Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A first aspect of the present invention will provide a short circuit detector, including: a voltage detection circuit to detect gate voltage which is input from a gate driving circuit to the semiconductor element; and a short circuit detection circuit to detect a short circuit state of the semiconductor element, when gate voltage of the semiconductor element becomes higher than or equal to first reference voltage in a transition period from when a turn-on signal is input to the gate driving circuit until when a mirror period of the semiconductor element starts.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A gate driving circuit that drives a gate of a main switching device is provided, where the gate driving circuit includes: a first resistor connected between a first potential and the gate of the main switching device; a second resistor connected between a second potential being lower than the first potential and the gate of the main switching device; a first switching device connected in series with the first resistor between the first potential and the gate of the main switching device; a second switching device connected in series with the second resistor between the second potential and the gate of the main switching device; and a control circuit that changes at least one resistance value of a resistance value of the first resistor and a resistance value of the second resistor according to a length of an ON period during which the main switching device is turned on.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A gate driving circuit that drives a gate of a main switching device is provided, where the gate driving circuit includes: a first resistor connected between a first potential and the gate of the main switching device; a second resistor connected between a second potential being lower than the first potential and the gate of the main switching device; a first switching device connected in series with the first resistor between the first potential and the gate of the main switching device; a second switching device connected in series with the second resistor between the second potential and the gate of the main switching device; and a control circuit that changes at least one resistance value of a resistance value of the first resistor and a resistance value of the second resistor according to a length of an ON period during which the main switching device is turned on.

Abstract: A gate driving circuit is connected to a main switching element. The gate driving circuit includes a gate resistor. The gate resistor includes a voltage controlled resistor of which a resistance value is able to be continuously changed. A switching power supply device includes a gate driving circuit, a main switching element, and a freewheeling diode connected in reverse parallel to the main switching element.

Abstract: A first aspect of the present invention will provide a short circuit detector, including: a voltage detection circuit to detect gate voltage which is input from a gate driving circuit to the semiconductor element; and a short circuit detection circuit to detect a short circuit state of the semiconductor element, when gate voltage of the semiconductor element becomes higher than or equal to first reference voltage in a transition period from when a turn-on signal is input to the gate driving circuit until when a mirror period of the semiconductor element starts.

Abstract: A semiconductor device includes a unipolar switching element having a drain terminal, a gate terminal, and a source terminal, wherein a serial connection body of a capacitor and a resistor is connected between the drain terminal and the gate terminal.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A gate driving circuit is connected to a main switching element. The gate driving circuit includes a gate resistor. The gate resistor includes a voltage controlled resistor of which a resistance value is able to be continuously changed. A switching power supply device includes a gate driving circuit, a main switching element, and a freewheeling diode connected in reverse parallel to the main switching element.

Abstract: A semiconductor device includes a unipolar switching element having a drain terminal, a gate terminal, and a source terminal, wherein a serial connection body of a capacitor and a resistor is connected between the drain terminal and the gate terminal.

Abstract: A method for detecting islanding operation of a rotating-machine type dispersed generator. The dispersed generator is interconnected with a main electric source through a circuit breaker to constitute an electric power system. The estimating method is implemented as follows: (a) changing electric power of the electric power system; (b) detecting frequency component of the electric power; and (c) deciding that an islanding operation of the dispersed generator is executed if the change of the frequency component becomes greater than a predetermined value. With this method, it becomes possible to detect the islanding operation of the dispersed generator even if the power flow at the interconnecting circuit breaker is generally zero.