Abstract: The invention relates to an electronic device (10) with a Near Field Communication (NFC) interface, and a method for accessing data using NFC. The NFC interface of the electronic device is positioned within communication range of a second NFC interface of a second device, whereby data is transferred to the first electronic device from the second electronic device. The data is sorted into a layered data structure including at least two layers, wherein a first layer includes directly presentable first information, such as brief content description, and a second layer includes a communication address to an information source accessible by means of a network connection to download further information.

Abstract: A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently distant from the depletion layer between the p-type doped layer and the n-type doped layer. When a component of intensity of light from the active layer normal to the active layer is P(x), x for its maximum value Pmax is x=0, and the range of x satisfying P(x)>Pmax/e2 is −Ln<x<Lp in a semiconductor light emitting device having a p-n junction, doping concentration of at least a portion of the n-type doped layer where x>−Ln is made lower than doping concentration of the other portion of the n-type doped layer, or doping concentration of at least a part of the p-type doped layer where x<Lp is made lower than doping concentration of the other part of the p-type doped layer.

Abstract: In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.

Abstract: A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.

Abstract: A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0<x<1,0<y<1,0.ltoreq.z<1) system compound semiconductor, at least one active layer (5) made of Zn.sub.A Cd.sub.B Be.sub.1-A-B S.sub.c Se.sub.1-C (0<A.ltoreq.1, 0.ltoreq.B<1, 0.ltoreq.C<1), having a compressive distortion relative to the above substrate and located between the first and second conductivity type cladding layers, and at least one strain compensation layer having a tensile distortion relative to the above substrate and made of Zn.sub.u Cd.sub.1-u S.sub.v Se.sub.1-v (0<u.ltoreq.1, 0.ltoreq.v<1).

Abstract: An optical directional coupler switch is fabricated from a semiconductor substrate having a (111) plane. Thus, refractive indexes are changed for TE and TM modes by electrooptic effect, although the change amount is different between TE and TM modes. Therefore, a switching operation is realized for an incident light having any polarization. A device length L is preferrably set to meet an equation of "L.sub.TE .ltoreq.L.ltoreq.L.sub.TM " (L.sub.TE and L.sub.TM are coupling lengths for TE and TM modes) to decrease a cross-talk, even if the coupling lengths are different between TE and TM modes, considering that the difference is small.