Abstract: A solid state image sensing device comprises a photosensitive semiconductor element having a plurality of photocells on a surface thereof. A protective layer is disposed on the photosensitive semiconductor element, and an inorganic layer is disposed on the protective layer. A plurality of color filter layers each comprising a coloring agent having a color absorption characteristic are mixed into a portion of the inorganic layer in locations overlying the photocell, and a surface protective coating is disposed on a surface of the color filter layers.

Abstract: A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the electrodes. The reactor is held at a predetermined pressure and an etching gas supplied thereto. Rf power is applied between the electrodes with the positive terminal of the rf generator being coupled to the electrode upon which the workpiece is disposed. The frequency of the rf power is 10 MHz or less.

Abstract: A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the electrodes. The reactor is held at a predetermined pressure and an etching gas supplied thereto. Rf power is applied between the electrodes with the positive terminal of the rf generator being coupled to the electrode upon which the workpiece is disposed. The frequency of the rf power is 10 MHz or less.