Abstract: Color image sensors and systems are provided. A color image sensor as disclosed includes a plurality of pixels disposed within an array, each of which includes a plurality of sub-pixels. A pixel array includes pixel cells, each pixel cell including one or more photodiodes. Pixel cells are arranged in rows and columns. The pixel array includes transistors for vertical binning of pixel cells in different rows and transistors for horizontal binning of pixel cells in different columns.

Abstract: An imaging device includes a controller, a power supply, a regulator, and a switch. The controller is configured to control an imaging unit, on the basis of a command and data that are received from a host in accordance with an I2C/I3C communication protocol. The power supply is configured to supply a voltage to a digital block of the controller. The digital block is configured to be subjected to dynamic voltage frequency scaling within one-frame operation. The regulator and the switch are provided between the digital block and the power supply, and coupled in parallel with each other.

Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

Abstract: A solid-state image capturing element includes a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction and a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction. The element includes a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

Abstract: An imaging device includes a controller, a power supply, a regulator, and a switch. The controller is configured to control an imaging unit, on the basis of a command and data that are received from a host in accordance with an I2C/I3C communication protocol. The power supply is configured to supply a voltage to a digital block of the controller. The digital block is configured to be subjected to dynamic voltage frequency scaling within one-frame operation. The regulator and the switch are provided between the digital block and the power supply, and coupled in parallel with each other.

Abstract: An acquisition unit that acquires vehicle information related to a vehicle state of a vehicle; a determination unit that determines whether the vehicle has traveled in a state in which energy consumption efficiency of the vehicle is poor within a predetermined time from a predetermined driving operation of the vehicle based on the vehicle information acquired by the acquisition unit; and a display control unit that causes a display unit to display the number of times of traveling in the state per unit time within the predetermined time from the predetermined driving operation, the traveling being determined by the determination unit, are included.

Abstract: An image sensor and pixel circuit therefor includes a photoelectric conversion device; an amplifier including a first input terminal connected to the photoelectric conversion device, and an output terminal; a capacitor disposed between the first input terminal and the output terminal; and a reset switch network disposed between the first input terminal and the output terminal in parallel with the capacitor, the reset switch network including at least a first reset transistor, a second reset transistor, and a third reset transistor.

Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

Abstract: An image sensor and pixel circuit therefor includes a photoelectric conversion device; an amplifier including a first input terminal connected to the photoelectric conversion device, and an output terminal; a capacitor disposed between the first input terminal and the output terminal; and a reset switch network disposed between the first input terminal and the output terminal in parallel with the capacitor, the reset switch network including at least a first reset transistor, a second reset transistor, and a third reset transistor.

Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a guided mode resonance (“GMR”) filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. In some cases, the imaging device is a back-side-illuminated or front-side-illuminated CMOS or CCD image sensor.

Abstract: A solid-state image capturing element includes: a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction; a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction; a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or N front-side-illuminated CMOS image sensor.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device comprises a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device comprises a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: Solid-state imaging devices and electronic apparatuses are provided. More particularly, a solid-state imaging device that includes first and second substrates are provided. The first and second substrates are stacked on top of one another. The first substrate includes a pixel array and a peripheral circuit. The second substrate also includes a peripheral circuit. The device can be configured such that all resistors are formed in the second substrate, with no resistors being formed in the first substrate. Alternatively, the device can be configured such that all capacitors are formed in the second substrate, with no capacitors being formed in the first substrate. As yet another alternative, the second substrate can be configured such that it contains all resistors and capacitors of the peripheral circuits, with no resistors or capacitors being formed in the peripheral circuit of the first substrate.

Abstract: A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.

Abstract: The present invention provides a photocatalyst structure capable of improving catalyst efficiency dramatically and stably. In the present invention, the photocatalyst structure is comprised of a metal nanoparticle, a semiconductor photocatalyst, and a material intervening between the metal nanoparticle and the semiconductor photocatalyst. The material is transparent to a light of a wavelength which excites the semiconductor photocatalyst.

Abstract: Although there has been described what is the present embodiment of the invention, it will be understood by persons skilled in the art that variations and modifications may be made thereto without departing from the spirit and scope of the invention set forth in the appended claims.