Abstract: Disclosed is a fuel cell comprising a fuel cell body (stacked body) including a unit cell having an electromotive section in which an electrolyte membrane is sandwiched between a fuel electrode and an oxidant electrode, and a liquid fuel tank for storing a liquid fuel that is to be supplied to the fuel cell body and connected to the fuel cell body. The liquid fuel is introduced by the capillary action into the unit cell included in the fuel cell body and vaporized within the unit cell so as to be supplied to the fuel electrode, thereby generating an electric power. The liquid fuel tank is provided with a pressure adjusting mechanism for introducing a required amount of the liquid fuel from a liquid outlet port into the unit cell.

Abstract: The present invention provides an electrolyte composition, comprising an electrolyte containing at least one kind of an imidazolium salt selected from the group consisting of 1-methyl-3-propyl imidazolium iodide, 1-methyl-3-isopropyl imidazolium iodide, 1-methyl-3-butyl imidazolium iodide, 1-methyl-3-isobutyl imidazolium iodide and 1-methyl-3-sec-butyl imidazolium iodide, a halogen-containing compound dissolved in the electrolyte, and a compound dissolved in the electrolyte and containing at least one element selected from the group consisting of N, P and S, the compound being capable of forming an onium salt together with the halogen-containing compound.

Abstract: A photovoltaic conversion element comprising, a first transparent electrode, a transparent semiconductor layer disposed on the first transparent electrode, a sensitizing dye adsorption portion which is disposed on the surface of the transparent semiconductor layer, a carrier transport layer formed on the sensitizing dye adsorption portion, and a second transparent electrode disposed on the carrier transport layer, wherein the sensitizing dye adsorption portion comprises sensitizing dyes of plural kinds of color, which are adsorbed on a plurality of surface regions of the semiconductor layer.

Abstract: Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.

Abstract: Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

Abstract: Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

Abstract: A circuit board having at least one insulator layer and at least one conductor layer which includes at least one of the whole insulator layers in a sintered body containing .beta.-Si.sub.3 N.sub.4 as a main component and at least one element selected from the group consisting of a rare earth element and an alkaline earth element, and at least one of the whole conductor layers contains at least one element selected from the group of IVb, Vb and VIb group of the periodic table, and at least one element selected from the group of a rare earth element and an alkaline earth element, and a Si element.

Abstract: Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

Abstract: Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component.