Abstract: To provide a press system enabling to take out a workpiece from below a die and achieve miniaturization and simplification of a device. The press system includes: a plurality of press working units each including a die 71 and a punch; and a transfer device 76 that transfers a workpiece processed in one press working unit to the next press working unit. The transfer device 76 includes: a plurality of transfer fingers 77 that clamp the workpiece from both sides in a direction perpendicular to a transfer direction of the workpiece; slide bars (78A, 78B) on which the plurality of transfer fingers 77 are disposed; a drive unit that drives the slide bars (78A, 78B) to reciprocate; stays 80 extending from the slide bars (78A, 78B) toward an underside of a specific die 71A; and an under-die removal finger 81 disposed on the stays 80, the under-die removal finger 81 clamping the workpiece moved to below the specific die 71A.

Abstract: A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-y buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Abstract: A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-y buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Abstract: An organic electroluminescent device having the hole-transport layer in which the hole-transport material is dispersed in the resin binder having a glass transition temperature of not less than 170.degree. C.Since the above organic electroluminescent device has the hole-transport layer exhibiting sufficient durability and higher hole-transport property, it is excellent in luminous efficiency, luminance and stability.

Abstract: The triazole derivatives of this invention are expressed by the general formula (1).The organic electroluminescent device of this invention have a layer containing at least one triazole derivative of the general formulas (1) and (2).Such triazole derivatives are excellent in electron-transport efficiency, hole-blocking properties and heat resistance, and such organic electroluminescent devices are excellent in luminous efficiency, luminance and stability. ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10 have the same meanings as indicated in the specification.