Patents by Inventor Hiroya Yamarin

Hiroya Yamarin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200295053
    Abstract: The disclosure relates to a (thin-film transistor) TFT substrate that includes a light shielding film provided continuously adjacent to a common electrode in a region overlapping with a drain electrode in plan view below a drain electrode. Furthermore, the TFT substrate includes a light shielding film provided below the source electrode in a region where the source electrode and the common electrode overlap in plan view. In addition, in a gate terminal portion, the TFT substrate includes a light shielding film having conductivity above a gate electrode. The light shielding film is electrically connected to the gate electrode, and overlaps with the gate electrode in plan view.
    Type: Application
    Filed: November 6, 2017
    Publication date: September 17, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hiroya YAMARIN, Takeo FURUHATA, Kazunori INOUE
  • Publication number: 20170301805
    Abstract: A solar cell manufacturing method including: forming, on one surface of a first conductivity-type semiconductor substrate, a first doped layer in which second conductivity-type impurities are diffused in a first concentration, and a second doped layer in which the second conductivity-type impurities are diffused in a second concentration lower than the first concentration, the second doped layer has surface roughness different from the first doped layer; and forming a metal electrode on the first doped layer to be electrically connected to the first doped layer, wherein a position of the first doped layer is detected based on a difference in light reflectance between the first and second doped layers, which results from a difference in surface roughness between the first and second doped layers, and then the metal electrode is formed in alignment with a detected position of the first doped layer.
    Type: Application
    Filed: November 16, 2015
    Publication date: October 19, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hiroya YAMARIN, Takayuki MORIOKA, Takeo FURUHATA
  • Publication number: 20170278998
    Abstract: A manufacturing method for a solar cell includes a step of forming a p-type diffusion layer on one principal surface side of an n-type silicon substrate and forming an n-type silicon substrate having a pn junction, a step of forming a laminated film of a silicon oxide film and a silicon nitride film as a passivation film on a surface on a side of a light receiving surface that is an n type, a step of forming an open region in the passivation film, a step of diffusing n-type impurities with respect to the open region of the passivation film by using the passivation film as a mask to form a high-concentration diffusion region, and a step of forming a metal electrode selectively in the high-concentration diffusion region that is exposed in the open region of the passivation film.
    Type: Application
    Filed: March 4, 2015
    Publication date: September 28, 2017
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hiroya YAMARIN, Yusuke SHIRAYANAGI
  • Patent number: 9711669
    Abstract: A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: July 18, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hidetada Tokioka, Hiroya Yamarin
  • Patent number: 9472711
    Abstract: A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: October 18, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tsutomu Matsuura, Hiroya Yamarin, Hidetada Tokioka
  • Publication number: 20160197207
    Abstract: A solar cell includes a p-type monocrystalline silicon substrate having first and second principal surfaces, an n-type diffusion layer formed on the first principal surface of the p-type monocrystalline silicon substrate, a plurality of grid electrodes formed on the n-type diffusion layer, a first collector electrode including a bus electrode that connects the grid electrodes to establish connection to the outside, and a second collector electrode formed on the second principal surface. The n-type diffusion layer has a lower impurity concentration in a first region surrounding the bus electrode than a second region away from the bus electrode.
    Type: Application
    Filed: December 8, 2015
    Publication date: July 7, 2016
    Applicant: Mitsubishi Electric Corporation
    Inventors: Takayuki MORIOKA, Hirofumi KONISHI, Tatsuro WATAHIKl, Hiroya YAMARIN, Hidetada TOKIOKA
  • Publication number: 20140373896
    Abstract: A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.
    Type: Application
    Filed: March 29, 2012
    Publication date: December 25, 2014
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tsutomu Matsuura, Hiroya Yamarin, Hidetada Tokioka
  • Patent number: 8828780
    Abstract: This invention relates to a method of manufacturing a substrate for photoelectric conversion device including, on a substrate, a first electrode layer formed of a transparent conductive material. The method includes a first transparent conductive film forming step of forming a first transparent conductive film on the substrate, a second transparent conductive film forming step of forming a second transparent conductive film under a film forming condition that an etching rate is low compared with the first transparent conductive film at a later etching step, and an etching step of wet-etching the second and first transparent conductive films to form recesses that pierce through at least the second transparent conductive film, with the bottoms of the recesses being present in the first transparent conductive film.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: September 9, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tsutomu Matsuura, Hiroya Yamarin, Yuki Tsuda
  • Patent number: 8766085
    Abstract: A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: July 1, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hidetada Tokioka, Hiroya Yamarin, Tae Orita
  • Patent number: 8631762
    Abstract: A plasma CVD apparatus includes: a film forming chamber; a holding member that holds a substrate to be processed that is set in the film forming chamber; a shower head that is set in the film forming chamber to face the holding member, and supplies raw material gas and generates a plasma of the raw material gas; a radical generation chamber that is set at an opposite side of the shower head relative to the holding member and generates radicals of process gas; and an openable and closable shutter that is provided between the shower head and the radical generation chamber.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: January 21, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Mikio Yamamuka, Tae Orita, Hiroya Yamarin
  • Patent number: 8507310
    Abstract: A method for manufacturing a thin-film photoelectric conversion device includes forming a first electrode layer, a photoelectric conversion layer having three conductive semiconductor layers laminated thereon, and a second electrode layer sequentially laminated in this order on a translucent insulating substrate, such that adjacent thin-film photoelectric conversion cells are electrically connected in series, isolating a thin-film photoelectric conversion cell into a plurality of thin-film photoelectric conversion cells by forming isolation trenches that reach from the second electrode layer to the first electrode layer, removing a part of sidewalls at an external periphery of the thin-film photoelectric conversion cells positioned at an external peripheral edge of the thin-film photoelectric conversion device, along with the external periphery, and modifying into insulation layers by performing an oxidation process on all of the sidewalls of the isolation trenches of the photoelectric conversion layer and al
    Type: Grant
    Filed: November 20, 2009
    Date of Patent: August 13, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hidetada Tokioka, Hiroya Yamarin, Tae Orita
  • Publication number: 20130025651
    Abstract: This invention relates to a method of manufacturing a substrate for photoelectric conversion device including, on a substrate, a first electrode layer formed of a transparent conductive material. The method includes a first transparent conductive film forming step of forming a first transparent conductive film on the substrate, a second transparent conductive film forming step of forming a second transparent conductive film under a film forming condition that an etching rate is low compared with the first transparent conductive film at a later etching step, and an etching step of wet-etching the second and first transparent conductive films to form recesses that pierce through at least the second transparent conductive film, with the bottoms of the recesses being present in the first transparent conductive film.
