Patents by Inventor Hiroyuiki ODE

Hiroyuiki ODE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160260479
    Abstract: A semiconductor memory device comprises: a memory cell array 11; and a control circuit 16 that controls a voltage applied to the memory cell array 11. The memory cell array 11 includes: a plurality of word lines WL and bit lines BL that intersect each other; and a memory cell MC disposed at each of intersections of these word lines WL and bit lines BL. The memory cell MC includes a variable resistance element VR and a non-ohmic element NO. The variable resistance element VR is formed by a hafnium oxide crystalline film of monoclinic crystal in which a proportion of a component oriented in a (?1, 1, 1) plane and a (1, 1, 1) plane is 90% or more. This hafnium oxide crystalline film can be manufactured by a film-forming process by atomic layer deposition, employing an inorganic type hafnium precursor.
    Type: Application
    Filed: September 3, 2015
    Publication date: September 8, 2016
    Inventors: Hiroyuiki ODE, Takeshi YAMAGUCHI, Takeshi TAKAGI, Toshiharu TANAKA, Masaki YAMATO