Patents by Inventor Hirotoshi Ikeya

Hirotoshi Ikeya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090280424
    Abstract: Provided as toners for developing electrostatically charged images capable of preventing a sticking and curling phenomenon even with an increase in number of printed sheets and processes for producing the same, with the use of a cyclic polyolefinic resin, are a toner for developing electrostatically charged images contains a cyclic polyolefinic resin and a polar resin wherein 10 to 50 parts by weight of the polar resin is present in relation to 100 parts by weight of the cyclic polyolefinic resin, and a process for producing a toner for developing electrostatically charged images comprises a step of melt-kneading at least a cyclic polyolefinic resin and a coloring agent to obtain a kneaded product, a step of grinding the kneaded product to obtain colored particles, and a step of melt-kneading, grinding and classifying the colored particles and a polar resin to obtain the toner.
    Type: Application
    Filed: May 5, 2009
    Publication date: November 12, 2009
    Inventors: Hirotoshi Ikeya, Hiroshi Kumashiro, Nobuyuki Aoki
  • Publication number: 20090162085
    Abstract: A device for measuring electrostatic charge amount of toner is provided. The device comprises a hollow toner suction port for sucking the toner from a toner substrate and a means for measuring electrostatic charge amount of the sucked toner. The toner suction port forms a hermetically sealed space with the toner substrate.
    Type: Application
    Filed: December 18, 2008
    Publication date: June 25, 2009
    Applicant: Tomoegawa Co., Ltd.
    Inventors: Hirotoshi Ikeya, Hiroshi Kumashiro, Nobuyuki Aoki
  • Patent number: 6325905
    Abstract: A solid electrolyte type carbon dioxide gas sensor element has a solid electrolyte layer, a work electrode layer formed on one side of the solid electrolyte layer and containing an electron conducting material and an auxiliary electrode material, and a reference electrode layer formed on the same side or the other side of the solid electrolyte layer and containing an electron conducting material. The work electrode layer further contains a rare earth metal oxide or at least part of the auxiliary electrode material of the work electrode layer is a rare metal oxide carbonate.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: December 4, 2001
    Assignee: Tokuyama Corporation
    Inventors: Mitsuhiko Matsui, Hirotoshi Ikeya
  • Patent number: 5629829
    Abstract: There is proposed an electrolytic solution having a low specific resistance, a high sparking voltage and a stable sparking property. This electrolytic solution contains a quaternary ammonium salt of cyanic acid, at least one phosphorus compound selected from an organic phosphorus acid compound, phosphoric acid and salts thereof, water and an organic solvent.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: May 13, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hirotoshi Ikeya
  • Patent number: 4719502
    Abstract: An epoxy resin composition for sealing, and a resin-sealed type semiconductor device in which this composition is used, of outstanding heat cycle resistance, humidity resistance and laser marking characteristics, can be obtained by using a combination of an organic phosphine compound and a metal complex dye. The epoxy resin composition, characterized in that it consists of epoxy resin, a curing agent having at least 2 phenolic hydroxyl groups per molecule, an organic phosphine compound and a metal complex dye; and to a resin-sealed type semiconductor device characterized in that it is sealed with this composition.
    Type: Grant
    Filed: August 4, 1986
    Date of Patent: January 12, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirotoshi Ikeya, Michiya Higashi
  • Patent number: 4710796
    Abstract: A resin encapsulation type semiconductor device having a semiconductor element and a resinous encapsulating material for encapsulating said semiconductor element therein, said resinous encapsulating material comprising a cured product of an epoxy resin composition for encapsulation of semiconductor, comprising:(a) 100 parts by weight of an epoxy resin;(b) 5 to 500 parts by weight of a curing agent having at least two phenolic hydroxyl groups in one molecule;(c) 0.01 to 20 parts by weight of an organic phosphine compound; and(d) 0.1 to 100 parts by weight of at least one antimony oxide selected from the group consisting of diantimony tetroxide, hexaantimony tridecaoxide and diantimony pentoxide high reliability in terms of thermal cycle resistance, humidity resistance and the like.
    Type: Grant
    Filed: May 31, 1985
    Date of Patent: December 1, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirotoshi Ikeya, Michiya Higashi
  • Patent number: 4617584
    Abstract: There is disclosed a highly reliable resin encapsulation type semiconductor device excellent humidity resistance as well as high temperature electric characteristics. The specific feature consists in the epoxy resin composition employed for encapsulation. This composition comprises a novolac type epoxy resin, a novolac type phenol resin, an organic phosphine compound and an organic phosphorus acid compound.The resin encapsulation type semiconductor device is markedly small in leak current under hot an humid conditions and has a prolonged life due to difficult deterioration through corrosion of electrodes and aluminum wiring, as compared with those of prior art.
    Type: Grant
    Filed: March 28, 1983
    Date of Patent: October 14, 1986
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Hirotoshi Ikeya, Akiko Hatanaka
  • Patent number: 4572853
    Abstract: There is presented a highly reliable resin encapsulation type semiconductor device excellent in humidity resistance as well as high temperature electrical characteristics. The specific feature consists in the epoxy resin composition employed for encapsulation. This composition comprises an epoxy resin, a novolac resin as curing agent and an organic tertiary phosphine compound as curing accelerator. The resin encapsulation type semiconductor device is markedly small in leak current under hot and humid conditions and has a prolonged life due to difficult deterioration through corrosion of electrodes and aluminum wiring, as compared with those of prior art.
    Type: Grant
    Filed: February 21, 1984
    Date of Patent: February 25, 1986
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Hirotoshi Ikeya, Shuichi Suzuki, Takayuki Oguni, Kazutaka Matsumoto, Akiko Hatanaka
  • Patent number: 4248920
    Abstract: A semiconductor device sealed in a resin composition, wherein the resin composition contains the prescribed percentages of inorganic fillers having extremely small amounts of impurities, epoxy resin having an epoxy equivalent of 250 or less and a softening point of 120.degree. C. or less, hardening agent, hardening promoter and low melting paraffins.
    Type: Grant
    Filed: April 17, 1979
    Date of Patent: February 3, 1981
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Akira Yoshizumi, Hirotoshi Ikeya, Moriyasu Wada