflects a charged particle beam in a deflection system which includes electromagnetic deflection coils and an electromagnetic lens. The charged particle beam exposure method includes controlling the deflection system based on deflection data, and blocking heat radiation from at least the electromagnetic deflection coils by a partition so as to prevent the heat radiation from reaching the electromagnetic lens and to prevent heat conduction to the electromagnetic lens by the partition.

Abstract: A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.

Abstract: A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.

Abstract: A method for writing a pattern on an object by a charged particle beam comprises the steps of: dividing a pattern to be written on the object into a plurality of pattern blocks that cause a proximity effect with each other; determining a pattern density for each of said pattern blocks; selecting a specific pattern block as a reference pattern block; setting a dose level of exposure of the charged particle beam to a reference dose level such that the reference pattern block is exposed with a predetermined total dose level which includes the contribution of the exposure by the charged particle beam and the contribution of the exposure by the backscattered charged particles; exposing the plurality of pattern blocks including the reference pattern block by the charged particle beam with the reference dose level; and exposing those pattern blocks that have the pattern density smaller than the pattern density of the reference pattern block by a defocused charged particle beam with a total dose level set such that t