Patents by Inventor Hirota Uchida

Hirota Uchida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110204466
    Abstract: A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.
    Type: Application
    Filed: August 28, 2009
    Publication date: August 25, 2011
    Applicant: ULVAC, INC.
    Inventors: Shinichi Asahina, Hirota Uchida, Shin Asari, Masanori Hashimoto, Tetsushi Fujinaga, Tadamasa Kobayashi, Masafumi Wakai, Kenichi Imakita, Yoshinobu Ue, Kazuya Saito, Kyuzo Nakamura
  • Publication number: 20110155232
    Abstract: A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere.
    Type: Application
    Filed: August 28, 2009
    Publication date: June 30, 2011
    Applicant: ULVAC, INC.
    Inventors: Hirota Uchida, Tetsushi Fujinaga, Yoshinobu Ue, Kazuya Saito, Kyuzo Nakamura