Abstract: In a semiconductor memory including first and second bit lines complementary to each other and provided for each one memory cell column, and a sense amplifier connected to the first and second bit lines, for sensing and amplifying a voltage difference between the first and second bit lines, a first pull-up circuit is connected to the first bit line, for pulling up, in accordance with a potential of the second bit line, the first bit line to a high voltage supply potential. A second pull-up circuit is connected to the second bit line, for pulling up, in accordance with a potential of the second bit line, the second bit line to a high level potential lower than that the high voltage supply potential by a predetermined potential difference.

Abstract: High stability composition of ring-opening polymerization product which is formed of (A) 100 parts by weight of at least one ring-opening polymerization product selected from the group consisting of (a) ring-opening polymerization homopolymers of norbornene derivatives containing at least one cyano group, (b) ring-opening polymerization homopolymers of norbornene derivatives containing at least one ester group, (c) ring-opening polymerization homopolymers of norbornene derivatives containing at least one ether group, (d) ring-opening polymerization homopolymers containing at least one N-substituted cyclic imide group, (e) ring-opening polymerization interpolymers of the above-mentioned types of norbornene derivatives, and (f) other ring-opening polymerization copolymers obtained by the ring-opening copolymerization of said various types of norbornene derivatives and 50 mol% at most of other unsaturated cyclic compounds; and (B) 0.01 to 10.0 parts by weight of specified phenolic compounds.