Patents by Inventor Hiroyuki Fuchigami
Hiroyuki Fuchigami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9871152Abstract: To provide a solar cell that reduces occurrence of a defect and has high photoelectric conversion efficiency. The solar cell includes a silicon substrate such as an n-type single-crystal silicon substrate single crystal with pyramid-shaped irregularities P formed thereon, and an amorphous or microcrystal semiconductor layer formed on the single-crystal silicon substrate. A flat part F is formed in a valley portion of the pyramid-shaped irregularities P provided on a surface of the single-crystal silicon substrate. With this configuration, a steep angle of 70° to 85° of a concave portion formed by a substantially (111) surface can be widened to between 115° and 135°. Accordingly, a change of atomic step morphology attributable to a rounded shape can be eliminated, thereby enabling to reduce epitaxial growth and defects in the amorphous or microcrystal semiconductor layer.Type: GrantFiled: October 15, 2012Date of Patent: January 16, 2018Assignee: Mitsubishi Electric CorporationInventors: Aya Nishiyama, Hiroyuki Fuchigami, Hidetada Tokioka
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Publication number: 20150068594Abstract: To provide a solar cell that reduces occurrence of a defect and has high photoelectric conversion efficiency. The solar cell includes a silicon substrate such as an n-type single-crystal silicon substrate single crystal with pyramid-shaped irregularities P formed thereon, and an amorphous or microcrystal semiconductor layer formed on the single-crystal silicon substrate. A flat part F is formed in a valley portion of the pyramid-shaped irregularities P provided on a surface of the single-crystal silicon substrate. With this configuration, a steep angle of 70° to 85° of a concave portion formed by a substantially (111) surface can be widened to between 115° and 135°. Accordingly, a change of atomic step morphology attributable to a rounded shape can be eliminated, thereby enabling to reduce epitaxial growth and defects in the amorphous or microcrystal semiconductor layer.Type: ApplicationFiled: October 15, 2012Publication date: March 12, 2015Applicant: Mitsubishi Electric CorporationInventors: Aya Nishiyama, Hiroyuki Fuchigami, Hidetada Tokioka
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Patent number: 8546682Abstract: A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts.Type: GrantFiled: December 22, 2011Date of Patent: October 1, 2013Assignee: Mitsubishi Electric CorporationInventors: Kyozo Kanamoto, Hirofumi Konishi, Hidetada Tokioka, Mikio Yamamuka, Hiroyuki Fuchigami
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Patent number: 8310246Abstract: A continuity testing apparatus includes open/short detection circuits provided for to-be-tested terminals, respectively and configured to determine the presence or absence of at least any one of an open-circuit failure and a short-circuit failure in to-be-tested terminals. Then, the continuity testing apparatus generates detected results of the open/short detection circuits based on the condition of continuity of the to-be-tested terminals having connections to the open/short detection circuits and the detected results from the open/short detection circuits in the preceding stages, and outputs the generated detected results to the open/short detection circuits in the succeeding stages. Further, the continuity testing apparatus determines the condition of continuity based on the output from the open/short detection circuit in the last stage.Type: GrantFiled: March 4, 2010Date of Patent: November 13, 2012Assignee: Renesas Electronics CorporationInventors: Hiroyuki Fuchigami, Shouichirou Satou
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Publication number: 20120160298Abstract: A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts.Type: ApplicationFiled: December 22, 2011Publication date: June 28, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kyozo KANAMOTO, Hirofumi KONISHI, Hidetada TOKIOKA, Mikio YAMAMUKA, Hiroyuki FUCHIGAMI
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Patent number: 8076844Abstract: An organic EL display device includes a glass substrate and a flattening film arranged above the glass substrate. A plurality of anodes are arranged on a surface of the flattening film. A plurality of organic EL layers are arranged on a surface of the anodes. The flattening film has irregularities formed in at least a partial surface in a region outside a region where the plurality of organic EL layers are arranged. According to such a structure, an organic EL display device in which remaining of moisture in an insulating film is suppressed can be provided.Type: GrantFiled: January 3, 2008Date of Patent: December 13, 2011Assignee: Canon Kabushiki KaishaInventors: Kouji Oda, Hiroyuki Fuchigami, Yusuke Yamagata, Katsumi Nakagawa, Junji Ohyama
