Abstract: An array antenna apparatus in which an SN ratio is improved. Antenna elements having transmission modules, respectively, are arranged in plurality, wherein the plurality of transmission modules respectively have transmission signal generators that each output a transmission intermediate frequency signal, local oscillation signal generators that each output a local oscillation signal, and transmission mixers that each mix the transmission intermediate frequency signal and the local oscillation signal with each other, thereby to carry out frequency conversion to a transmission high frequency signal. A reference signal source inputs a reference signal to the transmission signal generators and the local oscillation signal generators. The transmission intermediate frequency signal and the local oscillation signal are synchronized with each other by the reference signal.

Abstract: A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1, and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7. The driver-stage amplifier 3 is fabricated on a silicon substrate 11, while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.

Abstract: A transmission module including a power supply voltage control unit that sets a power supply voltage to the high frequency amplifier in a variable manner, and a control circuit that controls an amplitude control unit, a phase control unit and the power supply voltage control unit. The control circuit and the power supply voltage control unit control the power supply voltage in accordance with an output power of the high frequency amplifier. The transmission module can carry out not only phase control but also amplitude control in a continuous manner, while suppressing amplitude and phase variation, and a high frequency amplifier in the transmission module is made highly efficient. In addition, a large directional gain, a low side lobe level and a low power consumption are achieved, as a phased array antenna apparatus using a transmission module.

Abstract: A reception circuit is provided which can detect the beginning of data regardless of a preamble or a unique word contained or not in a received signal and regardless of coding systems for received signals. The reception circuit includes a correlation operation portion that performs a correlation operation to generate a correlation signal while sliding one symbol of reference signal in relation to a received signal. The reference signal goes to a high level during a first half symbol period and goes to a low level during a second half symbol period. The reception circuit further includes: a delay portion that outputs a delay signal by delaying the received signal for a half symbol period in relation to the received signal; and a data beginning timing detection portion that detects a beginning peak timing for the correlation signal as a beginning timing of data contained in the delay signal.

Abstract: A transmission module including a power supply voltage control unit that sets a power supply voltage to the high frequency amplifier in a variable manner, and a control circuit that controls an amplitude control unit, a phase control unit and the power supply voltage control unit. The control circuit and the power supply voltage control unit control the power supply voltage in accordance with an output power of the high frequency amplifier. The transmission module can carry out not only phase control but also amplitude control in a continuous manner, while suppressing amplitude and phase variation, and a high frequency amplifier in the transmission module is made highly efficient. In addition, a large directional gain, a low side lobe level and a low power consumption are achieved, as a phased array antenna apparatus using a transmission module.

Abstract: An array antenna apparatus in which an SN ratio is improved. Antenna elements having transmission modules, respectively, are arranged in plurality, wherein the plurality of transmission modules respectively have transmission signal generators that each output a transmission intermediate frequency signal, local oscillation signal generators that each output a local oscillation signal, and transmission mixers that each mix the transmission intermediate frequency signal and the local oscillation signal with each other, thereby to carry out frequency conversion to a transmission high frequency signal. A reference signal source inputs a reference signal to the transmission signal generators and the local oscillation signal generators. The transmission intermediate frequency signal and the local oscillation signal are synchronized with each other by the reference signal.

Abstract: A reception circuit is provided which can detect the beginning of data regardless of a preamble or a unique word contained or not in a received signal and regardless of coding systems for received signals. The reception circuit includes a correlation operation portion that performs a correlation operation to generate a correlation signal while sliding one symbol of reference signal in relation to a received signal. The reference signal goes to a high level during a first half symbol period and goes to a low level during a second half symbol period. The reception circuit further includes: a delay portion that outputs a delay signal by delaying the reference signal for a half symbol period in relation to the received signal; and a data beginning timing detection portion that detects a beginning peak timing for the correlation signal as a beginning timing of data contained in the delay signal.

Abstract: A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair.

Abstract: A mixer circuit mixes a target signal with a local oscillation signal to perform frequency conversion of the target signal. Since the mixer circuit uses a pseudo-sine wave as the local oscillation signal, it can carry out stable operation regardless of variations in the amplitude of the local oscillation signal.

Abstract: The present invention relates to a semiconductor device and, more particularly, has for its object to provide a technique for improving the performance of a semiconductor device having a ground terminal and a plurality of signal terminals arranged around the ground terminal. To attain the object, the present invention features isolation between a ground terminal (5, 35) connected to a functional block (11) and a ground terminal (6, 36) connected to a functional block (12). Thus, a ground potential applied to one of the functional blocks through the corresponding ground terminal is prevented from varying depending on the magnitude of a current flowing through the other functional block. This improves the performance of each functional block to improve the performance of the semiconductor device.

Abstract: A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a plurality of transistors 12-1 to 12-N at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to each transistors 12-1 to 12-N according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.

Abstract: A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair.

Abstract: A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.

Abstract: A mixer circuit includes a local frequency multiplication unit including a pair of transistors having bases receiving local oscillation waves inverted in phase. A reference transistor is differentially connected with the pair of transistors. The pair of transistors and the reference transistor have their emitters connected to a collector of a modulated wave input transistor having a base receiving a modulated wave signal and an emitter connected to a constant current source, and have their collectors connected to a load. The commonly connected collectors of the pair of transistors and the collector of the reference transistor output modulation signals inverted in phase. The sum of currents flowing through the pair of transistors and the reference transistor equals the constant current of the constant current source flowing through the modulated wave input transistor, and the mixer circuit has a gain.

Abstract: Between resistors 13, 14 and an NPN bipolar transistor 12 are interposed PNP bipolar transistors 21, 22 forming a current mirror 20 that uses a collector current of the NPN bipolar transistor 12 as a reference current, and determines a collector current of an NPN bipolar transistor 11. This makes possible to design a size ratio A of the PNP bipolar transistors 21, 22 so as to approximate a voltage drop &Dgr;Vb to a value close to zero, and to suppress the voltage drop &Dgr;Vb of the base voltage Vb accordingly to achieve a high power output and high efficiency when a high frequency input signal Pin increases and generates a base rectified current.

Abstract: A frequency components signal LO of a local oscillation wave is input to the base of a transistor (1) configuring a local frequency multiplication unit (10) and a signal (↓LO) opposite in phase to the local oscillation wave is input to the base of a transistor (2). The transistors (1, 2) have their collectors connected together and their emitters connected together, and each collector outputs a modulation signal. A reference transistor (3) is differentially connected to the transistors (1, 2). A load (6) is connected to the collector of each transistor (1-3) serving as an output of differential connection. Each differentially connected transistor (1-3) has its emitter with a collector connected thereto. A transistor (4) has its base receiving a modulated wave signal, and its emitter connected to a constant current source (5). A mixer circuit is thus configured.

Abstract: A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a transistor 12 at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to the transistor 12 according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.

Abstract: In a differential pair control type variable gain amplifier, amount of driving current of a current source (30; 30b-30n) is adjusted in accordance with the gain thereof. Specifically, in accordance with a control voltage (VCR) generated by a variable voltage source (25) determining the gain of a differential stage (20, 21) generating an output signal in accordance with an input signal, the amount of driving current of a current source transistor (Q2) of the differential stage is adjusted to be smaller as the gain becomes lower. Only the current in accordance with the gain is consumed, and the current consumption is reduced without causing signal distortion.

Abstract: A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a plurality of transistors 12-1 to 12-N at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to each transistors 12-1 to 12-N according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.

Abstract: A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.