Patents by Inventor Hirotaka Ikeda

Hirotaka Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190312111
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.
    Type: Application
    Filed: June 18, 2019
    Publication date: October 10, 2019
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Satoru NAGAO, Yusuke TSUKADA, Kazunori KAMADA, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO, Hideo FUJISAWA, Yutaka MIKAWA, Tae MOCHIZUKI
  • Publication number: 20190291083
    Abstract: The present invention provides exhaust gas purification catalyst for an internal combustion engine, and exhaust gas purification method using the catalyst. The present invention provides the exhaust gas purification catalyst including a support, a first catalyst layer on an upstream side, a second catalyst layer on a downstream side, and a third catalyst layer. In the exhaust gas purification catalyst, the upstream portion of the third catalyst layer is present on the first catalyst layer, the downstream portion of the third catalyst layer is present on the second catalyst layer, and in the middle portion between the upstream portion and the downstream portion of the third catalyst layer is present between the first catalyst layer and the second catalyst layer.
    Type: Application
    Filed: July 20, 2017
    Publication date: September 26, 2019
    Applicant: Umicore Shokubai Japan Co., Ltd.
    Inventors: Kazuyoshi KOMATA, Hirotaka KUNO, Yuzo HAMADA, Masashi NAKASHIMA, Yuji OGINO, Masanori IKEDA
  • Publication number: 20190232258
    Abstract: A catalyst for purification of exhaust gas containing a phosphorus compound includes: a lower catalyst layer containing at least one of noble metal provided on a refractory three-dimensional structure; and an upper catalyst layer at an inflow side of exhaust gas and an upper catalyst layer at an outflow side of exhaust gas provided on a surface of the lower catalyst layer. The upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side have different concentrations of noble metal. The catalyst has an intermediate zone with a length of 3 to 23% of the overall length of the refractory three-dimensional structure provided between the upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side. The intermediate zone starts from a position 10 to 38% from an end face of the catalyst at the inflow side of exhaust gas.
    Type: Application
    Filed: July 20, 2017
    Publication date: August 1, 2019
    Applicant: Umicore Shokubai Japan Co., Ltd.
    Inventors: Hirotaka KUNO, Masashi NAKASHIMA, Yuzo HAMADA, Masanori IKEDA
  • Publication number: 20190203379
    Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
    Type: Application
    Filed: March 8, 2019
    Publication date: July 4, 2019
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
  • Publication number: 20190181283
    Abstract: A method for manufacturing a solar panel includes preparing a laminated body including a plastic protection cover that is light-transmissive and is curved in a convex manner, a flat plastic back cover, a photovoltaic battery cell, and an encapsulant that holds the photovoltaic battery cell in an encapsulated state, mounting the laminated body on a laminating jig such that the back cover abuts the laminating jig, and heating the laminated body with the laminating jig and compression-bonding the laminated body by holding the laminated body between a diaphragm and the laminating jig, thereby obtaining a solar panel from the laminated body. The laminating jig is curved in a convex manner toward the laminated body.
    Type: Application
    Filed: December 11, 2018
    Publication date: June 13, 2019
    Applicants: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hirotaka INABA, Kazumasa OKUMURA, Koki IKEDA, Motoya SAKABE, Kazuyoshi OGATA
  • Patent number: 10309038
    Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: June 4, 2019
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
  • Publication number: 20180258552
    Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.
    Type: Application
    Filed: May 11, 2018
    Publication date: September 13, 2018
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Yuuki ENATSU, Satoru NAGAO, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO
  • Patent number: 10023976
    Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: July 17, 2018
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yuuki Enatsu, Satoru Nagao, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito
  • Publication number: 20180105953
    Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
    Type: Application
    Filed: December 14, 2017
    Publication date: April 19, 2018
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yutaka MIKAWA, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
  • Publication number: 20180057960
    Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.
