Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated. The development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages. The development of the exposed resist coating is carried out by using a developing apparatus which comprises at least one set of developer-supplying system and rinsing solution-supplying system, and a conveyor means for guiding the article carrying the resist coating.

Abstract: In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated. The development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages. The development of the exposed resist coating is carried out by using a developing apparatus which comprises at least one set of developer-supplying system and rinsing solution-supplying system, and a conveyor means for guiding the article carrying the resist coating.

Abstract: A subject pattern and a lower layer pattern are divided into small regions of a constant dimension using identical mesh of division. Considering of the spreading of charged particle beam due to backward scattering, the small region is set to be, for example, a few .mu.m square. An irradiation energy on each small region is determined by taking backward scattering from lower level pattern into account. Calculation is simplified because a pattern is represented by a pattern areal density. A region with a lower level pattern and a region without a lower level pattern can be exposured by charged particle beam with a comparable accuracy.