Abstract: Proposed is a phase shift introduction method, a structure, and a circuit device for eliminating or minimizing a risk associated with dissimilar materials, solving in principle a problem of mixing of a signal current and a control current that occurs due to DC connection of a phase shifter to a signal line, and stably and reliably providing a phase shift that is desired to be introduced without being adversely effected by noise generated by an ambient magnetic field, which is generated due to use of an external power supply. A structure according to the present invention includes a phase shifter 101 and a closed-loop circuit 103 that is directly used for computation or storage, and a quantum phase shift is generated in the closed-loop circuit 103 by using a fractional flux quantum captured by the phase shifter 101 that is DC-separated from the closed-loop circuit 103.

Abstract: A programmable voltage standard element which consists of Josephson junction arrays having Josephson junction devices which are connected in series generates constant voltage by impression of bias current and microwave. The voltage standard element has bias current terminals each of which is provided for a respective section comprising a Josephson junction devices of in-series connection that are divided by the number of the nth power of 3. A bias current supply circuit independently impresses bias current of a predetermined value to a bias current terminal for every section. A controlling circuit controls a bias current supply circuit to impress bias current of a predetermined value to a Josephson junction array of each section and control impression of microwave.

Abstract: A programmable voltage standard element which consists of Josephson junction arrays having Josephson junction devices which are connected in series generates constant voltage by impression of bias current and microwave.

Abstract: A Josephson junction comprises electrodes and intermediate layer provided between the electrodes wherein the electrodes and the intermediate layer are made of the same material but have different conductive states, a superconductor and a usual state conductor which are produced by changing a composition ratio of niobium of a niobium nitride thin film, and nitrogen, by controlling the quantity of nitrogen gas at the time of thin film creation.