Patents by Inventor Hiroyuki Aso
Hiroyuki Aso has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11387049Abstract: An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.Type: GrantFiled: October 2, 2019Date of Patent: July 12, 2022Assignee: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Patent number: 11098411Abstract: An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity.Type: GrantFiled: June 19, 2019Date of Patent: August 24, 2021Assignee: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Patent number: 11087930Abstract: An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.Type: GrantFiled: June 25, 2018Date of Patent: August 10, 2021Assignee: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Patent number: 10858745Abstract: A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.Type: GrantFiled: August 24, 2017Date of Patent: December 8, 2020Assignee: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Publication number: 20200238267Abstract: An oxygen evolution device comprises an oxygen evolution electrode and an counter electrode. The oxygen evolution electrode includes: a photocatalyst layer that is formed of a perovskite-type oxide containing at least cobalt (Co), lanthanum (La), and oxygen (O) and that is located at an uppermost layer; a support body that includes at least a layer inside which a depletion layer is formed, and that supports the photocatalyst layer; and a perovskite-type tin compound buffer layer that is degenerately doped n-type and that is disposed between the photocatalyst layer and the support body.Type: ApplicationFiled: December 19, 2019Publication date: July 30, 2020Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Publication number: 20200144473Abstract: A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.Type: ApplicationFiled: September 12, 2019Publication date: May 7, 2020Applicant: FUJITSU LIMITEDInventors: John David BANIECKI, Hiroyuki ASO, Yasutoshi KOTAKA, Yoshihiko IMANAKA
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Publication number: 20200111619Abstract: An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.Type: ApplicationFiled: October 2, 2019Publication date: April 9, 2020Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Patent number: 10559737Abstract: A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.Type: GrantFiled: October 6, 2016Date of Patent: February 11, 2020Assignee: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Publication number: 20200010965Abstract: An oxygen generation electrode includes: a conductive substrate; and an oxide film formed on a first surface of the conductive substrate and containing Ba, Sn, and La or Sb, wherein the oxide film has a first absorption edge in a visible light region and a second absorption edge in an infrared light region.Type: ApplicationFiled: September 19, 2019Publication date: January 9, 2020Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Takashi Yamazaki, Hiroyuki Aso, Yoshihiko Imanaka
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Publication number: 20200013938Abstract: A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.Type: ApplicationFiled: September 13, 2019Publication date: January 9, 2020Applicant: FUJITSU LIMITEDInventors: John David BANIECKI, Hiroyuki ASO, Yasutoshi KOTAKA, Yoshihiko IMANAKA
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Publication number: 20190301030Abstract: An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity.Type: ApplicationFiled: June 19, 2019Publication date: October 3, 2019Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
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Publication number: 20190006120Abstract: An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.Type: ApplicationFiled: June 25, 2018Publication date: January 3, 2019Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki ASO, Yoshihiko Imanaka
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Patent number: 10103308Abstract: A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.Type: GrantFiled: October 11, 2016Date of Patent: October 16, 2018Assignee: FUJITSU LIMITEDInventors: John David Baniecki, Takashi Yamazaki, Hiroyuki Aso, Yoshihiko Imanaka
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Publication number: 20180057951Abstract: A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.Type: ApplicationFiled: August 24, 2017Publication date: March 1, 2018Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki ASO, Yoshihiko Imanaka
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Publication number: 20170213653Abstract: A multilayer thin-film structure has a layered structure with an alternative stacking series of a first layer of a first oxide semiconductor and a second layer of a second oxide semiconductor different from the first oxide semiconductor, wherein the layered structure has one or more band gaps including a range of 1.3 eV to 1.5 eV.Type: ApplicationFiled: January 18, 2017Publication date: July 27, 2017Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Takashi Yamazaki, Hiroyuki ASO, Yoshihiko Imanaka
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Publication number: 20170104144Abstract: A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.Type: ApplicationFiled: October 6, 2016Publication date: April 13, 2017Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki ASO, Yoshihiko Imanaka
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Publication number: 20170104145Abstract: A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.Type: ApplicationFiled: October 11, 2016Publication date: April 13, 2017Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Takashi Yamazaki, Hiroyuki ASO, Yoshihiko Imanaka
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Publication number: 20160268492Abstract: A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.Type: ApplicationFiled: March 8, 2016Publication date: September 15, 2016Applicant: FUJITSU LIMITEDInventors: John David Baniecki, Hiroyuki ASO, Yasutoshi Kotaka, Yoshihiko Imanaka
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Patent number: 9266273Abstract: A thermoplastic resin film manufacturing method and manufacturing device are disclosed wherein an air volume sprayed by the auxiliary cooling device onto the surface of the film on the opposite side thereof to the cooling drum side thereof is set to be larger than the suction amount by an exhaust mechanism between nozzles, to avoid the suction of the air containing the high concentration of oligomer around the extrusion die into the auxiliary cooling device, thereby preventing precipitation and deposition of the oligomer onto spraying nozzles within the auxiliary cooling device and the suction surface of the exhaust mechanism between nozzles.Type: GrantFiled: October 4, 2010Date of Patent: February 23, 2016Assignee: Toray Industries, Inc.Inventors: Doseok Lee, Hiroyuki Inoue, Hiroyuki Aso
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Patent number: 8561321Abstract: An air injection nozzle has an air injection face with a number of air injection holes arrayed at an interval (Py) in first and second staggered rows. The first row and the second rows are positioned at an interval (Px). The air injection face and the sheet running face confront each other at a distance (L). The air injection holes in the air injection face have a diameter (D). The interval (Px), the interval (Py), the distance (L) and the diameter (D) satisfy Formula (1): 6?(L/D)/(Px/Py)?9, and Formula (2): 4?L/D?8. This air injection nozzle is employed as a resin film heat treating apparatus in a tenter oven to be used for manufacturing the resin film.Type: GrantFiled: March 26, 2012Date of Patent: October 22, 2013Assignee: Toray Industries, Inc.Inventors: Hiroyuki Inoue, Takanori Nishida, Hiroyuki Aso