Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.

Abstract: A travel sickness estimation system includes an estimation unit and an output unit. The estimation unit is configured to perform estimation processing of estimating, based on person information indicating conditions of a person who is on board a moving vehicle, whether or not the person is in circumstances that would cause travel sickness for him or her. The output unit is configured to output a result of the estimation processing performed by the estimation unit.

Abstract: A semiconductor laser element includes: a substrate; a first semiconductor layer; a light emission layer; a second semiconductor layer; and a groove part formed at least at the substrate and the first semiconductor layer. The second semiconductor layer has a ridge part for guiding laser light generated in the light emission layer. A width of the ridge part cyclically changes in accordance with a position in a waveguiding direction of the ridge part. An angle between a side face of the ridge part and the waveguiding direction is larger than a limit angle defined by an effective refractive index on each of an inner side of the ridge part and an outer side of the ridge part. The groove part is disposed on the outer side of the side face at least where the width of ridge part is small.

Abstract: A semiconductor laser element includes: a substrate having a projection at an upper face thereof; a first semiconductor layer; a light emission layer; a second semiconductor layer; and a low refractive index part having a refractive index lower than that of the first semiconductor layer. The second semiconductor layer has a ridge part for guiding laser light generated in the light emission layer. An angle between a side face of the ridge part and the waveguiding direction is larger than a limit angle defined by an effective refractive index on each of an inner side of the ridge part and an outer side of the ridge part. The low refractive index part is disposed between an active layer of the light emission layer and the projection of the substrate, and on the outer side of the side face at least where the width of the ridge part is small.

Abstract: A semiconductor laser element is a semiconductor laser element that emits laser light, and the semiconductor laser element includes a substrate, a first semiconductor layer above the substrate, a light emitting layer above the first semiconductor layer, a second semiconductor layer above the light emitting layer, and a dielectric layer above the second semiconductor layer. The second semiconductor layer includes a waveguide that guides the laser light. A width of at least a portion of the waveguide is modulated with respect to a position in a direction of resonator length, the direction being a longitudinal direction of the waveguide. The waveguide includes a first waveguide and a second waveguide that is wider than the first waveguide. A difference between an effective index of refraction inside the waveguide and an effective index of refraction outside the waveguide is greater in the second waveguide than in the first waveguide.

Abstract: A semiconductor laser element includes a ridge, and includes: a p-type first clad layer; and a p-type second clad layer arranged on the p-type first clad layer, the p-type first clad layer has a superlattice structure of an AlxGa1-xN layer and an AlyGa1-yN layer (0?x?y?1), the p-type second clad layer includes AlzGa1-zN (0?z?y), the p-type first clad layer includes: a flat portion on which the p-type second clad layer is not arranged; and a protruding portion which protrudes upward from the flat portion and on which the p-type second clad layer is arranged, and the height of the protruding portion protruding from the flat portion is less than the thickness of the p-type first clad layer in the flat portion.

Abstract: The semiconductor laser element includes: a substrate; a first semiconductor layer disposed above a main surface of the substrate; an active layer that is disposed above the first semiconductor layer and generates light; and a second semiconductor layer) disposed above the active layer. In a top view of a front-side end portion of the semiconductor laser element from which the light is emitted, an end surface of the second semiconductor layer includes an inclined portion with respect to an end surface of the first semiconductor layer.

Abstract: A semiconductor laser element includes a light emission layer and a plurality of waveguides to arranged in one direction. A semiconductor laser device includes the semiconductor laser element and a first base disposed, via a first adhesion layer, on one face in the lamination direction of the semiconductor laser element. The thermal resistance of the first adhesion layer is, in the arrangement direction of the plurality of waveguides to lower on one end portion side than on the other end portion side.

Abstract: A semiconductor laser element includes: a first semiconductor layer of a first conductive type; an emission layer which is arranged above the first semiconductor layer; a second semiconductor layer of a second conductive type which is arranged above the emission layer and includes a waveguide part through which light generated at the emission layer is transmitted; a p-side electrode which is arranged above the waveguide part; a base which is arranged oppositely to the p-side electrode; a conductive member which is arranged between the p-side electrode and the base; and a void part which is arranged in an inner region of the conductive member and has higher thermal resistance than the conductive member.

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.

Abstract: A travel sickness estimation system includes an estimation unit and an output unit. The estimation unit is configured to perform estimation processing of estimating, based on person information indicating conditions of a person who is on board a moving vehicle, whether or not the person is in circumstances that would cause travel sickness for him or her. The output unit is configured to output a result of the estimation processing performed by the estimation unit.

Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.

Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.

Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.

Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0 ?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A nitride semiconductor light emitting device includes a nitride semiconductor light emitting element and a package in which the nitride semiconductor light emitting element is accommodated. The package includes a base table in which openings are formed, a cap defining an accommodation space for accommodating the nitride semiconductor light emitting element together with the base table, lead pins passing through the openings and electrically connected to the nitride semiconductor light emitting element, and insulating members embedded in the openings to insulate the base table from the lead pins. At least parts of the insulating members which are located on an accommodation space side are made of a first insulating material containing no Si—O bond.