Abstract: A radio-frequency amplifier having an input-side line portion and an output-side line portion including an input slot line and an output slot line extending in parallel formed on a substrate. In a connecting portion of a transistor, a gate electrode G, a drain electrode D, and source electrodes S are arranged in a coplanar manner. The gate electrode G, the drain electrode D, and the source electrodes S are connected to DC electrodes and a ground electrode, respectively, in a flip chip method via bumps, so that the orientation of the slot lines is perpendicular to the orientation of the gate electrode G and the drain electrode D. Preferably, the source electrodes S of the transistor are connected via an air bridge.

Abstract: A dielectric resonator device includes a dielectric substrate. Electrode films are formed on the front and back surfaces of the dielectric substrate, respectively. A TE010-mode resonator is constituted by two circular openings which oppose each other and which are formed in the electrode films. Two opposing slots formed in the electrode films constitute a planar dielectric transmission line (PDTL). The PDTL is connected to the TE010-mode resonator. An excitation section is formed by extending two portions of each electrode film on two side of each slot into each opening.

Abstract: A high-frequency circuit device includes a dielectric substrate. A planar conductor is provided on each of top and bottom surfaces of the dielectric substrate and a slot line is formed on the top surface. Also, undesired-wave propagation preventing circuits, each including multistage band-elimination filters, are provided on the top surface of the dielectric substrate, with the slot line therebetween. Each of the band-elimination filters includes two conductive lines and a resonator which is provided at a portion of one of the conductive lines and which includes two spiral lines. Accordingly, propagation of an undesired wave of the band whose center is the resonance frequency of the resonator can be prevented.

Abstract: A high-frequency circuit device includes a substrate and a high-frequency circuit. The high-frequency circuit is provided on the substrate and has a signal line. The signal line is configured with a slot line provided by electrodes that are arranged side-by-side with a space therebetween on the substrate. The slot line can facilitates circuit design compared to a microstrip line and has significantly low conduction loss compared to a coplanar line, and can improve the Q-value of the high frequency circuit. This can provide an improved high-frequency circuit device having small phase noise. The high-frequency circuit device, which also serves as an oscillator, employs a slot output and thus can provide an advantage of better continuity for a class-B push-pull amplifier that operates more efficiently than a class-A one.

Abstract: A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.

Abstract: A high-frequency circuit device includes a dielectric substrate. A planar conductor is provided on each of top and bottom surfaces of the dielectric substrate and a slot line is formed on the top surface. Also, undesired-wave propagation preventing circuits, each including multistage band-elimination filters, are provided on the top surface of the dielectric substrate, with the slot line therebetween. Each of the band-elimination filters includes two conductive lines and a resonator which is provided at a portion of one of the conductive lines and which includes two spiral lines. Accordingly, propagation of an undesired wave of the band whose center is the resonance frequency of the resonator can be prevented.

Abstract: A high-frequency circuit device includes a substrate and a high-frequency circuit. The high-frequency circuit is provided on the substrate and has a signal line. The signal line is configured with a slot line provided by electrodes that are arranged side-by-side with a space therebetween on the substrate. The slot line can facilitates circuit design compared to a microstrip line and has significantly low conduction loss compared to a coplanar line, and can improve the Q-value of the high frequency circuit. This can provide an improved high-frequency circuit device having small phase noise. The high-frequency circuit device, which also serves as an oscillator, employs a slot output and thus can provide an advantage of better continuity for a class-B push-pull amplifier that operates more efficiently than a class-A one.

Abstract: A dielectric resonator device includes a dielectric substrate. Electrode films are formed on the front and back surfaces of the dielectric substrate, respectively. A TE010-mode resonator is constituted by two circular openings which oppose each other and which are formed in the electrode films. Two opposing slots formed in the electrode films constitute a planar dielectric transmission line (PDTL). The PDTL is connected to the TE010-mode resonator. An excitation section is formed by extending two portions of each electrode film on two side of each slot into each opening.

Abstract: A radio frequency module includes a multi-chip substrate divided into separate substrates. An antenna block, a duplexer block, a transmitter block, a receiver block, and an oscillator block are formed on the separate substrates. Connection resonators, which are connected to transmission lines, are formed at edges of the separate substrates. The connection resonators on adjacent ones of the separate substrates are arranged close to each other such that the two adjacent resonators are electromagnetically coupled to each other. Thus, the transmission lines on the separate substrates are interconnected, and a signal can be propagated among the blocks.

Abstract: A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.

Abstract: A radio-frequency amplifier comprises slot lines formed in a top electrode which are bent to define matching segments that are perpendicular to transmitting segments. The matching segments have a length corresponding to one-quarter of the wavelength of a signal to be amplified and are at least partially perpendicular to the transmitting segments. A DC-cut circuit comprising slot lines is connected to the matching segments, an FET is connected to the transmitting segments and the matching segments, and respective matching circuits serve as an input unit and an output unit of the FET. Source terminals of the FET are connected to parts of a top electrode that do not lie between the segments. A drain terminal and a gate terminal are connected, to be electrically separated from each other, to parts of the top electrode, which are electrically separated from the source terminals by the DC-cut circuit, the transmitting segments, and the matching segments.

Abstract: A radio frequency module includes a multi-chip substrate divided into separate substrates. An antenna block, a duplexer block, a transmitter block, a receiver block, and an oscillator block are formed on the separate substrates. Connection resonators, which are connected to transmission lines, are formed at edges of the separate substrates. The connection resonators on adjacent ones of the separate substrates are arranged close to each other such that the two adjacent resonators are electromagnetically coupled to each other. Thus, the transmission lines on the separate substrates are interconnected, and a signal can be propagated among the blocks.

Abstract: A radio-frequency amplifier comprises slot lines formed in a top electrode which are bent to define matching segments that are perpendicular to transmitting segments. The matching segments have a length corresponding to one-quarter of the wavelength of a signal to be amplified and are at least partially perpendicular to the transmitting segments. A DC-cut circuit comprising slot lines is connected to the matching segments, an FET is connected to the transmitting segments and the matching segments, and respective matching circuits serve as an input unit and an output unit of the FET. Source terminals of the FET are connected to parts of a top electrode that do not lie between the segments. A drain terminal and a gate terminal are connected, to be electrically separated from each other, to parts of the top electrode, which are electrically separated from the source terminals by the DC-cut circuit, the transmitting segments, and the matching segments.