Abstract: A substrate processing apparatus includes: a processing chamber; a substrate holder that is disposed in the processing chamber and holds a substrate; a processing liquid supply that supplies a processing liquid to the substrate held in the substrate holder; an infrared camera that acquires an infrared image of the processing chamber; and a controller that detects at least a state of the processing liquid based on the infrared image and monitors presence/absence of an abnormality.

Abstract: An image restoration device includes an acquisition processing unit configured to acquire a captured image obtained by an imaging unit capturing surroundings of a vehicle, and a restoration processing unit. In a case where the captured image includes a stained area caused by a stain of an optical system of the imaging unit, the restoration processing unit is configured to output a restored image corresponding to the captured image acquired by the acquisition processing unit based on a restoration model pre-trained by a machine learning method to output the restored image serving as the captured image in response to an input of the captured image, the restored image in which the stained area is reduced in a different degree in accordance with a position of the stained area in the captured image.

Abstract: A substrate processing apparatus includes: a processing chamber; a substrate holder that is disposed in the processing chamber and holds a substrate; a processing liquid supply that supplies a processing liquid to the substrate held in the substrate holder; an infrared camera that acquires an infrared image of the processing chamber; and a controller that detects at least a state of the processing liquid based on the infrared image and monitors presence/absence of an abnormality.

Abstract: In drying a substrate disposed inside a processing container after performing a liquid processing on the substrate, a low humidity gas for lowering a humidity inside the processing container is supplied during a time period when a processing liquid is supplied to the center portion of the substrate, and the processing liquid supplied to the center portion of the substrate is stopped after a humidity measurement value obtained by measuring the humidity inside the processing container becomes equal to or less than a preset humidity target value.

Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.

Abstract: A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.

Abstract: In drying a substrate disposed inside a processing container after performing a liquid processing on the substrate, a low humidity gas for lowering a humidity inside the processing container is supplied during a time period when a processing liquid is supplied to the center portion of the substrate, and the processing liquid supplied to the center portion of the substrate is stopped after a humidity measurement value obtained by measuring the humidity inside the processing container becomes equal to or less than a preset humidity target value.

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract: A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.

Abstract: Provided is a liquid processing apparatus that selectively supplies processing liquids with a switching operation to the surface of a substrate to perform a liquid processing. The liquid processing apparatus includes a first processing liquid supply unit including a first nozzle block that selectively supplies an acidic chemical liquid and a rinse liquid, and a second processing liquid supply unit including a second nozzle block that selectively supplies an alkaline chemical liquid and a rinse liquid. When a chemical liquid is supplied to the substrate from one of the first and second nozzle blocks, the other of the first and second nozzle blocks is retreated to a retreat position. When the rinse liquid is supplied to the substrate from one of the first and second nozzle blocks, the other of the first and second nozzle blocks is moved to a processing position.

Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.

Abstract: An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method in which a substrate is processed by a processing liquid in the form of liquid droplets. The liquid processing apparatus includes: a first processing liquid ejecting unit configured to eject a first processing liquid in a form of liquid droplets which contains pure water toward the surface of the substrate; and a second processing liquid ejecting unit configured to eject a second processing liquid as a continuous liquid stream toward the surface of the substrate processed by the first processing liquid in the form of the liquid droplets. The second processing liquid inverts a zeta potential on the surface of the substrate into a negative zeta potential.

Abstract: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract: Provided is a liquid processing apparatus that selectively supplies processing liquids with a switching operation to the surface of a substrate to perform a liquid processing. The liquid processing apparatus includes a first processing liquid supply unit including a first nozzle block that selectively supplies an acidic chemical liquid and a rinse liquid, and a second processing liquid supply unit including a second nozzle block that selectively supplies an alkaline chemical liquid and a rinse liquid. When a chemical liquid is supplied to the substrate from one of the first and second nozzle blocks, the other of the first and second nozzle blocks is retreated to a retreat position. When the rinse liquid is supplied to the substrate from one of the first and second nozzle blocks, the other of the first and second nozzle blocks is moved to a processing position.

Abstract: Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.

Abstract: A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

Abstract: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

Abstract: Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.