Abstract: A terahertz wave detecting device which includes a substrate and a plurality of detection elements arranged above the substrate, wherein the detection element includes a first metal layer that is provided on the substrate, a support substrate that is provided to be spaced from the first metal layer, an absorbing section that is provided above the support substrate and which absorbs a terahertz wave to generate heat, and a converting section that includes a second metal layer, a pyroelectric layer, and a third metal layer layered on the absorbing section, and which converts the heat generated in the absorbing section into an electric signal.

Abstract: A terahertz wave detecting device includes: a substrate; and a plurality of detection elements that is arranged above the substrate, wherein the detection element includes a first metal layer that is provided on the substrate, an absorbing section that is provided to be spaced from the first metal layer and absorbs a terahertz wave to generate heat, and a converting section that includes a second metal layer, a pyroelectric layer and a third metal layer layered on the absorbing section on a side opposite to the first metal layer, and converts the heat generated in the absorbing section into an electric signal.

Abstract: A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes first and second conductive layers, a semiconductor layer, and first and second electrodes. The semiconductor layer is made of a semiconductor material having a carrier density that is lower than a carrier density of the semiconductor material of the first conductive layer or the second conductive layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. The semiconductor layer includes an incidence surface through which the pulsed light enters the semiconductor layer, and an emission surface from which the terahertz waves are emitted. The incidence surface is positioned in a side surface of the semiconductor layer having a normal direction extending orthogonal to a lamination direction, and the emission surface is positioned in the side surface at a position different from the incidence surface.

Abstract: A terahertz wave generating device includes a first light source, a second light source and an antenna. The first light source and a second light source are configured and arranged to generate pulsed lights. The antenna is configured and arranged to generate terahertz waves when irradiated by the pulsed lights generated by the first light source and the second light source. The antenna has a pair of electrodes arranged opposite each other with a gap being formed therebetween. The first light source and the second light source are configured and arranged to irradiate the pulsed lights between the electrodes at timings that are offset from each other.

Abstract: A terahertz wave detecting device includes a wavelength filter and a detection part. The wavelength filter is configured to convert terahertz waves to heat. The detection part is configured to detect the heat converted by the wavelength filter. The wavelength filter includes a wavelength selection layer and a terahertz wave absorption layer. The wavelength selection layer is configured to transmit terahertz waves of a prescribed wavelength among the terahertz waves. The terahertz wave absorption layer is provided in contact with the wavelength selection layer and the detection part, and contains a material for absorbing the terahertz waves of the prescribed wavelength.

Abstract: A terahertz wave detection device which includes an absorption portion which absorbs a terahertz wave and generates heat and a conversion portion which converts the heat generated by the absorption portion into an electric signal, wherein the absorption portion includes a dielectric layer, a plurality of metal structures which are provided on one surface of the dielectric layer and are arranged to be separated from one another by an interval having a predetermined length; and a metal layer which is provided on the other surface of the dielectric layer, and wherein the interval is shorter than a wavelength of the terahertz wave which is absorbed by the absorption portion.

Abstract: A specimen inspection apparatus includes: a terahertz wave generation unit which generates a terahertz wave; a transportation unit which includes a transportation surface on which specimens as inspection objects are loaded and is configured so as to transport the specimens in an in-plane direction of the transportation surface; an irradiation direction changing unit which changes an irradiation direction of a terahertz wave which is emitted from the terahertz wave generation unit and is emitted to the specimens loaded on the transportation surface; and a terahertz wave detection unit which detects a terahertz wave which is emitted to the specimens loaded on the transportation surface to transmit therethrough or be reflected thereby, wherein the irradiation direction changing unit changes the irradiation direction by changing a position of the terahertz wave generation unit.

Abstract: A terahertz wave generating device includes a plurality of light sources and an antenna. The light sources are configured to generate pulsed light. The antenna is configured to generate terahertz waves by being irradiated with the pulsed light generated by the light sources. The antenna has a plurality of pairs of electrodes with the electrodes in each of the pairs facing each other across a gap portion with a predetermined distance. The light sources is configured to irradiate the gap portions between the electrodes in the pairs with the pulsed light such that the gap portions between the electrodes of at least two of the pairs are irradiated with the pulsed light at mutually different timings.

Abstract: A terahertz wave generating device includes a first light source, a second light source and an antenna. The first light source and a second light source are configured and arranged to generate pulsed lights. The antenna is configured and arranged to generate terahertz waves when irradiated by the pulsed lights generated by the first light source and the second light source. The antenna has a pair of electrodes arranged opposite each other with a gap being formed therebetween. The first light source and the second light source are configured and arranged to irradiate the pulsed lights between the electrodes at timings that are offset from each other.

Abstract: A terahertz wave generating device includes a plurality of light sources and an antenna. The light sources are configured to generate pulsed light. The antenna is configured to generate terahertz waves by being irradiated with the pulsed light generated by the light sources. The antenna has a plurality of pairs of electrodes with the electrodes in each of the pairs facing each other across a gap portion with a predetermined distance. The light sources is configured to irradiate the gap portions between the electrodes in the pairs with the pulsed light such that the gap portions between the electrodes of at least two of the pairs are irradiated with the pulsed light at mutually different timings.

Abstract: A terahertz wave detection device includes a wavelength filter transmitting terahertz waves having a predetermined wavelength, and a detection portion detecting the terahertz waves having the predetermined wavelength that have passed through the wavelength filter by converting the terahertz waves into heat, wherein the wavelength filter includes a metal layer having a plurality of holes communicating with an incident surface onto which the terahertz waves are incident and an emission surface from which the terahertz waves having the predetermined wavelength are emitted, and a dielectric portion filling in the plurality of holes and made of a dielectric, wherein the plurality of holes are formed with a predetermined pitch along a direction that is perpendicular to a normal line of the incident surface.