Abstract: In an IGBT module which contains an IGBT device and a diode device connected to each other and accommodated in a case and which radiates heat generated in operation through a radiation board, an object is to reduce the area of the module in the lateral direction to achieve size reduction. The collector electrode surface of an IGBT device is provided on a radiation board, and an element connecting conductor is bonded with conductive resin on the emitter electrode surface. The anode electrode surface of a diode device is bonded on it with the conductive resin. The IGBT device and the diode device are thus stacked and connected in the vertical direction.

Abstract: An optical submarine communication system has a land cable connected to a terminal apparatus which is installed on land near the seashore for transmitting an optical signal and electric power. The land cable is connected to an optical submarine cable through a beach manhole, and a repeater is connected to the optical submarine cable. The optical submarine communication system has a surge suppressor provided on the land cable, whereby a surge generated from the terminal apparatus side because of a lightning stroke or an insulation failure is suppressed from reaching and damaging the repeater.

Abstract: In an IGBT module which contains an IGBT device and a diode device connected to each other and accommodated in a case and which radiates heat generated in operation through a radiation board, an object is to reduce the area of the module in the lateral direction to achieve size reduction. The collector electrode (32) surface of an IGBT device (28) is provided on a radiation board (26), and an element connecting conductor (35) is bonded with conductive resin (36) on the emitter electrode (30) surface. The anode electrode (33) surface of a diode device (29) is bonded on it with the conductive resin (36). The IGBT device (28) and the diode device (29) are thus stacked and connected in the vertical direction.

Abstract: A current detecting sensor includes parallel flat plates opposed in a substantially U-shape in cross-section. Since the flat plates are opposed to each other, the current detecting sensor has reduced inductance, significantly decreasing frequency dependency of outputs from detection terminals.

Abstract: An object is to obtain long-term reliability of an electric connection in a power semiconductor module. In a power semiconductor module, the main circuit interconnection directly connected to a power semiconductor chip (3) is formed of a busbar (6) and the power semiconductor chip (3) and the busbar electrode (6a) of the busbar (6) are electrically connected through a conductive resin (12). A member (13) having lower thermal expansion than the busbar electrode (6a) is joined to the busbar electrode (6a) in the part adjacent to said power semiconductor chip (3).

Abstract: A circuit board includes an insulating substrate having opposed first and second surfaces and a thickness; and first and second conductive layers disposed on the first and second surfaces of the insulating substrate, respectively, wherein the first conductive layer has an end surface projecting outwardly from the first conductive layer in a direction generally parallel to the first surface of the insulating substrate, and a contact surface in contact with the insulating substrate and joining the end surface at a junction, wherein the end surface is spaced from the first surface of the insulating substrate except at the junction.

Abstract: An ion implanter has a sample table on which a sample is placed, and means for injecting ions into the sample by applying an ion beam to the sample on the sample table. The ion implanter has magnetic field applying means for generating radial magnetic fields on the surface of the sample from near the center of the sample to outside of the outer periphery of the sample. The secondary electrons generated when the ion beam irradiates the sample table or the sample, including the secondary electrons generated from the sample table near the outer periphery of the sample, are trapped in the magnetic fields and transferred to the central portion of the sample. The secondary electrons are attracted by the electrostatic charge of the ions injected to the surface of the sample and recombine with the ions. Consequently, the electrostatic charge on the surface of the sample is decreased, preventing generation of device defects caused by electrostatic discharge damage.