Abstract: A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

Abstract: A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

Abstract: A method for fabricating a bonded SOI wafer is provided in which no void is produced during a waiting period from the completion of a bonding step to the start of a bonding thermal processing step without a special restriction. The method for fabricating a bonded SOI wafer includes a bonding step in which an active wafer, which has been single- or both-side mirror polished and thermal oxidation processed to form an insulating layer of a predetermined thickness, is pressed and bonded to a single- or both-side mirror polished base wafer; and a bonding thermal processing step for carrying out a bonding thermal processing for bonding the wafer, in which a hydrophobic processing step for the base wafer and a hydrophilic processing step for the active wafer are carried out before the bonding step.