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Publication number: 20100225331Abstract: A continuity testing apparatus includes open/short detection circuits provided for to-be-tested terminals, respectively and configured to determine the presence or absence of at least any one of an open-circuit failure and a short-circuit failure in to-be-tested terminals. Then, the continuity testing apparatus generates detected results of the open/short detection circuits based on the condition of continuity of the to-be-tested terminals having connections to the open/short detection circuits and the detected results from the open/short detection circuits in the preceding stages, and outputs the generated detected results to the open/short detection circuits in the succeeding stages. Further, the continuity testing apparatus determines the condition of continuity based on the output from the open/short detection circuit in the last stage.Type: ApplicationFiled: March 4, 2010Publication date: September 9, 2010Applicant: NEC ELECTRONICS CORPORATIONInventors: Hiroyuki Fuchigami, Shouichirou Satou
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Publication number: 20080164810Abstract: An organic EL display device includes a glass substrate and a flattening film arranged above the glass substrate. A plurality of anodes are arranged on a surface of the flattening film. A plurality of organic EL layers are arranged on a surface of the anodes. The flattening film has irregularities formed in at least a partial surface in a region outside a region where the plurality of organic EL layers are arranged. According to such a structure, an organic EL display device in which remaining of moisture in an insulating film is suppressed can be provided.Type: ApplicationFiled: January 3, 2008Publication date: July 10, 2008Applicants: MITSUBISHI ELECTRIC CORPORATION, CANON KABUSHIKI KAISHAInventors: Kouji ODA, Hiroyuki Fuchigami, Yusuke Yamagata, Katsumi Nakagawa, Junji Ohyama
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Publication number: 20080157660Abstract: A substrate for an organic EL display including an insulating layer, in which release of a substance derived from a material for the insulating layer by heating at a temperature equal to or lower than a temperature obtained by subtracting 20° C. from a decomposition temperature of the material for the insulating layer is detected by mass spectrometric detection at an S/N ratio smaller than 3/1.Type: ApplicationFiled: December 26, 2007Publication date: July 3, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Junji Ohyama, Tomonari Horikiri, Katsumi Nakagawa, Hiroyuki Fuchigami
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Publication number: 20060192481Abstract: An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.Type: ApplicationFiled: December 13, 2005Publication date: August 31, 2006Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Kensuke Nagayama, Nobuaki Ishiga, Kazunori Inoue, Toru Takeguchi, Hiroyuki Fuchigami
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Patent number: 7091659Abstract: An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.Type: GrantFiled: April 27, 2004Date of Patent: August 15, 2006Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Hiroyuki Fuchigami, Kazushi Yamayoshi, Tomoyuki Irizumi, Koji Oda
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Publication number: 20040256984Abstract: An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.Type: ApplicationFiled: April 27, 2004Publication date: December 23, 2004Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Hiroyuki Fuchigami, Kazushi Yamayoshi, Tomoyuki Irizumi, Koji Oda
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Patent number: 6392731Abstract: A liquid crystal display device with an In-panel switching system mode includes a conductive body for adjusting an electric field, disposed between elongated electrodes such that the conductive member is electrically isolated from the elongated electrodes.Type: GrantFiled: May 31, 2000Date of Patent: May 21, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Tetsuya Satake, Takahiro Nishioka, Kazuko Wakita, Tadashi Saito, Hiroyuki Fuchigami, Tetsuyuki Kurata
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Patent number: 6300608Abstract: There are provided an induction heating coil for carrying out high frequency induction heating (heating during movement) of a hot rolled steel or the like by surrounding the hot rolled steel or the like which is placed on a plurality of conveying rollers and conveyed, and an induction heating apparatus using this induction heating coil. In an induction heating coil 2 for induction heating a heated body (a thin slab 8 or the like) by surrounding it, a first coil portion 13 wound in a spiral form while transferring in one direction (the direction of the arrow mark &agr;) along a coil axis S and a second coil portion 14 which is connected to a terminal (turn point 18) of the first coil portion 13 and wound back while transferring in the other direction (the direction of the arrow mark &bgr;) along the coil axis S are combined so as to overlap in the non-contact state.Type: GrantFiled: October 12, 1999Date of Patent: October 9, 2001Assignees: Denki Kogyo Co., Ltd., Chugai Ro Co., Ltd.Inventors: Hideo Inoh, Suetaka Omura, Takashi Fujisawa, Hiroyuki Fuchigami