    Type: Application
    Filed: December 7, 2010
    Publication date: January 31, 2013
    Inventors: Tsutomu Matsuura, Hiroya Yamarin, Yuki Tsuda
  • Publication number: 20120000518
    Abstract: A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.
    Type: Application
    Filed: March 16, 2010
    Publication date: January 5, 2012
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hidetada Tokioka, Hiroya Yamarin, Tae Orita
  • Publication number: 20110223709
    Abstract: A method for manufacturing a thin-film photoelectric conversion device includes forming a first electrode layer, a photoelectric conversion layer having three conductive semiconductor layers laminated thereon, and a second electrode layer sequentially laminated in this order on a translucent insulating substrate, such that adjacent thin-film photoelectric conversion cells are electrically connected in series, isolating a thin-film photoelectric conversion cell into a plurality of thin-film photoelectric conversion cells by forming isolation trenches that reach from the second electrode layer to the first electrode layer, removing a part of sidewalls at an external periphery of the thin-film photoelectric conversion cells positioned at an external peripheral edge of the thin-film photoelectric conversion device, along with the external periphery, and modifying into insulation layers by performing an oxidation process on all of the sidewalls of the isolation trenches of the photoelectric conversion layer and al
    Type: Application
    Filed: November 20, 2009
    Publication date: September 15, 2011
    Applicant: Mitsubishi Electric Corporation
    Inventors: Hidetada Tokioka, Hiroya Yamarin, Tae Orita
  • Publication number: 20110220189
    Abstract: A thin film solar cell device of higher power generation efficiency, having a tandem structure in which a transparent electrode layer is inserted between a back surface electrode layer and a photoelectric conversion layer and between a plurality of stacked photoelectric conversion layers. A first electricity conducting path is obtained by forming a thin film made of a conductive material (with specific resistance<10?4 ?km) in a micropore penetrating an intermediate transparent electrode layer and a first insulating layer, for electrically connecting first and second photoelectric conversion layers to each other. A second electricity conducting path having the same structure also electrically connects the second photoelectric conversion layer and a back surface electrode layer to each other. The gross area of an electricity conducting path of the first and second electricity conducting paths is set in a range not less than 1×10?7 and not more than 4×10?6 relative to the area of the cell.
    Type: Application
    Filed: September 17, 2008
    Publication date: September 15, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Mikio Yamamuka, Tae Orita, Hiroya Yamarin
  • Publication number: 20110177644
    Abstract: A plasma CVD apparatus includes: a film forming chamber; a holding member that holds a substrate to be processed that is set in the film forming chamber; a shower head that is set in the film forming chamber to face the holding member, and supplies raw material gas and generates a plasma of the raw material gas; a radical generation chamber that is set at an opposite side of the shower head relative to the holding member and generates radicals of process gas; and an openable and closable shutter that is provided between the shower head and the radical generation chamber.
    Type: Application
    Filed: October 14, 2009
    Publication date: July 21, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Mikio Yamamuka, Tae Orita, Hiroya Yamarin
  • Publication number: 20110108118
    Abstract: A thin-film solar cell in which a transparent electrode having fine surface irregularities with small surface roughness and substantially uniform in-plane resistance is realized can be obtained by forming a plurality of first transparent conductive films separated from one another in a substrate surface on a transparent insulative substrate, forming a second transparent conductive film on the first transparent conductive films, etching the second transparent conductive film in a granular shape and forming first granular members dispersed on the first transparent conductive films, forming a power generation layer on the first transparent conductive films and on the dispersed first granular members, forming a rear-side electrode layer on the power generation layer.
    Type: Application
    Filed: May 22, 2009
    Publication date: May 12, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hiroya Yamarin, Hidetada Tokioka, Mikio Yamamuka
  • Publication number: 20110079272
    Abstract: A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series.
    Type: Application
    Filed: June 3, 2009
    Publication date: April 7, 2011
    Applicant: Mitsusbishi Electric Corporation
    Inventors: Hidetada Tokioka, Hiroya Yamarin