Patents by Inventor Hirosi Sobukawa
Hirosi Sobukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080302963Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechType: ApplicationFiled: July 22, 2008Publication date: December 11, 2008Applicant: EBARA CORPORATIONInventors: Mamoru NAKASUJI, Nobuharu NOJI, Tohru SATAKE, Toshifumi KIMBA, Hirosi SOBUKAWA, Tsutomu KARIMATA, Shin OOWADA, Shoji YOSHIKAWA, Mutsumi SAITO
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Patent number: 7439502Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.Type: GrantFiled: June 11, 2007Date of Patent: October 21, 2008Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
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Patent number: 7423267Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.Type: GrantFiled: September 28, 2006Date of Patent: September 9, 2008Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Kenji Watanabe, Takao Kato, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima
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Patent number: 7420164Abstract: An electron beam system or a method for manufacturing a device using the electron beam system in which an electron beam can be irradiated at a high current density and a ratio of transmittance of a secondary electron beam of an image projecting optical system can be improved and which can be compact in size. The surface of the sample S is divided into plural stripe regions which in turn are divided into rectangle-shaped main fields. The main field is further divided into plural square-shaped subfields. The irradiation with the electron beams and the formation of a two-dimensional image are repeated in a unit of the subfields. A magnetic gap formed by the inner and outer magnetic poles of the objective lens is formed on the side of the sample, and an outer side surface and an inner side surface of each of the inner magnetic pole and the outer magnetic pole, respectively, forming the magnetic gap have each part of a conical shape with a convex having an angle of 45° or greater with respect to the optical axis.Type: GrantFiled: May 25, 2005Date of Patent: September 2, 2008Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Tohru Satake, Hirosi Sobukawa, Takeshi Murakami, Kenji Watanabe, Nobuharu Noji
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Patent number: 7417236Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechType: GrantFiled: February 24, 2006Date of Patent: August 26, 2008Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Tsutomu Karimata, Shin Oowada, Shoji Yoshikawa, Mutsumi Saito
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Patent number: 7408175Abstract: A substrate inspection apparatus 1-1 (FIG.Type: GrantFiled: April 12, 2007Date of Patent: August 5, 2008Assignee: Ebara CorporationInventors: Toshifumi Kimba, Tohru Satake, Tsutomu Karimata, Kenji Watanabe, Nobuharu Noji, Takeshi Murakami, Masahiro Hatakeyama, Mamoru Nakasuji, Hirosi Sobukawa, Shoji Yoshikawa, Shin Oowada, Mutsumi Saito
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Publication number: 20080173815Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.Type: ApplicationFiled: February 8, 2008Publication date: July 24, 2008Applicant: Ebara CorporationInventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
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Publication number: 20080173814Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.Type: ApplicationFiled: February 7, 2008Publication date: July 24, 2008Applicants: EBARA CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Kenji Watanabe, Hirosi Sobukawa, Nobuharu Noji, Tohru Satake, Shoji Yoshikawa, Tsutomu Karimata, Mamoru Nakasuji, Masahiro Hatakeyama, Takeshi Murakami, Yuichiro Yamazaki, Ichirota Nagahama, Takamitsu Nagai, Kazuyoshi Sugihara
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Patent number: 7385197Abstract: Disclosed is an electron beam apparatus, in which a plurality of electron beams is formed from electrons emitted from an electron gun 21 and used to irradiate a sample surface via an objective lens 28, said apparatus comprising: a beam separator 27 for separating a secondary electron beams emanating from respective scanned regions on the sample from the primary electron beams; a magnifying electron lens 31 for extending a beam space between adjacent beams in the separated plurality of secondary electron beams; a fiber optical plate 32 for converting the magnified plurality of secondary electron beams to optical signals by a scintillator and for transmitting the signals; a photoelectric conversion device 35 for converting the optical signal to an electric signal; an optical zoom lens 33 for focusing the optical signal from the scintillator into an image on the photoelectric conversion device; and a rotation mechanism 36 for rotating the photoelectric conversion device 35 around the optical axis.Type: GrantFiled: July 7, 2005Date of Patent: June 10, 2008Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Takeshi Murakami, Hirosi Sobukawa, Toru Kaga, Masahiro Hatakayama
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Publication number: 20080121804Abstract: The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate.Type: ApplicationFiled: December 10, 2007Publication date: May 29, 2008Applicant: EBARA CORPORATIONInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Masahiro Hatakeyama, Kenji Watanabe, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Shin Oowada, Mutsumi Saito, Muneki Hamashima
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Patent number: 7365324Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.Type: GrantFiled: March 20, 2006Date of Patent: April 29, 2008Assignee: Ebara CorporationInventors: Nobuharu Noji, Tohru Satake, Hirosi Sobukawa, Toshifumi Kimba, Masahiro Hatakeyama, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Kenichi Suematsu, Yutaka Tabe, Ryo Tajima, Keiichi Tohyama
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Patent number: 7351969Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.Type: GrantFiled: December 1, 2005Date of Patent: April 1, 2008Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Kenji Watanabe, Hirosi Sobukawa, Nobuharu Noji, Tohru Satake, Shoji Yoshikawa, Tsutomu Karimata, Mamoru Nakasuji, Masahiro Hatakeyama, Takeshi Murakami, Yuichiro Yamazaki, Ichirota Nagahama, Takamitsu Nagai, Kazuyoshi Sugihara
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Publication number: 20080067377Abstract: An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 ?m with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons.Type: ApplicationFiled: June 8, 2007Publication date: March 20, 2008Applicant: EBARA CORPORATIONInventors: Masahiro Hatakeyama, Takeshi Murakami, Nobuharu Noji, Mamoru Nakasuji, Hirosi Sobukawa, Satoshi Mori, Tsutomu Karimata
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Publication number: 20080042060Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.Type: ApplicationFiled: October 9, 2007Publication date: February 21, 2008Applicant: EBARA CORPORATIONInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi
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Publication number: 20070272859Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc.. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.Type: ApplicationFiled: June 11, 2007Publication date: November 29, 2007Applicant: Ebara CorporationInventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
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Patent number: 7297949Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.Type: GrantFiled: September 28, 2006Date of Patent: November 20, 2007Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi
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Publication number: 20070194235Abstract: A substrate inspection apparatus 1-1 (FIG.Type: ApplicationFiled: April 12, 2007Publication date: August 23, 2007Applicant: EBARA CORPORATIONInventors: Toshifumi Kimba, Tohru Satake, Tsutomu Karimata, Kenji Watanabe, Nobuharu Noji, Takeshi Murakami, Masahiro Hatakeyama, Mamoru Nakasuji, Hirosi Sobukawa, Shoji Yoshikawa, Shin Oowada, Mutsumi Saito
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Patent number: 7247848Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.Type: GrantFiled: May 28, 2003Date of Patent: July 24, 2007Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Tohru Satake, Kenji Watanabe, Takeshi Murakami, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Toru Takagi, Naoto Kihara, Hiroshi Nishimura
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Patent number: 7244932Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.Type: GrantFiled: November 2, 2001Date of Patent: July 17, 2007Assignee: Ebara CorporationInventors: Mamoru Nakasuji, Tohru Satake, Nobuharu Noji, Hirosi Sobukawa, Tsutomu Karimata, Shoji Yoshikawa, Toshifumi Kimba, Shin Oowada, Mutsumi Saito, Muneki Hamashima, Yoshiaki Kohama, Yukiharu Okubo
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Patent number: 7241993Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: GrantFiled: June 27, 2001Date of Patent: July 10, 2007Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama