Abstract: A high-density integrated circuit employing different first and second channel types of insulated gate field effect transistors is disclosed, which comprises at least three stacked wiring layers, the lowest layer being formed of polycrystalline silicon and including silicon gates of the transistors, one of the upper layers being formed of polycrystalline silicon and used for feeding a power supply to some of the transistors and being connected to at least one well region on which the first channel type of transistors are formed, and the other of the upper layers being formed of high-conductivity metal.

Abstract: An improved semiconductor device operable at a high-speed and with a low power consumption is disclosed. The device comprises a common impurity-doped region, a first insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, a second insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, control means for controlling switching operations of the first and second transistor at the same time and means for deriving an output signal from the common impurity-doped region.

Abstract: A high-density integrated circuit employing different first and second channel types of insulated gate field effect transistors is disclosed, which comprises at least three stacked wiring layers, the lowest layer being formed of polycrystalline silicon and including silicon gates of the transistors, one of the upper layers being formed of polycrystalline silicon and used for feeding a power supply to some of the transistors and being connected to at least one well region on which the first channel type of transistors are formed, and the other of the upper layers being formed of high-conductivity metal.