Patents by Inventor Hiroto Ohori

Hiroto Ohori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170025354
    Abstract: An integrated circuit connection structure includes a contact plug extending vertically in a first dielectric, a conductive line formed of a metal extending horizontally in the first dielectric, and a contact plug extension that extends between a top surface of the contact plug and the conductive line. The plug extension is formed of the metal, has a bottom surface that lies in contact with the top surface of the contact plug, and is bounded on at least one side by a portion of a second dielectric material.
    Type: Application
    Filed: July 24, 2015
    Publication date: January 26, 2017
    Inventors: Shunsuke Watanabe, Kiyokazu Shishido, Yuji Takahashi, Takuya Futase, Eiichi Fujikura, Noritaka Fukuo, Hiroto Ohori, Kotaro Jinnouchi, Hiroki Asano
  • Patent number: 9524904
    Abstract: Dummy bit lines of are formed in a sacrificial layer at locations where bit lines are to be formed, with bit lines separated by trenches that extend through the sacrificial layer. Enclosed air gap structures are formed in the trenches between the dummy bit lines. Subsequently, the dummy bit lines are replaced with metal to form bit lines.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: December 20, 2016
    Assignee: SanDisk Technologies LLC
    Inventors: Hiroto Ohori, Takuya Futase, Yuji Takahashi, Toshiyuki Sega, Kiyokazu Shishido, Kotaro Jinnouchi, Noritaka Fukuo
  • Patent number: 9478461
    Abstract: Wide and narrow mandrels that are used to form sidewall spacers for patterning are formed in a sacrificial layer with openings in wide mandrels near sides of the wide mandrels. Sidewall spacers are formed on the sides of mandrels and the sacrificial layer is removed. The sidewall spacers are then used for patterning of underlying layers.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: October 25, 2016
    Assignee: SanDisk Technologies LLC
    Inventors: Kiyokazu Shishido, Takuya Futase, Hiroto Ohori, Kotaro Jinnouchi, Noritaka Fukuo, Yuji Takahashi, Fumiaki Toyama
  • Publication number: 20160111326
    Abstract: Dummy bit lines of are formed in a sacrificial layer at locations where bit lines are to be formed, with bit lines separated by trenches that extend through the sacrificial layer. Enclosed air gap structures are formed in the trenches between the dummy bit lines. Subsequently, the dummy bit lines are replaced with metal to form bit lines.
    Type: Application
    Filed: October 21, 2014
    Publication date: April 21, 2016
    Inventors: Hiroto Ohori, Takuya Futase, Yuji Takahashi, Toshiyuki Sega, Kiyokazu Shishido, Kotaro Jinnouchi, Noritaka Fukuo
  • Publication number: 20160086848
    Abstract: Wide and narrow mandrels that are used to form sidewall spacers for patterning are formed in a sacrificial layer with openings in wide mandrels near sides of the wide mandrels. Sidewall spacers are formed on the sides of mandrels and the sacrificial layer is removed. The sidewall spacers are then used for patterning of underlying layers.
    Type: Application
    Filed: September 24, 2014
    Publication date: March 24, 2016
    Inventors: Kiyokazu Shishido, Takuya Futase, Hiroto Ohori, Kotaro Jinnouchi, Noritaka Fukuo, Yuji Takahashi, Fumiaki Toyama