Patents by Inventor Hirotaka Ohta

Hirotaka Ohta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6744074
    Abstract: Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
    Type: Grant
    Filed: October 3, 2001
    Date of Patent: June 1, 2004
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hideyoshi Horie, Hirotaka Ohta, Toshinari Fujimori
  • Patent number: 6677618
    Abstract: Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element.
    Type: Grant
    Filed: December 3, 1999
    Date of Patent: January 13, 2004
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hideyoshi Horie, Hirotaka Ohta, Toshinari Fujimori
  • Publication number: 20020020847
    Abstract: Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
    Type: Application
    Filed: October 3, 2001
    Publication date: February 21, 2002
    Applicant: MITSUBISHU CHEMICAL CORPORATION
    Inventors: Hideyoshi Horie, Hirotaka Ohta, Toshinari Fujimori
  • Patent number: 6323052
    Abstract: Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
    Type: Grant
    Filed: June 11, 1998
    Date of Patent: November 27, 2001
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hideyoshi Horie, Hirotaka Ohta, Toshinari Fujimori
  • Patent number: 5352450
    Abstract: A method for preparing a vaccine for dental caries comprises the step of culturing a variant which is obtained by integrating a protein antigen (PAc)-expressing gene into the chromosomal gene of a Streptococcus mutans GS-5 strain to obtain the protein antigen, the protein antigen being produced on the surface of cells of oral Streptococcus mutans or it being extracellularly produced by the microorganism and having a molecular weight ranging from about 170,000 to 220,000. Streptococcus mutans GS-5 (K-3), in which a protein antigen-expressing gene is integrated into the chromosomal gene thereof, has an ability of producing the protein antigen on the surface of the cells or extracellularly. A preventive vaccine composition for dental caries for nasal drops comprises the protein antigen thus produced by the strain: Streptcoccus mutans, the vaccine being intranasally administered. The method makes it possible to enhance the yield of PAc and to simplify processes for purifying PAc.
    Type: Grant
    Filed: May 29, 1990
    Date of Patent: October 4, 1994
    Assignees: Lion Corporation, National Institute of Health
    Inventors: Toshihiko Koga, Nobuo Okahashi, Ichiro Takahashi, Koji Shibuya, Hirotaka Ohta