Abstract: In one embodiment, a dust collecting apparatus includes a container configured to contain a fluid that includes particles to be collected. The apparatus further includes one or more sound sources configured to generate, in the container, a standing sound wave including at least one node to trap the particles in a vicinity of the node. The one or more sound sources are configured to generate the standing sound wave so that the node does not contact a wall face of the container or contacts a predetermined portion of the wall face of the container. The predetermined portion is formed of a member that prevents the particles from leaving from the node located in a vicinity of the predetermined portion.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes the following processes. Second layers and first layers are alternately stacked on a substrate to form a stack. A mask layer is formed on the first layer in a surface of the stack. A part of the mask layer is removed to expose part of the first layer, and a protective layer is formed in a surface layer of the mask layer. The exposed first layer is etched with a first etching solution to expose part of the second layer after forming the protective layer. The exposed second layer is etched with a second etching solution after etching the first layer. The mask layer is etched with a third etching solution to further expose part of the first layer, after etching the first layer and etching the second layer.

Abstract: In one embodiment, a substrate treatment method includes cleaning and rinsing a surface of a substrate provided with a pattern, and supplying a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The method further includes precipitating the solidifying agent as solid on the surface of the substrate, and decomposing and gasifying the solid to remove the solid from the surface of the substrate. Furthermore the solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or an atom group.