Abstract: The present invention provides a mesoscopic magnetic body comprising a tabular ferromagnetic body whose planar shape has an axis of symmetry, but which is not symmetric in the direction perpendicular to the axis of symmetry, and wherein the magnetic body shows a circular single domain structure upon removal of the external parallel magnetic field. MRAMs which apply such a mesoscopic magnet and production methods thereof are also provided. As a result, it is possible to control the magnetization direction in nano-scale mesoscopic magnets as well as eliminate the limitation on the number of times in rewriting and writing.

Abstract: A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 ?m disposed at intervals of not more than 1 ?m, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.

Abstract: Methods for producing silicon substrates that have a silicon surface layer with a high voidage are provided. These methods do not involve the use of hydrogen fluoride, and the silicon surface of these substrates has a voidage high enough to be regarded as defining a quantum wire. The methods for producing silicon substrates that have a surface layer with a high voidage comprise at least the steps of depositing a uniform metal coating on at least a part of the silicon substrate; immersing the coated silicon substrate in a treating solution comprising at least hydrochloric acid and nitric acid to etch the metal coated surface; recovering the silicon substrate from the treating solution after a predetermined time; and removing any part other than the region in which microgrooves are approximately uniformly distributed. Also provided are silicon substrates that have a surface layer with a high voidage which are produced by such methods.

Abstract: The object of the present invention is to provide a method and device thereof that captures microscopic magnetic signals such as those developed by electrical current flowing inside a circuit that is miniaturized to less than sub-micron order, and to evaluate the circuit.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: The object of the present invention is to provide a method and device thereof that captures microscopic magnetic signals such as those developed by electrical current flowing inside a circuit that is miniaturized to less than sub-micron order, and to evaluate the circuit.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

Abstract: A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

Abstract: A semiconductor magneto-optical material includes a semiconductor dispersed with fine magnetic material particles and is characterized by exibiting magneto-optical optical effect at ordinary room temperature.

Abstract: A semiconductor magneto-optical material includes a semiconductor dispersed with fine magnetic material particles and is characterized by exhibiting magneto-optical effect at ordinary room temperature.