Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the insulating fine particle layer, wherein the insulating fine particles are monodisperse fine particles, and when voltage is applied between the first electrode and the second electrode, electrons are discharged from the first electrode into the insulating fine particle layer and accelerated through the insulating fine particle layer to be emitted from the second electrode.

Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode; and comprising first insulating fine particles and second insulating fine particles larger than the first insulating fine particles, a surface of the insulating fine particle layer having a projection formed from the second insulating fine particles, and a second electrode formed on the insulating fine particle layer, wherein when a voltage is applied between the first electrode and the second electrode, electrons provided from the first electrode are accelerated in the insulating fine particle layer to be emitted from the second electrode via the projection.

Abstract: An optical scanning device includes a housing, a laser light source outputting a laser light, a polygon mirror arranged in an arrangement space and deflecting the laser light to scan a predetermined object with the laser light while rotating, a polygon motor rotating the polygon mirror, a control board arranged in the arrangement space and controlling the polygon motor, and a flow-control member arranged in the arrangement space and guiding an airflow generated by a rotation of the polygon mirror to an outside of the arrangement space to circulate the airflow within the housing.

Abstract: An electron emitting element of the present invention includes: an electrode substrate; a thin-film electrode; and an electron acceleration layer sandwiched between the electrode substrate and the thin-film electrode, the electron acceleration layer including (1) conductive fine particles, (ii) insulating fine particles having an average particle diameter greater than an average particle diameter of the conductive fine particles, and (iii) a crystalline electron transport agent. The crystalline electron transport agent is crystallized in the acceleration layer.

Abstract: An optical semiconductor sealing resin composition includes a rubber-particle-dispersed epoxy resin (A) containing an alicyclic epoxy resin and, dispersed therein, rubber particles, in which the rubber particles comprise a polymer including one or more (meth)acrylic esters as essential monomeric components and have a hydroxyl group and/or a carboxyl group in a surface layer thereof as a functional group capable of reacting with the alicyclic epoxy resin, the rubber particles have an average particle diameter of 10 nm to 500 nm and a maximum particle diameter of 50 nm to 1000 nm, and the difference in refractive index between the rubber particles and a cured article obtained from the optical semiconductor sealing resin composition is within ±0.02. The optical semiconductor sealing resin composition can give a cured article which exhibits excellent cracking resistance while maintaining satisfactory thermal stability and high transparency.

Abstract: A liquid thermosetting epoxy resin composition contains a base resin in combination with a curing agent and a curing accelerator or with a curing catalyst. The base resin includes a cycloaliphatic epoxy compound having at least one alicyclic skeleton and two or more epoxy groups per molecule, and a polyol oligomer having two or more terminal hydroxyl groups. An optical semiconductor device includes an optical semiconductor element sealed by using the liquid thermosetting epoxy resin composition. The composition yields a cured resinous product which is free from curing failure, is optically homogenous, has a low elastic modulus in bending, a high bending strength, a high glass transition temperature, a high optical transparency and is useful for optical semiconductors.

Abstract: An electron emitting element includes an electrode substrate, a thin-film electrode, and an electron acceleration layer provided between them. The electron acceleration layer includes a fine particle layer containing insulating fine particles, which is provided on a side of the electrode substrate, and a deposition of conductive fine particles, which is provided on a surface of the fine particle layer. In the electron acceleration layer, a conductive path is formed in advance, and the deposition has a physical recess which is an exit of the conductive path and which serves as an electron emitting section. Electrons are emitted via the electron emitting section. With the arrangement, it is possible to realize an electron emitting element which prevents that an electrode on an electron emission side gradually wears off along with electron emission and which can maintain an electron emission characteristic for a long period.

Abstract: A heat exchanger (1) includes: a heat sink (3) which is in contact with a heating element (2); and an electron emitting element (4) which is provided so as to be separated from the heat sink (3) by a space and which provides electrons to the heat sink (3) via air in the space. The electron emitting element (4) includes: an electrode substrate (7); a thin-film electrode (9); a power supply (10) which applies a voltage between the electrode substrate (7) and the thin-film electrode (8); and an electron acceleration layer (8) which accelerates the electrons inside itself in response to the voltage applied by the power supply (10) so that the electrons are emitted from the thin-film electrode (9). The electron acceleration layer (8) is made at least partially of an insulating material. As a result, the heat exchanger (1) has a heat exchange capability which can be maintained and improved independently of a structure in which electric field concentration tends to occur.

Abstract: The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=?·R?0.

Abstract: A light emitting element of the present invention includes an electrode substrate; a thin-film electrode; and an electron acceleration layer sandwiched between the electrode substrate and the thin-film electrode. In the electron acceleration layer, as a result of a voltage applied between the electrode substrate and the thin-film electrode, electrons are accelerated so as to be turned into hot electrons. The hot electrons excite surfaces of the silicon fine particles contained in the electron acceleration layer so that the surfaces of the silicon fine particles emit light. Such a light emitting element of the present invention is a novel light emitting element, which has not been achieved by the conventional techniques. That is, the light emitting element of the present invention is able to (i) be produced by using a silicon material, which is available at low price, through a simple production method, and (ii) efficiently emit light.

