Abstract: The purpose of the present invention is to provide: silica particles of which the maximum particle diameter can be minimized and which can achieve proper fluidability that cannot be achieved by the conventional techniques; and silica spherical particles which, when used as a filler for a heat-dissipating sheet, can achieve excellent heat conductivity and flexibility. Silica spherical particles characterized in that, when particles each having a size of 5 ?m or more and imaged by an optical measurement are observed, the particle diameter of each of the particles, which is determined from the image, satisfies the following requirements. Requirements: D99?29 ?m, and 10 ?m?Dmode<D99, and D99/Dmode?1.5, and Dmode?20 ?m.

Abstract: There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 ?m.

Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.

Abstract: The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.

Abstract: The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

Abstract: There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 ?m.

Abstract: A silicon wafer contains: a silicon substrate; a first epitaxial layer on the silicon wafer, wherein the absolute value of the difference between donor and acceptor concentrations is ?1×1018 atoms/cm3; a second epitaxial layer above the first epitaxial layer, whose conductivity type is the same as the first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentrations is ?5×1017 atoms/cm3; wherein, by doping a lattice constant adjusting material into the first epitaxial layer, the variation amount ((a1-aSi)/aSi) of the lattice constant of the first epitaxial layer (a1) relative to the lattice constant of the silicon single crystal (aSi) as well as the variation amount ((a2-aSi)/aSi) of the lattice constant of the second epitaxial layer (a2) relative to the lattice constant of the silicon single crystal (aSi) are controlled to less than the critical lattice mismatch.

Abstract: Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

Abstract: Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

Abstract: Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.