Abstract: A surface emitting laser includes a first reflective layer, an active layer provided on the first reflective layer, and a second reflective layer provided on the active layer. The first reflective layer, the active layer, and the second reflective layer form a mesa, and the mesa has an electrically insulating region and an electrically conductive region. The electrically insulating region is positioned at a center portion of the mesa in a surface direction, and the electrically conductive region includes the first reflective layer, the active layer, and the second reflective layer and is positioned outside the electrically insulating region in such a manner as to surround the electrically insulating region.

Abstract: A surface-emitting laser includes a first reflector layer, an active layer provided on the first reflector layer, and a second reflector layer provided on the active layer. The second reflector layer includes a corner reflector that tapers in a direction opposite to the first reflector layer, and the corner reflector has a plan shape of a circle or a polygon with an even number of vertexes.

Abstract: An optical shutter array is constituted by a first electrode that transmits three colors of light, a modulating layer that transmits the three colors of light transmitted through the first electrode, formed by a material of which the refractive index changes by application of voltage; and a second electrode constituted by a plurality of linear electrodes arranged in each of a plurality of divided regions, into which pixel portions have been divided, that transmit the three colors of light transmitted through the modulating layer. The first electrode, the modulating layer, and the second electrode are layered and provided between a pair of partially light transmitting mirrors. A configuration is adopted, in which the three colors of light transmitted through the linear electrodes are sequentially transmitted through the partially light transmitting mirror by sequentially switching and applying voltages to the linear electrodes.

Abstract: The present invention provides an optical member which is disposed on the light emitting side of an organic light-emitting display device having at least a light reflective electrode and an organic EL layer, the optical member including: a light transmissive substrate, and a light transmissive layer which is formed on the light transmissive substrate and which has concave portions, wherein the optical member is disposed on the light emitting side of the organic light-emitting display device, the optical member enabling to from an optical resonator between the light reflective electrode in the organic light-emitting display device and surfaces of the concave portions opposite to the light reflective electrode, and wherein the optical resonator emits light of at least one color light selected from a red light, a green light and a blue light.

Abstract: A laser exposure which includes: a laser light source including a multi-transverse mode semiconductor laser; a far-field pattern forming optical system for forming a far-field pattern of multi-transverse mode laser light emitted from the laser light source; a condensing optical system for condensing the laser light emitted from the far-field pattern forming optical system and applying the condensed laser light to a substance to be exposed; and a coherency reducing element disposed in an optical path between the laser light source and the substance to be exposed, for reducing coherency of two wavefront components that are contained in high-order transverse mode light of each order emitted from the laser light source and propagate in substantially symmetrical directions with respect to the optical axis.

Abstract: In an optical signal transmission system which can perform high-speed optical transmission not lower than 1 Gbps, VCSEL has light-emission points. A core diameter of an optical fiber GI-POF is set to not lower than 200 ?m, and the light-emission points of VCSEL are arranged inside an outer periphery at an end face of GI-POF. A polymerization composition material constituting the core of GI-POF is made of a compound containing deuterated poly methacrylic ester. A wavelength of the light beam of VCSEL is set to the range of 770 nm to 810 nm.

Abstract: Excitation light is inputted to an optical element with uniformly dispersed inorganic fluorescent nanoparticles whose radius is controlled. Fluorescence is emitted from the inorganic fluorescent nanoparticles through photoexcitation and outputted from one end of the optical element. By controlling the radius of the inorganic fluorescent nanoparticles dispersed in the optical element, the wavelength range and spectral width of the light outputted from the optical element are controlled.

Abstract: A plastic optical fiber (11) has a core (12) and a clad (13). The clad (13) is composed of an outer clad (14) and an inner clad (15). The refractive index in the core (12) gradually increases as the distance from the center thereof decreases. The refractive index in the inner clad (15) is equal to the minimum value of the refractive index in the core (12), and the refractive index in the outer clad (14) is smaller than that in the inner clad (15). For the purpose of decreasing the transmission loss between the plastic optical fiber (11) and a light emission device or the light receiving device, the diameter d1 of the core (12) and the outer diameter d2 of the inner clad (15) satisfy the following conditions; 100(?m)?d1?700(?m) 200(?m)?d1?1000(?m) d1<d2.

Abstract: In a laser annealing process for transforming a noncrystalline semiconductor film into a laterally-crystallized film: irradiation of a region with laser light and a shift of the position of the region to be irradiated are repeated, where the shift is made so that each region to be irradiated contains a subregion of granular crystals produced by previous irradiation and a subregion of noncrystalline semiconductor material which has not yet been crystallized, and the shifted region is irradiated under such a condition that the granular crystals and the noncrystalline semiconductor material which are contained in the second region are transformed into lateral crystals without melting one or more regions of lateral crystals produced in the semiconductor film by previous irradiation.

Abstract: A plastic optical fiber (11) has a core (12) and a clad (13). The clad (13) is composed of an outer clad (14) and an inner clad (15). The refractive index in the core (12) gradually increases as the distance from the center thereof decreases. The refractive index in the inner clad (15) is equal to the minimum value of the refractive index in the core (12), and the refractive index in the outer clad (14) is smaller than that in the inner clad (15).