Abstract: According to an electron emitting element of the present invention, an electron acceleration layer sandwiched between an electrode substrate and a thin-film electrode contains (i) insulating fine particles and (ii) at least one of (a) conductive fine particles having an average particle diameter smaller than an average particle diameter of the insulating fine particles and (b) a basic dispersant. The electron acceleration layer has a surface roughness of 0.2 ?m or less in centerline average roughness (Ra). The thin-film electrode has a film thickness of 100 nm or less. As such, according to the electron emitting element of the present invention, it is possible to reduce the thickness of the thin-film electrode to an appropriate thickness. Accordingly, it is possible to increase electron emission.

Abstract: An electron emitting element of the present invention includes an electron acceleration layer that includes insulating fine particles but does not include conductive fine particles, the electron acceleration layer being provided between an electrode substrate and a thin-film electrode. This electron emitting element accelerates electrons in the electron acceleration layer and emits the electrons from the thin-film electrode, when a voltage is applied between the electrode substrate and the thin-film electrode. Accordingly, the electron emitting element of the present invention makes dielectric breakdown hard to occur. Further, this electron emitting element is produced easily at low cost and capable of emitting a steady and sufficient amount of electrons.

Abstract: An electron emitting element (1) includes a substrate (2), an upper electrode (3), and a fine particle layer (4) sandwiched between the substrate (2) and the upper electrode (3). The fine particle layer (4) includes metal fine particles (6) with high resistance to oxidation, and insulating fine particles (5) larger in size than the metal fine particles (6). The electron emitting element (1) can steadily emit electrons not only in vacuum but also in the atmosphere. Further, the electron emitting element (1) can work without electric discharge so that harmful substances such as ozone, NOx, or the like are scarcely generated. Accordingly, degradation of the electron emitting element (1) due to oxidation does not occur. Therefore, the electron emitting element (1) has a long life and can steadily work continuously for a long period of time even in the atmosphere.

Abstract: A liquid thermosetting epoxy resin composition contains a base resin in combination with a curing agent and a curing accelerator or with a curing catalyst. The base resin includes a cycloaliphatic epoxy compound having at least one alicyclic skeleton and two or more epoxy groups per molecule, and a polyol oligomer having two or more terminal hydroxyl groups. An optical semiconductor device includes an optical semiconductor element sealed by using the liquid thermosetting epoxy resin composition. The composition yields a cured resinous product which is free from curing failure, is optically homogenous, has a low elastic modulus in bending, a high bending strength, a high glass transition temperature, a high optical transparency and is useful for optical semiconductors.

Abstract: An electron emitting element of the present invention includes an electron acceleration layer between an electrode substrate and a thin-film electrode. The electron acceleration layer includes a binder component in which insulating fine particles and conductive fine particles are dispersed. Therefore, the electron emitting element of the present invention is capable of preventing degradation of the electron acceleration layer and can efficiently and steadily emit electrons not only in vacuum but also under the atmospheric pressure. Further, the electron emitting element of the present invention can be formed so as to have an improved mechanical strength.

Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9?y?75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.

Abstract: A developer of the present invention includes a toner and a carrier. The toner contains a charge control agent, and the carrier has on its surface a coating layer to which a charge control agent and electrically conductive particles are added. All of constituent elements of one of the charge control agent of the toner and the charge control agent of the carrier are contained in constituent elements of the other one of the charge control agents. With the configuration, the developer of the present invention is capable of stably maintaining a toner charge amount and outputting high-quality images for long periods.

Abstract: Regarding a magnetic carrier of the present invention, a surface of a magnetic core material is coated with a coating layer containing electrically conductive particles and a charge control agent composed of same components as components of a charge control agent contained in a electrophotographic toner. Further, the magnetic carrier exhibits an electric resistance value of 8.22×107 ?cm to 1.12×1010 ?cm in an electric field of 4×103 V/cm. This allows the magnetic carrier to stay capable of charging the electrophotographic toner even over a long period of time.

Abstract: A device for transferring toner along a flow path extending sequentially through an upstream stirring chamber(s) and a downstream stirring chamber(s). Toner transfer control apparatus controls toner transfer into the flow path, and a transfer of a developer including toner and a carrier between and from the upstream stirring chamber(s) to and between the downstream stirring chamber(s) to the latent image carrier whereby toner density along the flow path is controlled such that (i) a weight percentage of toner relative to developer in the upstream stirring chamber(s) is equal to or less than a first threshold value governing a time required to uniformly charge the toner; and (ii) the weight percentage of the toner to developer in the downstream stirring chamber(s) is greater than the first threshold value and equal to or less than a second threshold value necessary for the avoidance of uncharged toner.

Abstract: The resin coated carrier is used with a toner in which an external additive having an average primary particle size of 50 nm or more is added to a toner particle, and has a carrier core and a resin coating layer on the surface of the carrier core. In the resin coated carrier, the following expression (1) is satisfied: 0.5??log {(A/C)/(B/C)}?2.5 ??(1) wherein A represents a volume resistance value (Q/cm) of the resin coated carrier in an electric field of 1000 V/cm that is obtained by conducting a stirring test, B represents a volume resistance value (?/cm) of the resin coated carrier in an electric field of 1000 V/cm before the stirring test, and C represents a volume resistance value (?/cm) of the carrier core in an electric field of 1000 V/cm.