Abstract: A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.

Abstract: A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.

Abstract: A method of making a heat treated coated glass comprising the steps of: forming a solar control layer or an electroconductive layer on a glass substrate; forming a first protective layer composed of a non-oxide or not completely oxidized, which is transparent in a region of visible light, and which remains transparent even when oxidized, to provide a glass coated with a multi-layer comprising at least two layers including said solar control layer or an electroconductive layer and said first protective layer; and performing heat-treatment for said coated glass.

Abstract: In a method of forming a transparent conductive film, an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 .times. 10.sup.-4 Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.

Abstract: A high-efficient sheet plasma sputtering method and an apparatus for carrying out the method which comprise means for deforming an arc plasma stream into a form of sheet by a magnetic field so that ions in the sheet plasma are accelerated to a target which is controlled to have a negative potential to the sheet plasma, whereby a coating layer is formed by sputtering on a substrate arranged opposite the target with respect to the sheet plasma.