Abstract: A laser exposure apparatus is disclosed. The laser exposure apparatus includes: a laser light source including a multi-transverse mode semiconductor laser; a far-field pattern forming optical system for forming a far-field pattern of multi-transverse mode laser light emitted from the laser light source; a condensing optical system for condensing the laser light emitted from the far-field pattern forming optical system and applying the condensed laser light to a substance to be exposed; and a coherency reducing means disposed in an optical path between the laser light source and the substance to be exposed, for reducing coherency of two wavefront components that are contained in high-order transverse mode light of each order emitted from the laser light source and propagate in substantially symmetrical directions with respect to the optical axis.

Abstract: Excitation light is inputted to an optical element with uniformly dispersed inorganic fluorescent nanoparticles whose radius is controlled. Fluorescence is emitted from the inorganic fluorescent nanoparticles through photoexcitation and outputted from one end of the optical element. By controlling the radius of the inorganic fluorescent nanoparticles dispersed in the optical element, the wavelength range and spectral width of the light outputted from the optical element are controlled.

Abstract: A laser diode includes: a reflection layer, an active layer, and a corner reflector which has a shape approximately corresponding to a portion of a cone or pyramid, and is arranged above the active layer with vertex up so that the corner reflector and the reflection layer realize a resonator. An emission window is formed at a portion, containing the vertex, of the corner reflector, and has such dimensions that substantially only components of oscillated light in a fundamental transverse mode are emitted as a light beam which can propagate outside the laser diode. Instead of provision of the reflection layer, a reflection face may be formed at an end of semiconductor layers, and a corner reflector having an emission window with dimensions as above may be formed at the other end of the semiconductor layers.

Abstract: An optical signal transmitting device includes: a semiconductor laser diode that is disposed so that its periphery is covered by a laser package and which emits laser light in accordance with information to be transmitted; and a light limiting member that covers at least part of the periphery of the semiconductor laser diode and limits the light amount and divergence angle of the laser light emitted from the semiconductor laser diode. An opening is formed in a side wall of the light limiting member, and the laser light whose light amount and divergence angle have been limited by the light limiting member is guided to optical fiber connected to an optical signal device.

Abstract: In an optical signal transmission system which can perform high-speed optical transmission not lower than 1 Gbps, VCSEL has light-emission points. A core diameter of an optical fiber GI-POF is set to not lower than 200 ?m, and the light-emission points of VCSEL are arranged inside an outer periphery at an end face of GI-POF. A polymerization composition material constituting the core of GI-POF is made of a compound containing deuterated poly methacrylic ester. A wavelength of the light beam of VCSEL is set to the range of 770 nm to 810 nm.

Abstract: An optical recording method in which an effective recording sensitivity in the recording of image information on a photosensitive material is raised, whereby a productivity is enhanced owing to lowered energy (laser power) required for the recording or a heightened recording speed. An image is recorded by projecting a light beam onto the photosensitive material formed on a base material backing. The optical recording method includes the steps of: (a) successively outputting pulse light whose duty factor is at most 50%, from a light source; (b) modulating the pulse light output from the light source, in accordance with an image signal, and then projecting the modulated pulse light onto the photosensitive material; and (c) recording the image by causing the pulse light to scan the photosensitive material.

Abstract: An optical recording method in which an effective recording sensitivity in the recording of image information on a photosensitive material is raised, whereby a productivity is enhanced owing to lowered energy (laser power) required for the recording or a heightened recording speed. An image is recorded by projecting a light beam onto the photosensitive material formed on a base material backing. The optical recording method includes the steps of: (a) successively outputting pulse light whose duty factor is at most 50%, from a light source; (b) modulating the pulse light output from the light source, in accordance with an image signal, and then projecting the modulated pulse light onto the photosensitive material; and (c) recording the image by causing the pulse light to scan the photosensitive material.

Abstract: A laser beam having a high power and preferable quality is obtained by a laser using a laser medium having a wide active region or a large mode volume. The laser includes a laser source, first and second resonator mirrors as a laser resonator optical system, an array illuminator optical system which is placed within the resonator optical system and places, at even spacing in a plane perpendicular to an optical axis of the resonator, complex amplitude distributions including only a fundamental transverse mode in a uniform phase similar to a fundamental transverse mode component of a laser beam emitted from the laser beam source. A higher-order mode component is diffracted in an angle larger than its diffraction angle and eliminated outside the resonator.

Abstract: An optical beam deflector in which a crosssection of an incident optical (e.g., laser) beam is divided into a first plurality of portions (micro crosssections) by an array of first lenses, a plurality of phases of the optical beam in the first micro crosssections are respectively modified by an array of first optical phase modulators so that a desired phase distribution is realized over the crosssection of the optical beam, and thereafter the crosssection of the optical beam is further divided into a plurality of second micro crosssections, and a plurality of phases of the optical beam in the second micro crosssections are respectively modified by an array of second optical phase modulators. An array of second lenses is provided corresponding to the second optical phase modulators to collect a plurality of portions of the optical beam output from the second optical phase modulators.

Abstract: A laser system includes a light amplifier medium provided with an optical waveguide layer which controls the transverse mode to a fundamental transverse mode in one direction, a first resonator mirror optical system which is opposed to a first light outlet end face of the light amplifier medium and reflects a laser beam radiated from the first light outlet end face to impinge upon the first light outlet end face, and a second resonator mirror optical system which is opposed to a second light outlet end face of the light amplifier medium and reflects a laser beam radiated from the second light outlet end face to impinge upon the second light outlet end face.