Patents by Inventor Hirotoshi Umeda

Hirotoshi Umeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9513408
    Abstract: This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn2+, Sn4+, Sb3+ and Sb5+; (B) having a ratio of average Sn ionic radius to average Sb ionic radius of 1:(0.96 to 1.04); and (C) having an Sb content of 5 to 25 moles relative to a total of 100 moles of Sb and Sn, wherein the average Sn ionic radius is the average of ionic radii of Sn2+ and Sn4+, while the average Sb ionic radius is the average of ionic radii of Sb3+ and Sb5+.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: December 6, 2016
    Assignees: MITSUBISHI MATERIALS CORPORATION, MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD.
    Inventors: Shinya Shiraishi, Hirotoshi Umeda, Suzuo Sasaki
  • Publication number: 20150090943
    Abstract: This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn2+, Sn4+, Sb3+ and Sb5+; (B) having a ratio of average Sn ionic radius to average Sb ionic radius of 1:(0.96 to 1.04); and (C) having an Sb content of 5 to 25 moles relative to a total of 100 moles of Sb and Sn, wherein the average Sn ionic radius is the average of ionic radii of Sn2+ and Sn4+, while the average Sb ionic radius is the average of ionic radii of Sb3+ and Sb5+.
    Type: Application
    Filed: March 28, 2013
    Publication date: April 2, 2015
    Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Materials Electronic Chemicals Co., Ltd.
    Inventors: Shinya Shiraishi, Hirotoshi Umeda, Suzuo Sasaki
  • Publication number: 20130187104
    Abstract: This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D90 value of 60 nm or less in a particle size distribution. This method for producing an indium tin oxide powder includes, in series: a step (A) of coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions where a pH is in a range of 4.0 to 9.3 and a liquid temperature is in a range of 5° C. or higher, wherein the indium tin hydroxide has a color tone ranging from bright yellow to color of persimmon in a dried powder state; a step (B) of drying and calcining the indium tin hydroxide, and thereby, obtaining indium tin oxide; and a step (C) of dry pulverizing the obtained indium tin oxide in a nitrogen atmosphere.
    Type: Application
    Filed: October 24, 2011
    Publication date: July 25, 2013
    Applicants: Mitsubishi Materials Electronic Chemicals Co., Ltd., MITSUBISHI MATERIALS CORPORATION
    Inventors: Shinya Shiraishi, Hirotoshi Umeda, Ai Takenoshita
  • Publication number: 20100025638
    Abstract: A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface.
    Type: Application
    Filed: June 6, 2007
    Publication date: February 4, 2010
    Applicants: MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD, MITSUBISHI MATERIALS CORPORATION, DAI NIPPON TORYO CO., LTD.
    Inventors: Masamichi Murota, Hirotoshi Umeda, Hiroshi Ikeda, Kunio Omura, Masato Murouchi, Kenji Hayashi, Daigou Mizoguchi, Masaaki Murakami