Patents by Inventor Hirotsugu Kozuka

Hirotsugu Kozuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
    Patent number: 4609407
    Abstract: Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
    Type: Grant
    Filed: December 19, 1983
    Date of Patent: September 2, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Tamura Masao, Hirotsugu Kozuka, Yasuo Wada, Makoto Ohkura, Tamura Hiroshi, Takashi Tokuyama, Takahiro Okabe, Osamu Minato, Shinya Ohba
  • Method of diffusing an impurity
    Patent number: 4373975
    Abstract: Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused.The impurity can be diffused in much larger quantities than in a prior art vapor diffusion, and a very low sheet resistance for the diffused layer of antimony can be attained.
    Type: Grant
    Filed: January 26, 1981
    Date of Patent: February 15, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Nanba, Masahiko Ogirima, Hirotsugu Kozuka, Akira Shintani
  • Strontium barium niobate single crystal doped with Ce
    Patent number: 4187109
    Abstract: An optical element is composed of a single crystal of strontium barium niobate doped with a transition metal element such as cerium, vanadium or uranium. This element has the property of undergoing very sensitively a change in its refractive index by the application of a beam of light of specific wavelength.
    Type: Grant
    Filed: January 26, 1976
    Date of Patent: February 5, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Koichi Megumi, Hirotsugu Kozuka, Masayoshi Kobayashi, Yoshio Furuhata