Abstract: A manufacturing method of power-module substrate (10), the power-module substrate (10) being obtained by joining a circuit layer (12) made of copper to one surface of a ceramic substrate (11) and joining a heat-radiation layer (13) made of aluminum to the other surface of the ceramic substrate (11), including: a circuit layer bonding step in which the circuit layer (12) is brazed on the ceramic substrate (11), a surface treatment step after the circuit layer bonding step in which a thickness of an oxide film on the other surface of the ceramic substrate (11) is made 3.2 nm or less at least at a peripheral part of an intended bonding area between the ceramic substrate (11) and the heat-radiation layer (13), and a heat-radiation layer bonding step in which the heat-radiation layer (13) is brazed on the other surface of the ceramic substrate (11) after the surface treatment step.

Abstract: In this resistor, a heat sink (Al member) (23) and the other surface (11b) of a ceramic substrate (11) are joined together using an Al—Si-based brazing filler material. The Al—Si-based brazing filler material has a melting point in a range of approximately 600° C. to 700° C. When the heat sink (23) and the ceramic substrate (11) are joined together using the Al—Si-based brazing filler material, it is possible to prevent the derogation of the heat resistance and thermal deterioration during joining at the same time.

Abstract: In this resistor, a heat sink (Al member) (23) and the other surface (11b) of a ceramic substrate (11) are joined together using an Al—Si-based brazing filler material. The Al—Si-based brazing filler material has a melting point in a range of approximately 600° C. to 700° C. When the heat sink (23) and the ceramic substrate (11) are joined together using the Al—Si-based brazing filler material, it is possible to prevent the derogation of the heat resistance and thermal deterioration during joining at the same time.

Abstract: This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 ?m to 80 ?m.

Abstract: A manufacturing method of power-module substrate (10), the power-module substrate (10) being obtained by joining a circuit layer (12) made of copper to one surface of a ceramic substrate (11) and joining a heat-radiation layer (13) made of aluminum to the other surface of the ceramic substrate (11), including: a circuit layer bonding step in which the circuit layer (12) is brazed on the ceramic substrate (11), a surface treatment step after the circuit layer bonding step in which a thickness of an oxide film on the other surface of the ceramic substrate (11) is made 3.2 nm or less at least at a peripheral part of an intended bonding area between the ceramic substrate (11) and the heat-radiation layer (13), and a heat-radiation layer bonding step in which the heat-radiation layer (13) is brazed on the other surface of the ceramic substrate (11) after the surface treatment step.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 ?m to 80 ?m.

Abstract: A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55?B/A?20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.

Abstract: Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.

Abstract: A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55?B/A?20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: A process reinforcing a silica glass substance, such as a silica glass crucible, is provided without intermixing an impurity. The process comprises forming a silica glass powder layer on a surface of the silica glass substance, and crystallizing said silica glass powder layer under high temperature. As for a silica glass crucible, the process for reinforcing the silica glass crucible and the reinforced silica glass crucible are provided, wherein the silica glass powder layer on the whole or a part of the surface of the crucible is formed and then, crystallized under a temperature at the melting of a silicon raw material being charged into said quartz glass crucible.

Abstract: Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.

Abstract: An insulating circuit board includes an insulating plate, a circuit board joined to a first surface of the insulating plate, and a metal plate joined to a second surface of the insulating plate. The circuit board is formed from an Al alloy having a purity of 99.98% or more or pure Al, and the metal plate is formed from an Al alloy having a purity of 98.00% or more and 99.90% or less. The thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, the thickness (b) of the metal plate is 0.6 mm or more and 1.5 mm or less, and the thicknesses satisfy the expression of a/b?1. An insulating circuit board having a cooling sink includes cooling sink joined via a second solder layer. The second solder layer contains Sn as its main component, and has a Young's modulus, 35 GPa or more, a 0.2% proof stress of, 30 MPa or more, and a tensile strength of, 40 MPa or more. The cooling sink is formed from, pure Al or an Al alloy.

Abstract: A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.

Abstract: A process reinforcing a silica glass substance, such as a silica glass crucible, is provided without intermixing an impurity. The process comprises forming a silica glass powder layer on a surface of the silica glass substance, and crystallizing said silica glass powder layer under high temperature. As for a silica glass crucible, the process for reinforcing the silica glass crucible and the reinforced silica glass crucible are provided, wherein the silica glass powder layer on the whole or a part of the surface of the crucible is formed and then, crystallized under a temperature at the melting of a silicon raw material being charged into said quartz glass crucible.

Abstract: A process reinforcing a silica glass substance, such as a silica glass crucible, is provided without intermixing an impurity. The process comprises forming a silica glass powder layer on a surface of the silica glass substance, and crystallizing said silica glass powder layer under high temperature. As for a silica glass crucible, the process for reinforcing the silica glass crucible and the reinforced silica glass crucible are provided, wherein the silica glass powder layer on the whole or a part of the surface of the crucible is formed and then, crystallized under a temperature at the melting of a silicon raw material being charged into said quartz glass crucible.