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Publication number: 20010001465Abstract: There are provided an induction heating coil for carrying out high frequency induction heating (heating during movement) of a hot rolled steel or the like by surrounding the hot rolled steel or the like which is placed on a plurality of conveying rollers and conveyed, and an induction heating apparatus using this induction heating coil. In an induction heating coil 2 for induction heating a heated body (a thin slab 8 or the like) by surrounding it, a first coil portion 13 wound in a spiral form while transferring in one direction (the direction of the arrow mark &agr;) along a coil axis S and a second coil portion 14 which is connected to a terminal (turn point 18) of the first coil portion 13 and wound back while transferring in the other direction (the direction of the arrow mark &bgr;) along the coil axis S are combined so as to overlap in the non-contact state.Type: ApplicationFiled: October 12, 1999Publication date: May 24, 2001Applicant: ALSTON & BIRD LLPInventors: HIDEO INOH, SUETAKA OMURA, TAKASHI FUJISAWA, HIROYUKI FUCHIGAMI
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Patent number: 6060338Abstract: A method of fabricating a field effect transistor including forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; forming a semiconducting film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.Type: GrantFiled: January 12, 1999Date of Patent: May 9, 2000Assignees: Mitsubishi Denki Kabushiki Kaisha, Sumitomo Chemical Company, LimitedInventors: Toshihiko Tanaka, Syuji Doi, Hiroshi Koezuka, Akira Tsumura, Hiroyuki Fuchigami
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Patent number: 6060333Abstract: A method of fabricating a liquid crystal display device including a field effect transistor includes forming a gate electrode on an electrically insulating substrate, the gate electrode being located in a transistor region of the substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode in the transistor region; forming a display electrode on the electrically insulating substrate in a display region of the substrate, adjacent the transistor region, the drain electrode being electrically connected to the display electrode; and forming, in the transistor region, a semiconductor film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes in the transistor region; arranging a transparent plate, including a transparent electrode, opposite and spaced from the .pi.Type: GrantFiled: January 12, 1999Date of Patent: May 9, 2000Assignees: Mitsubishi Denki Kabushiki Kaisha, Sumitomo Chemical Company, Ltd.Inventors: Toshihiko Tanaka, Syuji Doi, Hiroshi Koezuka, Akira Tsumura, Hiroyuki Fuchigami
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Patent number: 5892244Abstract: The present invention relates to a field effect transistor (FET element) in which a .pi.-conjugated polymer film serving as a semiconductor layer is manufactured by first forming a .pi.-conjugated polymer precursor film using a .pi.-conjugated precursor which is soluble in a solvent and then changing the precursor polymer film to the .pi.-conjugated polymer film. A liquid crystal display apparatus uses the FET element as an active drive element. A large number of the FET elements can be manufactured on a large area substrate at the same time at lost cost and operate stably. A large current flow between the source and drain can be significantly modulated by a voltage applied to the gate of the FET element.Type: GrantFiled: April 10, 1997Date of Patent: April 6, 1999Assignees: Mitsubishi Denki Kabushiki Kaisha, Sumitomo Chemical Company, LimitedInventors: Toshihiko Tanaka, Syuji Doi, Hiroshi Koezuka, Akira Tsumura, Hiroyuki Fuchigami
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Patent number: 5500537Abstract: A field effect transistor has a channel between a source electrode and a drain electrode made from an organic semiconductor. In one form of the invention, the channel is a mixture of at least two different organic compounds. In another form of the invention, the channel is a lamination of at least two films of different organic compounds. The channel can also be a .pi.-conjugated block copolymer of at least two different types of monomers.Type: GrantFiled: July 30, 1993Date of Patent: March 19, 1996Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Akira Tsumura, Hiroyuki Fuchigami, Hideharu Nobutoki, Hiroshi Koezuka