Abstract: The present invention relates to a silica glass member including: a main body including a silica glass and having a bonding part for bonding to another member; and a bonding film which is provided on the bonding part, has a thickness of 0.2 ?m to 10 ?m, and includes Au and a glass formed through melting of glass frit, in which the bonding film is produced from Au powder having an average particle diameter of 3 ?m or less and glass frit having a softening point of 850° C. or lower, a process for producing a silica glass member, and a process for bonding a ceramic and a silica glass.

Abstract: The present invention relates to a silica glass member including: a main body including a silica glass and having a bonding part for bonding to another member; and a bonding film which is provided on the bonding part, has a thickness of 0.2 ?m to 10 ?m, and includes Au and a glass formed through melting of glass frit, in which the bonding film is produced from Au powder having an average particle diameter of 3 ?m or less and glass frit having a softening point of 850° C. or lower, a process for producing a silica glass member, and a process for bonding a ceramic and a silica glass.

Abstract: There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 ?m to 1.3 ?m.

Abstract: There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 &mgr;m to 1.3 &mgr;m.

Abstract: A wafer processing member having: a base material made of a material isotropic in all in-plane directions; and a ceramic film with which the base material is coated; wherein: the base material has a thickness of not larger than 3 mm; difference in coefficient of thermal expansion between the base material and the ceramic film is in a range of from 0.6×10−6 to 1.2×10−6/° C.; and variation in coefficient of thermal expansion of the base material in all in-plane directions is not larger than 0.05×10−6/° C.

Abstract: The invention is to offer such a carbon electrode of less consumption and a long useful life and a method of fabricating the same which prevents particles from falling from carbon electrodes into a melting quartz glass, checks occurrence of bubbles in the quartz glass, and avoids lowering of single crystallizing yield by bubbles existing in a transparent layer formed in the vicinity of an inside surface of a quartz glass crucible when lifting silicon single crystal by using the quartz glass crucible made by using the carbon electrodes. The carbon electrode to be used for melting quartz glass by an arc discharge, is characterized in that an electrode material is composed of carbon of bulk density being 1.80 g/cm3 or higher and a three-point bending strength being 35 MPa or higher.