Abstract: A method for manufacturing a non-circular wound magnetic core composed of a nano-crystallized soft magnetic alloy thin strip comprises: a step for acquiring a multilayer body by winding a soft magnetic alloy thin strip; a step for nano-crystallizing the soft magnetic alloy thin strip by inserting a heat treatment inner peripheral jig to the inner peripheral side of the multilayer body, maintaining the multilayer body in a non-circular shape, and subjecting the multilayer body to a heat treatment; and a step for maintaining the nano-crystallized multilayer body in the non-circular shape by using outer and inner peripheral jigs and impregnating resin between the layers of the multilayer body. The resin impregnation inner and outer peripheral jigs are shaped so as to not contact the inner peripheral surface and/or the outer peripheral surface of the multilayer body at a part where the multilayer body has a large degree of curvature.

Abstract: A method for manufacturing a non-circular wound magnetic core composed of a nano-crystallized soft magnetic alloy thin strip comprises: a step for acquiring a multilayer body by winding a soft magnetic alloy thin strip; a step for nano-crystallizing the soft magnetic alloy thin strip by inserting a heat treatment inner peripheral jig to the inner peripheral side of the multilayer body, maintaining the multilayer body in a non-circular shape, and subjecting the multilayer body to a heat treatment; and a step for maintaining the nano-crystallized multilayer body in the non-circular shape by using outer and inner peripheral jigs and impregnating resin between the layers of the multilayer body. The resin impregnation inner and outer peripheral jigs are shaped so as to not contact the inner peripheral surface and/or the outer peripheral surface of the multilayer body at a part where the multilayer body has a large degree of curvature.

Abstract: An electronic device comprising a laminate comprising pluralities of insulator layers each provided with conductor patterns, and an amplifier-constituting semiconductor device mounted to a mounting electrode formed on an upper surface of the laminate, a first ground electrode being formed on an insulator layer near an upper surface of the laminate; a second ground electrode being formed on an insulator layer near a lower surface of the laminate; the first ground electrode being connected to the mounting electrode through pluralities of via-holes; conductor patterns constituting the first circuit block being disposed in a region below the amplifier-constituting semiconductor device between the first ground electrode and the second ground electrode; and at least part of a conductor pattern for a line connecting the first circuit block to the amplifier-constituting semiconductor device being disposed on an insulator layer sandwiched by the mounting electrode and the first ground electrode.

Abstract: The present invention provides a high frequency circuit, a high frequency circuit component, and a communication apparatus that uses the same, the circuit capable of being used for different communication systems, having a high receiving sensitivity and restraining the loss of transmission power. A high frequency circuit of the present invention includes: a first antenna terminal (ANT1) and a second antenna terminal (ANT2); and at least a transmitting terminal (Tx) and a first and a second receiving terminal (Rx1, Rx2) for a first communication system. With each switch, the first and the second receiving terminals (Rx1, Rx2) can be each simultaneously connected to the first and the second antenna terminals (ANT1, ANT2). Also, the transmitting terminal (Tx) is selectively connectable to either of the first and second antenna terminals (ANT1, ANT2).

Abstract: An electronic device comprising a laminate constituted by pluralities of insulation layers on which conductor patterns are formed; ground electrodes being formed on an upper-surface-side insulation layer and a bottom-surface-side insulation layer in the laminate; the laminate being partitioned to first and second regions by a first shield constituted by a line of via-holes electrically connecting the upper-surface-side ground electrode to the bottom-surface-side ground electrode; conductor patterns constituting a first filter for a first frequency band and conductor patterns constituting a first balun for the first frequency band being arranged in the first and second regions, respectively; pluralities of terminal electrodes being formed on bottom or side surfaces of the laminate; one of terminal electrodes of the first filter, which acts as an unbalanced port, being adjacent to a terminal electrode of the first balun, which acts as an unbalanced port, with no other terminal electrode than a ground electrode

Abstract: A high-frequency circuit comprising a switch circuit connected to an antenna terminal, first and second diplexer circuits connected to the switch circuit, first and second power amplifier circuits connected to the first diplexer circuit, first and second bandpass filter circuits connected to the first and second power amplifier circuits, a third bandpass filter circuit connected to the second diplexer circuit, a detection circuit disposed between the switch circuit and the first diplexer circuit, and a low-noise amplifier circuit disposed between the switch circuit and the second diplexer circuit.

Abstract: An electronic device comprising a laminate comprising pluralities of insulator layers each provided with conductor patterns, and an amplifier-constituting semiconductor device mounted to a mounting electrode formed on an upper surface of the laminate, a first ground electrode being formed on an insulator layer near an upper surface of the laminate; a second ground electrode being formed on an insulator layer near a lower surface of the laminate; the first ground electrode being connected to the mounting electrode through pluralities of via-holes; conductor patterns constituting the first circuit block being disposed in a region below the amplifier-constituting semiconductor device between the first ground electrode and the second ground electrode; and at least part of a conductor pattern for a line connecting the first circuit block to the amplifier-constituting semiconductor device being disposed on an insulator layer sandwiched by the mounting electrode and the first ground electrode.

Abstract: An electronic device comprising a laminate constituted by pluralities of insulation layers on which conductor patterns are formed; ground electrodes being formed on an upper-surface-side insulation layer and a bottom-surface-side insulation layer in the laminate; the laminate being partitioned to first and second regions by a first shield constituted by a line of via-holes electrically connecting the upper-surface-side ground electrode to the bottom-surface-side ground electrode; conductor patterns constituting a first filter for a first frequency band and conductor patterns constituting a first balun for the first frequency band being arranged in the first and second regions, respectively; pluralities of terminal electrodes being formed on bottom or side surfaces of the laminate; one of terminal electrodes of the first filter, which acts as an unbalanced port, being adjacent to a terminal electrode of the first balun, which acts as an unbalanced port, with no other terminal electrode than a ground electrode

Abstract: The present invention provides a high frequency circuit, a high frequency circuit component, and a communication apparatus that uses the same, the circuit capable of being used for different communication systems, having a high receiving sensitivity and restraining the loss of transmission power. A high frequency circuit of the present invention includes: a first antenna terminal (ANT1) and a second antenna terminal (ANT2); and at least a transmitting terminal (Tx) and a first and a second receiving terminal (Rx1, Rx2) for a first communication system. With each switch, the first and the second receiving terminals (Rx1, Rx2) can be each simultaneously connected to the first and the second antenna terminals (ANT1, ANT2). Also, the transmitting terminal (Tx) is selectively connectable to either of the first and second antenna terminals (ANT1, ANT2).

Abstract: A high-frequency circuit comprising a switch circuit connected to an antenna terminal, first and second diplexer circuits connected to the switch circuit, first and second power amplifier circuits connected to the first diplexer circuit, first and second bandpass filter circuits connected to the first and second power amplifier circuits, a third bandpass filter circuit connected to the second diplexer circuit, a detection circuit disposed between the switch circuit and the first diplexer circuit, and a low-noise amplifier circuit disposed between the switch circuit and the second diplexer circuit.