Abstract: This invention relates to a polymer capable of forming an ultra-fine pattern with excellent rectangular shape in a silylated surface resolution process using a chemically amplified type resist composition as single layer or the most upper layer among multiple layers and to a resist composition using the polymer. The said polymer and resist composition are useful in a silylated surface resolution process, and by conducting the silylated surface resolution process using the said resist composition, contrast of silylation becomes higher and it becomes possible to obtain ultra-fine pattern regardless of the kind of exposure energy.

Abstract: A resist composition comprising (a) at least two kinds of polymers which become alkali-soluble by the action of an acid, (b) as a photoacid generator, a combination of an alkylsulfonyl diazomethane compound and a triarylsulfonium arylsulfonate compound or a diaryliodonium arylsulfonate compound, and (c) a solvent is excellent as a chemically amplified resist composition to give excellent pattern shape and very fine line-and-space, particularly when exposed to lights having a wavelength of 300 nm or less.

Abstract: This invention relates to a polymer capable of forming an ultra-fine pattern with excellent rectangular shape in a silylated surface resolution process using a chemically amplified type resist composition as single layer or the most upper layer among multiple layers and to a resist composition using the polymer.

Abstract: This invention relates to a polymer capable of forming an ultra-fine pattern with excellent rectangular shape in a silylated surface resolution process using a chemically amplified type resist composition as single layer or the most upper layer among multiple layers and to a resist composition using the polymer. The said polymer and resist composition are useful in a silylated surface resolution process, and by conducting the silylated surface resolution process using the said resist composition, contrast of silylation becomes higher and it becomes possible to obtain ultra-fine pattern regardless of the kind of exposure energy.

Abstract: A resist composition comprising an alkali-soluble polymer, a special cross-linking agent containing one or more oxirane rings and at least one of —O—, —CO—,—COO— and —OCO— groups in the molecule, a photoacid generator, and a solvent can form a film having high transmittance for deep UV light such as ArF excimer laser beams and high etching resistance as well as high resolution, and thus suitable for forming a negative working pattern.

Abstract: This invention relates to a substrate dependence reducing agent useful as the constituent of a chemical amplified type resist composition used for production of semiconductor devices, etc., which comprises a compound containing in the molecule at least one structure in which at least one of the direct links of —NH— is directly bonded to at least one member selected from the group consisting of —C(═O)—, —C(═S)— and —SO2—. When a resist composition containing said agent is used on a special substrate such as a TIN substrate or a BPSG substrate as a resist material for exposure to deep UV or KrF excimer laser beams, the resist composition can give a good profile of pattern of quarter micron order without causing footing, while retaining high resolution ability and high sensitivity.

Abstract: A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.

Abstract: A polymer composition comprising (i) a polymer (a) having a monomer unit containing a functional group A which becomes alkali-soluble by heating in the presence of an acid, (ii) a polymer (b) having a monomer unit containing a functional group B which also becomes alkali-soluble, but less easily than the functional group A, by heating in the presence of an acid, and if necessary in addition to (i) and (ii) or in place of (ii), (iii) a phenolic compound having a weight-average molecular weight of 300 to 15,000 gives together with an photoacid generator a resist material suitable for forming a pattern excellent in sensitivity, resolution, mask linearity and other properties.

Abstract: A resist composition comprising (a) a polymer having at least repeating units of the formulae: ##STR1## (b) a photoacid generator and (c) a solvent, has high sensitivity to light, excellent heat resistance, adhesiveness to a substrate and suitable for pattern formation with high resolution.

Abstract: A photoresist composition comprising (a) a difficultly alkali-soluble special resin, (b) a photo-sensitive compound capable of generating a carboxylic acid, and (c) a solvent, is effective for pattern formation using deep ultraviolet light, KrF excimer laser beams, etc.

Abstract: A resist composition comprising (a) a polymer having at least repeating units of the formulae: ##STR1## (b) a photoacid generator and (c) a solvent, has high sensitivity to light, excellent heat resistance, adhesiveness to a substrate and suitable for pattern formation with high resolution.

Abstract: A resist material comprising (a) a polymer having a monomer unit having a special functional group, a monomer unit having a phenolic hydroxyl group, and if necessary a third monomer unit, (b) a photoacid generator, and (c) a solvent can provide a resist film excellent in heat resistance and adhesiveness to a substrate when exposed to light with 300 nm or less such as deep UV light, KrF excimer laser light, etc., and is suitable for forming ultrafine patterns.

Abstract: A diazodisulfone of the formula: ##STR1## wherein R.sup.1 is a C.sub.3-8 branched or cyclic alkyl group, and R.sup.2 is a C.sub.1-8 straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.

Abstract: wherein R1 is a C3-8 branched or cyclic alkyl group, and R2 is a C1-8 straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.