Abstract: A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin are provided. The compounds and materials can provide for high solubility in a safe solvent.

Abstract: To provide a compound which is high in sensitivity and which provides high resolution and high flatness. A compound represented by the following formula (P-0): wherein Ar is a group having an aryl group having 6 to 60 carbon atoms, each ORTS is independently a hydroxy group or a group having a specified ion moiety, and n1 is an integer of 1 to 20, provided that at least one ORTS is a group having a specified ion moiety.

Abstract: The present invention provides a resist composition comprising one or more tannin compounds selected from the group consisting of a tannin comprising at least one acid dissociation reactive group in the structure and a derivative thereof, and a resin obtained using the tannin or the derivative as a monomer, and a pattern formation method using the same, a compound and a resin.

Abstract: A composition for lithography, comprising a compound represented by following formula (1): [LxTe(OR1)y]??(1) wherein L represents a ligand other than OR1; R1 represents any one of a hydrogen atom, a substituted or unsubstituted, linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x represents an integer of 0 to 6; y represents an integer of 0 to 6; a total of x and y represents 1 to 6; when x represents 2 or more, a plurality of L may be the same or different from each other, and when y represents 2 or more, a plurality of R1 may be the same or different from each other.

Abstract: A resist composition comprising one or more tannin compounds selected from the group consisting of a tannin comprising at least one crosslinking reactive group in the structure and a derivative thereof, and a resin obtained using the tannin or the derivative as a monomer.

Abstract: Provided is a hyperbranched polymer having such a backbone that is readily decomposable by an acid. The hyperbranched polymer is derived from, via reaction, monomers including a monomer (X) and a monomer (Y). The monomer (X) contains three or more hydroxy groups per molecule. The monomer (Y) contains two or more groups represented by General Formula (y) per molecule. The monomer (X) includes at least one compound selected from the group consisting of cyclodextrins, compounds represented by General Formula (I), pillararenes, compounds represented by General Formula (II), compounds represented by General Formula (III), and compounds represented by General Formula (IV). The monomer (Y) includes a compound represented by General Formula (1).

Abstract: A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin.

Abstract: Provided is a hyperbranched polymer having such a backbone that is readily decomposable by an acid. The hyperbranched polymer is derived from, via reaction, monomers including a monomer (X) and a monomer (Y). The monomer (X) contains three or more hydroxy groups per molecule. The monomer (Y) contains two or more groups represented by General Formula (y) per molecule. The monomer (X) includes at least one compound selected from the group consisting of cyclodextrins, compounds represented by General Formula (I), pillararenes, compounds represented by General Formula (II), compounds represented by General Formula (III), and compounds represented by General Formula (IV). The monomer (Y) includes a compound represented by General Formula (1).

Abstract: A polymer compound including a unit structure represented by the general formula (1): wherein m1 and m2 each equal 1 to 8, n1 and n2 each equal 0 to 7, m1+n1 and m2+n2 each equal 4 to 8, y represents 0 to 2, R1 represents a hydroxy group; a substituted or unsubstituted straight, branched or cyclic alkyl group; a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, R2 represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, R5 represents a hydroxy group, —O—R2—O—* or —O—R2—O—R55, and R6 represents a hydroxy group or —O—R2—O—*.

Abstract: A polymer compound including a unit structure represented by the following general formula (1): wherein m1 equals 1 to 8, n1 equals 0 to 7, m1+n1 equals 4 to 8, m2 equals 1 to 8, n2 equals 0 to 7, m2+n2 equals 4 to 8, m1 equals m2, y represents 0 to 2, R1 represents a hydroxy group, a substituted or unsubstituted straight, branched or cyclic alkyl group, a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, each R2 independently represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, and R5 represents a hydroxy group or —O—R2—O—*.