    Type: Application
    Filed: November 1, 2017
    Publication date: March 1, 2018
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Yuuki ENATSU, Satoru NAGAO, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO
  • Patent number: 9890474
    Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: February 13, 2018
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yutaka Mikawa, Hideo Namita, Hirotaka Ikeda, Kazunori Kamada, Hideo Fujisawa, Atsuhiko Kojima
  • Patent number: 9840791
    Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: December 12, 2017
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yuuki Enatsu, Satoru Nagao, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito
  • Publication number: 20170200789
    Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
    Type: Application
    Filed: March 29, 2017
    Publication date: July 13, 2017
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke TSUKADA, Shuichi KUBO, Kazunori KAMADA, Hideo FUJISAWA, Tatsuhiro OHATA, Hirotaka IKEDA, Hajime MATSUMOTO, Yutaka MlKAWA
  • Patent number: 9673046
    Abstract: The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: June 6, 2017
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Shuichi Kubo, Kazunori Kamada, Hideo Fujisawa, Tatsuhiro Ohata, Hirotaka Ikeda, Hajime Matsumoto, Yutaka Mikawa
  • Publication number: 20160233306
    Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.
    Type: Application
    Filed: February 5, 2016
    Publication date: August 11, 2016
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Satoru NAGAO, Yusuke Tsukada, Kazunori Kamada, Shuichi Kubo, Hirotaka Ikeda, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tae Mochizuki
  • Publication number: 20150361587
    Abstract: An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
    Type: Application
    Filed: August 21, 2015
    Publication date: December 17, 2015
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yutaka MIKAWA, Hideo NAMITA, Hirotaka IKEDA, Kazunori KAMADA, Hideo FUJISAWA, Atsuhiko KOJIMA
  • Publication number: 20150311068
    Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
    Type: Application
    Filed: June 16, 2015
    Publication date: October 29, 2015
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke TSUKADA, Shuichi KUBO, Kazunori KAMADA, Hideo FUJISAWA, Tatsuhiro OHATA, Hirotaka IKEDA, Hajime MATSUMOTO, Yutaka MIKAWA
  • Publication number: 20150093318
    Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.
    Type: Application
    Filed: September 30, 2014
    Publication date: April 2, 2015
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yuuki ENATSU, Satoru NAGAO, Shuichi KUBO, Hirotaka IKEDA, Kenji FUJITO
  • Publication number: 20130264606
    Abstract: The problems addressed by the present invention lies in providing a Group III nitride semiconductor substrate having a principal plane on which high-quality crystals can be grown and also providing a method for producing a Group III nitride semiconductor substrate capable of obtaining a crystal which has few stacking faults and in which stacking faults in directions parallel to the polar plane in particular have been greatly suppressed. The problem is solved by means of a Group III nitride semiconductor substrate having a plane other than a C plane as a principal plane, wherein a ratio (W1/W2) of a tilt angle distribution W1 of the principal plane in the direction of a line of intersection between the principal plane and the C plane to a tilt angle distribution W2 of the principal plane in a direction orthogonal to the line of intersection is less than 1.
    Type: Application
    Filed: June 3, 2013
    Publication date: October 10, 2013
    Inventors: Shuichi KUBO, Hirotaka Ikeda, Hirohisa Itoh, Shinjiro Kadono
  • Publication number: 20110293202
    Abstract: It is aimed to provide a spout member and a packaging bag using the spout member which have excellent handling property and hygiene management performance at the time of supplying water or the like from the outside before and during use such as administration of water and medicine, in which a closure means for freely opening and closing an aperture formed by cutting off parts of peripheral portions of sealed film pieces is protected from a contained content at the time of storage or transportation and which have excellent protecting property even when an inner pressure acts in the packaging bag, excellent contamination preventing property until a spout is opened and excellent contamination preventing property and handling property after opening.
    Type: Application
    Filed: September 1, 2009
    Publication date: December 1, 2011
    Applicants: FUJIMORI KOGYO CO., LTD., MORINAGA MILK INDUSTRY CO., LTD.
    Inventors: Yasuhiro Takeda, Kenji Washida, Takahiro Koyama, Tetsushi Mori, Yasuharu Takada, Moritoshi Oguni, Hirotaka Ikeda, Toshihiko Mori, Matsutarou Ono