Abstract: A crystal controlled oscillator includes a crystal unit, an integrated circuit, and an insulating resin. The crystal unit contains a crystal vibrating piece resonating at a predetermined frequency. The integrated circuit places the crystal unit. The integrated circuit includes an oscillator circuit oscillating the crystal vibrating piece. The insulating resin is formed to cover the crystal unit on the integrated circuit.

Abstract: A crystal oscillator includes a quartz crystal piece, a semiconductor chip, and a temperature sensor. The semiconductor chip includes an oscillator circuit to cause the quartz crystal piece to oscillate and a first bump. The first bump is connected to the oscillator circuit and disposed on a surface of the semiconductor chip facing the quartz crystal piece. The temperature sensor is bonded to the first bump.

Abstract: A crystal controlled oscillator includes a crystal unit, an integrated circuit, and an insulating resin. The crystal unit contains a crystal vibrating piece resonating at a predetermined frequency. The integrated circuit places the crystal unit. The integrated circuit includes an oscillator circuit oscillating the crystal vibrating piece. The insulating resin is formed to cover the crystal unit on the integrated circuit.

Abstract: A crystal oscillator includes a quartz crystal piece, a semiconductor chip, and a temperature sensor. The semiconductor chip includes an oscillator circuit to cause the quartz crystal piece to oscillate and a first bump. The first bump is connected to the oscillator circuit and disposed on a surface on a side of the quartz crystal piece. The temperature sensor is bonded to the first bump.

Abstract: A semiconductor integrated circuit that includes a circuit element with a reduced parasitic capacitance and has a short start-up time. A well of the different type of conduction from that of the substrate is formed in the area of the surface of the semiconductor substrate under the circuit element. A constant voltage, which biases the junction between the well and the semiconductor substrate in a reverse direction, is applied to the well through a resistor having a higher impedance compared with the impedance of the capacitance of the reverse-biased junction between the well and the substrate at the frequency of the signal applied to the circuit element.

Abstract: A semiconductor integrated circuit that includes a circuit element with a reduced parasitic capacitance and has a short start-up time. A well of the different type of conduction from that of the substrate is formed in the area of the surface of the semiconductor substrate under the circuit element. A constant voltage, which biases the junction between the well and the semiconductor substrate in a reverse direction, is applied to the well through a resistor having a higher impedance compared with the impedance of the capacitance of the reverse-biased junction between the well and the substrate at the frequency of the signal applied to the circuit element.

Abstract: A projection is formed in a substrate by anisotropic etching and a transistor is contained in the projection. The central portion of the projection covered with a gate electrode is formed as a channel region, and drain and source regions are formed on both sides of the projection by oblique ion implantation with the gate electrode as a mask. Formed below the drain, source, and channel regions is an element isolation section having the composition of the substrate intact. This eliminates the need for an oxide insulating layer below the transistor for easy manufacturing. Carriers generated in the channel region by ionization by collision can also be discharged to the substrate.