Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Abstract: There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.

Abstract: There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.

Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

Abstract: A method of processing a substrate, includes: (a) modifying a surface of the substrate into a first oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a first processing gas in which oxygen and hydrogen are contained and a ratio of hydrogen in the oxygen and hydrogen of the first processing gas is a first ratio; and (b) modifying the first oxide layer into a second oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a second processing gas in which oxygen is contained and hydrogen is optionally contained and a ratio of hydrogen in the oxygen and hydrogen of the second processing gas is a second ratio smaller than the first ratio.

Abstract: There is provided a technique that includes a process container including a cylindrical portion, a process chamber being formed in the process container and a substrate being arranged in the process chamber; a gas supplier configured to supply a processing gas to the process chamber; an electrode installed in a spiral shape to surround the process container from outside of the cylindrical portion of the process container and supplied with high-frequency power to plasma-excite the processing gas; and a mover configured to be capable of moving the electrode with respect to the process container in a radial direction of the cylindrical portion.

Abstract: A method of manufacturing a semiconductor device includes: (a) generating a reactive species by plasma-exciting a process gas containing oxygen and hydrogen; and (b) supplying the reactive species to a substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate, wherein a ratio of oxygen and hydrogen contained in the process gas is adjusted such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (b) becomes a predetermined thickness ratio.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device, including: (a) loading a substrate with a film formed on a surface thereof into a process vessel; (b) generating a reactive species containing oxygen and a reactive species of a rare gas by converting a mixed gas containing the rare gas and an oxygen-containing gas into a plasma state; and (c) oxidizing the film by supplying the reactive species containing oxygen to the substrate together with the reactive species of the rare gas. In (b), a partial pressure ratio PN/PT, which is a ratio of a partial pressure PN of the rare gas in the process vessel to a total pressure PT of the mixed gas in the process vessel, is set to a value of 0.4 or less.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying a surface of a substrate into an impurity-containing layer by performing: (a) supplying an impurity-containing gas containing an impurity and a dilution gas into a process chamber in which the substrate is accommodated; (b) plasma-exciting the impurity-containing gas and the dilution gas; and (c) supplying an active species containing the impurity generated by plasma-exciting the impurity-containing gas and the dilution gas to the substrate, wherein a flow rate ratio of the impurity-containing gas to the dilution gas is controlled in (a) such that a partial pressure of the impurity-containing gas in the process chamber is set to a predetermined partial pressure less than a partial pressure at which the impurity-containing gas forms deposits containing a polymer in the process chamber.

Abstract: A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) providing a semiconductor processing apparatus including a substrate process chamber, a coil and a substrate support; (b) placing a target substrate with a concave structure of a silicon film on a substrate support, wherein a deteriorated layer is formed on an inner surface of the concave structure by deterioration of a surface layer of the silicon film due to an etching process; (c) supplying an oxygen-containing gas into the substrate process chamber; (d) applying a high frequency power to the coil to generate plasma of the oxygen-containing gas; and (e) oxidizing, by the plasma, a surface of the silicon film exposed in the concave structure wherein the deteriorated layer is formed on the surface.

Abstract: Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, including: (a) preparing a substrate including a silicon oxide film and a polysilicon film formed on the silicon oxide film, wherein the polysilicon film includes a contact surface contacting the silicon oxide film and an exposed surface facing the contact surface; and (b) supplying a reactive species generated by plasma excitation of a gas containing hydrogen and oxygen to the exposed surface of the polysilicon film.

Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Abstract: Described herein is a technique capable of improving electrical characteristics of a semiconductor device. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) generating oxygen and hydrogen active species; and (b) forming an oxide layer by supplying the oxygen and hydrogen active species to a substrate with a concave structure to subject a film on an inner surface of the concave structure to oxidation, wherein the oxide layer is formed in (b) such that a thickness of the oxide layer is greater on the inner surface than at an upper end portion of the concave structure by setting a ratio of a flow rate of the hydrogen active species to a total flow rate to a predetermined ratio greater than a first ratio at which a rate of forming the oxide layer is maximized at the upper end portion of the concave structure.

Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

Abstract: Described herein is a technique capable of improving electrical characteristics of a semiconductor device. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) generating oxygen and hydrogen active species; and (b) forming an oxide layer by supplying the oxygen and hydrogen active species to a substrate with a concave structure to subject a film on an inner surface of the concave structure to oxidation, wherein the oxide layer is formed in (b) such that a thickness of the oxide layer is greater on the inner surface than at an upper end portion of the concave structure by setting a ratio of a flow rate of the hydrogen active species to a total flow rate to a predetermined ratio greater than a first ratio at which a rate of forming the oxide layer is maximized at the upper end portion of the concave structure.